AOD4185

HUAXUANYANG AOD4185 HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET Description The AOD4185 uses advanced trench technology to provide excellent RDS(ON), low gate charge and D S operation with gate voltages as low as 4.5V. This G device is suitable for use as a TO252-2L Battery protection or in other Switching application. General Features D VDS = -40V I D =-40A G RDS(ON) < 19 mΩ @ VGS=10V S Application P-Channel MOSFET Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AOD4185 TO252-2L 40P04 Qty(PCS) XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 -40 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 -22 A IDM Pulsed Drain Current2 -140 A PD@TC=25℃ Total Power Dissipation4 40.3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 66 ℃/W RθJC Thermal Resistance Junction-Case1 3.1 ℃/W Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HUAXUANYANG AOD4185 HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ = 25°C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage Gate-body Leakage current Zero Gate Voltage Drain Current TJ=25℃ TJ=100℃ V(BR)DSS VGS = 0V, ID = -250µA -40 - - V lGSS VDS = 0V, VGS = ±20V - - ±100 nA IDSS VDS = -40V, VGS = 0V - - -1 - - -100 -1.0 -1.5 -2.2 VGS = -10V, ID = -20A - 13.5 19 VGS = -4.5V, ID = -15A - 19.5 25 VDS = -10V, ID = -20A - 44 - - 2525 - - 190 - - 172 - - 10 - - 35 - - 5.5 - Gate-Threshold Voltage VGS(th) Drain-Source On-Resistance4 RDS(on) gfs Forward Transconductance4 VDS = VGS, ID = -250µA μA V mΩ S Dynamic Characteristics5 Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg VDS = -20V, VGS =0V, f =1MHz f =1MHz pF Ω Switching Characteristics5 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 8 - Turn-On Delay Time td(on) - 14.5 - - 20.2 - - 32 - - 10 - - - -1.2 V - - -40 A tr Rise Time td(off) Turn-Off Delay Time VGS = -10V,VDS = -20V, ID= -20A VGS = -10V, VDD = -20V, RG = 3Ω, ID= -20A tf Fall Time nC ns Drain-Source Body Diode Characteristics VSD Diode Forward Voltage4 Continuous Source Current TC=25°C IS = -20A, VGS = 0V IS - Note : 1. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. 2. The EAS data shows Max. rating . The test condition is VDD= -25V, VGS= -10V, L= 0.1mH, IAS= -34A. 3. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the user's specific board design. 4. The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%. 5. This value is guaranteed by design hence it is not included in the production test. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HUAXUANYANG AOD4185 HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET Typical Characteristics 40 40 VDS= -5V VGS = -10V Drain current -ID (A) Drain current -ID (A) VGS = -4.5V 30 VGS = -3.5V VGS = -3V 20 10 VGS = -2.5V 0 0 1 2 3 4 30 20 10 0 5 Drain−source voltage -VDS (V) 1 0 Figure 1. Output Characteristics 2 3 4 Gate−source voltage -VGS (V) Figure 2. Transfer Characteristics On-Resistance RDS (on) (mΩ) Source current -IS (A) 100 10 1 0.1 0.2 0.4 0.6 0.8 1.0 80 60 40 20 0 1.2 ID= -20A Source−drain voltage -VSD (V) 3 0 Figure 3. Forward Characteristics of Reverse 12 15 2.5 2.0 30 Normalized RDS (on) On-Resistance RDS (on) (mΩ) 9 Figure 4. RDS(ON) vs. VGS 40 VGS = -4.5V 20 VGS = -10V 10 0 6 Gate−source voltage -VGS (V) 1.5 1.0 0.5 0 10 20 Drain current -ID (A) Figure 5. RDS(ON) vs. ID Shenzhen HuaXuanYang Electronics CO.,LTD 30 0.0 -50 -25 0 25 50 75 Temperature Tj(°C) 100 125 150 Figure 6. Normalized RDS(on) vs. Temperature www.hxymos.com HUAXUANYANG AOD4185 HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET 100000 Capacitance（pF） 10000 Ciss 1000 Coss 100 Crss 10 1 F=1.0MHz 10 0 20 30 Drain-source voltage -VDS（V） 40 Figure 8. Gate Charge Characteristics 50 1000 40 100 Drain current -ID (A) Power Dissipation PD(W) Figure 7. Capacitance Characteristics 30 20 10 0 25 50 75 100 Case Temperature TC (°C) 125 100μs 10 Limited by RDS(on) 1 150 1ms DC 10ms Single Pulse TC=25℃ 0.1 0.01 0 10μs TJ=150℃ 0.1 1 10 100 Drain−source voltage -VDS (V) Figure 9. Power Dissipation Figure10. Safe Operating Area Normalized RθJC ℃/W) 10 1 Duty = 1.0 Duty = 0.5 0.1 Duty = 0.2 Duty = 0.1 Duty = 0.05 0.01 Duty = 0.02 Duty = 0.01 0.001 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 t, Pulse Width(S) Figure 11. Normalized Maximum Transient Thermal Impedance Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HUAXUANYANG AOD4185 HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET Test Circuit VGS RL Qg VDS VGS Qgs Qgd DUT IG=const Figure A. Gate Charge Test Circuit & Waveforms RL VDS RG VDD VGS DUT VGS Figure B. Switching Test Circuit & Waveforms L VDS ID RG VDD DUT VGS tp Figure C. Unclamped Inductive Switching Circuit & Waveforms Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HUAXUANYANG AOD4185 HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET TO252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HUAXUANYANG AOD4185 HXY ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein in such applications. ■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein. ■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA XUAN YANG ELECTRONICS CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the HUA XUAN YANG ELECTRONICS product that you intend to use. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com