SK35P10

SK35P10 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor 100V P-Channel MOSFET General Description The SK35P10P uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Product Summary TO-252 BVDSS -100 V RDS(ON) @VGS=-10V 50(Max.) mΩ RDS(ON) @VGS=-4.5V 55(Max.) mΩ ID -35 A Features Applications ● Improved dv/dt capability ● Net Working ● Low Input Capacitance ● Load Switch ● 100% EAS Guaranteed ● LED Application ● Green Device Available ● Quick Charger Graphic Symbol Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Unit VDSS -100 V VGSS ±20V V Drain-Source Voltage Gate-Source Voltage TC=25℃ NOTE 1 Drain Current-Continuous TC=100℃ Drain Current-Pulsed NOTE 2 Single Pulse Avalanche Current Single Pulse Avalanche Energy NOTE 3 Maximum Power Dissipation @ TC=25℃ NOTE 4 Storage Temperature Range Operating Junction Temperature Range Parameter NOTE 1 Maximum Junction-to-Ambient Maximum Junction-to-Case NOTE 1 REV.08 -35 ID NOTE 1 A -23 IDM -100 A IAS 28 A EAS 392 mJ PD 104 W TSTG -50 to 150°C °C TJ -50 to 150°C °C Symbol Conditions Min. Typ Max Unit RθJA RθJC Steady State Steady State - - 62 1.2 °C/W °C/W 1 of 6 SK35P10 Electrical Characteristics (TA=25°C unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit -100 - - V - - -1 uA - - ±100 nA -1.2 -1.8 -2.5 V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V , IDS=-250uA Drain-Source Leakage Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS IGSS VDS=-100V, VGS=0V, TJ=25°C VGS=±20V , VDS=0V Gate Threshold Voltage VGS(TH) VGS=VDS, IDS=-250uA Drain-Source On-Resistance RDS(ON) Forward Transconductance DYNAMIC CHARACTERISTICS gfs Input Capacitance Output Capacitance Ciss Coss Reverse Transfer Capacitance Crss VGS=-10V , IDS=-10A - 44 50 VGS=-4.5V , IDS=-8A - 48 55 VDS=-10V , ID=-10A - 32 - S - 6500 225 - pF - 130 - VDS=-20V, VGS=0V, f=1MHz mΩ SWITCHING CHARACTERISTICS Turn-On Delay Time Td(on) - 21 - Rise Time tr - 32 - Turn-Off Delay Time Td(off) - 125 - VDS=-50V, ID=-14A, RGEM=3.3Ω, VGS=-10V ns Fall Time tf - 64.2 - Total Gate Charge Qg - 90 - - 18.2 - - 14.5 - - - -1.2 V Gate to Source Gate Charge Qgs Gate to Drain ”Miller” Charge Qgd VDS=-80V, IDS=-14A, VGS=-10V nC SWITCHING CHARACTERISTICS Drain-Source Diode Forward Voltage 2 VSD Continuous Source Current NOTE1, 5 IS Pulsed Source Current NOTE1, 5 ISM VGS=0V, IS=-1A, TJ=25°C VG=VD=0V , Force Current - - -35 A - - -90 A Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is VDD=-25V, VGS=-10V, L=1mH, IAS=-28A 4. The power dissipation is limited by 150℃junction temperature 5. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation REV.08 2 of 6 SK35P10 Typical Operating Characteristics REV.08 3 of 6 SK35P10 Typical Operating Characteristics (Cont.) REV.08 4 of 6 SK35P10 Soldering Methods for SK Product 1. Storage environment: Temperature=10°C to35°C Humidity=65%±15% 2. Reflow soldering of surface-mount devices REV.08 5 of 6 SK35P10 PACKAGE DIMENSION TO-252-2 Symbol A A1 b b2 b3 c c1 D D1 E E1 e L L1 L2 REV.08 Millimeters Min. 2.184 0.890 0.635 0.910 4.953 0.457 0.457 5.334 5.207 6.350 4.320 Inches Max. 2.338 1.143 0.890 1.143 5.460 0.610 0.890 6.223 6.730 Min. 0.086 0.035 0.025 0.035 0.195 0.018 0.018 0.210 0.205 0.250 0.170 2.29 BSC 3.700 0.850 0.890 Max. 0.094 0.045 0.035 0.045 0.215 0.024 0.035 0.245 0.265 0.090 BSC 4.400 1.250 1.270 6 of 6 0.146 0.033 0.035 0.173 0.049 0.050