1N4732

1N4728-1N4764 Zener Diodes POWER DISSIPATION: 1.0 W Features DO-41 Silicon planar power zener diodes For use in stabilizing and clipping circuits with high power rating. Standard zener voltage tolerance is ±10%. Add suffix "A" for ±5% tolerance. other zener voltage and tolerances are available upon request. Mechanical Data Case:DO-41 Terminals: solderable per MIL-STD-202, method 208 Polarity: cathode band Marking: type number Approx. weight: 0.35 grams. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. SYMBOL VALUE UNIT PDiss 1.01) W Z-current IZ PV/VZ mA Junction temperature TJ 200 Storage temperature range Ts -55---+200 RThJA 100 K/W TYP MAX UNIT 1.2 V Zener current (see Table "Characteristics") Pow er dissipation @ Tamb 50 Junction ambient I=9.5mm(3/8 ), TL=constant SYMBOL VF Forw ard voltage at IF=200mA ht t p : // Revision:20170701-P1 MIN www.lgesemi .c o m mail:lge@lgesemi.com 1N4728-1N4764 Zener Diodes ELECTRICAL CHARACTERISTICS (TA=25 ) Max surge current 8.3ms Maximum regulator current 2) @V R IR@Tamb =25 IZM @Tamb =50 (μA ) (V ) (mA ) (mA ) 1.0 100 1 1380 276 400 1.0 100 1 1260 252 9 400 1.0 50 1 1190 234 58 9 400 1.0 10 1 1070 217 4.7 53 8 500 1.0 10 1 970 193 1N4733 5.1 49 7 550 1.0 10 1 890 178 1N4734 5.6 45 5 600 1.0 10 2 810 462 1N4735 6.2 41 2 700 1.0 10 3 730 146 1N4736 6.8 37 3.5 700 1.0 10 4 660 133 1N4737 7.5 34 4.0 700 0.5 10 5 605 121 1N4738 8.2 31 4.5 700 0.5 10 6 550 110 1N4739 9.1 28 5.0 700 0.5 10 7 500 100 1N4740 10 25 7 700 0.25 10 7.6 454 91 1N4741 11 23 8 700 0.25 5 8.4 414 83 1N4742 12 21 9 700 0.25 5 9.1 380 76 1N4743 13 19 10 700 0.25 5 9.9 344 69 1N4744 15 17 14 700 0.25 5 11.4 304 61 1N4745 16 15.5 16 700 0.25 5 12.2 285 57 1N4746 18 14 20 750 0.25 5 13.7 250 50 1N4747 20 12.5 22 750 0.25 5 15.2 225 45 1N4748 22 11.5 23 750 0.25 5 16.7 205 41 1N4749 24 10.5 25 750 0.25 5 18.2 190 38 1N4750 27 9.5 35 750 0.25 5 20.6 170 34 1N4751 30 8.5 40 1000 0.25 5 22.8 150 30 1N4752 33 7.5 45 1000 0.25 5 25.1 135 27 1N4753 36 7.0 50 1000 0.25 5 27.4 125 25 1N4754 39 6.5 60 1000 0.25 5 29.7 115 23 1N4755 43 6.0 70 1500 0.25 5 32.7 110 22 1N4756 47 5.5 80 1500 0.25 5 35.8 95 19 1N4757 51 5.0 95 1500 0.25 5 38.8 90 18 1N4758 56 4.5 110 2000 0.25 5 42.6 80 16 1N4759 62 4.0 125 2000 0.25 5 47.1 70 14 1N4760 68 3.7 150 2000 0.25 5 51.7 65 13 1N4761 75 3.3 175 2000 0.25 5 56.0 60 12 1N4762 82 3.0 200 3000 0.25 5 62.2 55 11 1N4763 91 2.8 250 3000 0.25 5 69.2 50 10 1N4764 100 2.5 350 3000 0.25 5 79.0 45 9 Nominal zener voltage 1) Test current V z@IZT IZT ZZT @I ZT Z ZK@IZK IZK IR (V ) (mA ) (Ω) (Ω) (m A) 1N4728 3.3 76 10 400 1N4729 3.6 69 10 1N4730 3.9 64 1N4731 4.3 1N4732 Maximum dynamic impedance Maximum reverse leakage current Type 1)Based on dc_m easurem ent at theral equilibrium while m aitaining the lead tem perature (TL) at 30 +1 ,9.5m m (3/8")f rom the D iode body . 2)Valid prov ided that electrodes at a distance of 10 m m f orm case kept at am bient tem perature. *)Additionnal m easurem ent of v oltage gruup 9v 1 to 75 at 95% V ZMIN 35nA at TJ25 ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com 1N4728-1N4764 Zener Diodes Ratings AND Charactieristic Curves FIG.1 -- BREAKDOWN CHARACTERISTICS mA 5 100 15 10 20 25 30 V 80 IZ 60 40 20 1N4750 1N4749 1N4748 1N4747 1N4744 1N4741 1N4742 1N4739 1N4733 1N4735 1N4731 1N4732 1N4728 0 VZ FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE W 1.0 0.8 Ptot 0.6 0.4 0.2 0 0 100 200℃ Tamb PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG DO-41 5000/AMMO 50000 42X28X31 14.00 12.00 ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com