IRF640NSPBF-VB

IRF640NSPBF www.VBsemi.com N-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.048 at VGS = 10 V 40 0.060 at VGS = 6.5 V 35 • • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package PWM Optimized for Fast Switching Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-263 • Isolated DC/DC Converters - Primary-Side Switch D G D S G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) ID TC = 125 °C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy TC = 25 °C Maximum Power Dissipationa 80 IAR 20 PD TA = 25 °Cc Operating Junction and Storage Temperature Range V 40 25 IDM EAR L = 0.1 mH Unit 16.2 200b 4.5 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 1 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount (TO-263) Junction-to-Case (Drain) c °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). 服务热线：400-655-8788 1 IRF640NSPBF www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min . VDS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 1 VDS = 160 V, VGS = 0 V, TJ = 125 °C 50 VDS = 160 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 15 V, VGS = 10 V RDS(on) Drain-Source on State Resistance a Forward Transconductance ± 100 VDS = 160 V, VGS = 0 V ID(on) Drain-Source On-State Resistancea 4 60 0.048 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.150 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.180 VDS = 15 V, ID = 30 A nA µA A VGS = 10 V, ID = 20 A VGS= 6.5 V, I D = 15 A gfs V Ω 0.060 15 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c 2820 VGS = 0 V, VDS = 25 V, f = 1 MHz 120 35 Gate-Source Charge Qgs Gate-Drain Chargec Qgd 14 RG 2 Gate Resistance Turn-On Delay Time c Rise Timec Turn-Off Delay Timec Fall Timec VDS = 100 V, VGS = 10 V, ID = 20 A td(on) tr td(off) pF 300 VDD = 100 V, RL = 5 Ω ID ≅ 20 A, VGEN = 10 V, RG = 2.5 Ω tf nC 11 Ω 15 25 35 55 40 60 30 45 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 40 Pulsed Current ISM 60 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 20 A, VGS = 0 V trr IRM(REC) Qrr IF = 50 A, dI/dt = 100 A/µs A 1 1.5 V 115 170 ns 7.5 12 A 0.43 1.02 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 服务热线：400-655-8788 IRF640NSPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C unless noted) 60 60 VGS = 10 thru 7 V 6V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 5V 40 30 20 TC = 125 °C 10 10 25 °C - 55 °C 3 V, 4 V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 80 0.16 60 R DS(on) - On-Resistance () g fs - Transconductance (S) TC = - 55 °C 25 °C 125 °C 40 20 0 0.12 VGS = 6 V 0.08 VGS = 10 V 0.04 0.00 0 10 20 30 40 50 60 0 10 20 ID - Drain Current (A) 40 50 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 4200 V GS - Gate-to-Source Voltage (V) 3500 Ciss C - Capacitance (pF) 30 2800 2100 1400 Crss 700 Coss VDS = 100 V ID = 20 A 16 12 8 4 0 0 0 40 80 120 160 200 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 50 60 服务热线：400-655-8788 3 IRF640NSPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C unless noted) 100 VGS = 10 V ID = 20 A 2.5 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 3.0 2.0 1.5 1.0 TJ = 150 °C 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 260 100 240 IAV (A) at TA = 25 °C V DS (V) I Dav (a) TJ = 25 °C 10 10 1 ID = 1.0 mA 220 200 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time 4 1 180 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 IRF640NSPBF www.VBsemi.com THERMAL RATINGS 30 100 Limited by R DS(on) * I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 100 µs 10 1 ms 10 ms 1 TC = 25 °C Single Pulse 5 0 0 25 50 75 100 125 150 0.1 0.1 175 10 µs TC - Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature 100 ms, DC 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 IRF640NSPBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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