IRLR8726T

HXY IRLR8726T ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Description The IRLR8726T uses advanced trench technology to provide excellent RDS(ON), low gate charge and D operation with gate voltages as low as 4.5V. This S device is suitable for use as a G Battery protection or in other Switching application. TO252-2L General Features VDS = 30V ID =80 A PIN2 D RDS(ON) < 6.8mΩ @ VGS=10V ! Application " PIN1 G ! Battery protection ! " " " ! Load switch PIN3 S Uninterruptible power supply N-Channel MOSFET Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) IRLR8726T TO252-2L 80N03D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V Drain Current – Continuous (TC=25℃) 80 A Drain Current – Continuous (TC=100℃) 51 A IDM Drain Current – Pulsed1 320 A EAS Single Pulse Avalanche Energy2 88 mJ IAS Single Pulse Avalanche Current2 42 A Power Dissipation (TC=25℃) 54 W Power Dissipation – Derate above 25℃ 0.43 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction to ambient 62 ℃/W RθJC Thermal Resistance Junction to Case 2.3 ℃/W ID PD Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY IRLR8726T ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient IDSS IGSS RDS(ON) VGS(th) Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA VGS=±20V , VDS=0V --- --- ±100 nA VGS=10V , ID=20A --- 5 6.8 mΩ VGS=4.5V , ID=10A --- 6.5 9 mΩ 1 1.6 2.5 V --- -4 --- mV/℃ --- 18 --- S --- 11.1 --- --- 1.85 --- Drain-Source Leakage Current Gate-Source Leakage Current Static Drain-Source On-Resistance3 Gate Threshold Voltage VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient gfs Forward Transconductance Qg Total Gate Charge3 , 4 VDS=10V , ID=10A Qgs Gate-Source Charge3 , 4 Qgd Gate-Drain Charge3 , 4 --- 6.8 --- Td(on) Turn-On Delay Time3 , 4 --- 7.5 --- Tr VDS=15V , VGS=4.5V , ID=20A Rise Time3 , 4 VDD=15V , VGS=10V , RG=3.3Ω --- 14.5 --- Turn-Off Delay Time3 , 4 ID=15A --- 35.2 --- --- 9.6 --- --- 1160 --- nC ns Td(off) Tf Fall Time3 , 4 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz Coss Output Capacitance --- 200 --- Crss Reverse Transfer Capacitance --- 180 --- pF Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.5 --- Ω EAS Single Pulse Avalanche Energy VDD=25V, L=0.1mH, IAS=20A 20 --- --- mJ IS Continuous Source Current --- --- 80 A --- --- 320 A --- --- 1 V --- --- --- ns --- --- --- nC Rg VG=VD=0V , Force Current ISM Pulsed Source Current3 VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ trr Reverse Recovery Time VGS=0V,IS=1A , di/dt=100A/µs Qrr Reverse Recovery Charge Shenzhen HuaXuanYang Electronics CO.,LTD TJ=25℃ www.hxymos.com HXY IRLR8726T ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG F ig.1 TC , Case Temperature ( ) ℃ Continuous Drain Current vs. Tc Fig. 3 TJ , Junction Temperature ( ) ℃ Normalized Vth vs. Tj J Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance Shenzhen HuaXuanYang Electronics CO.,LTD TJ , Junction Temperature ( ) ℃ Fig.2 Normalized RDSON vs. Tj Qg , Gate Charge ( Fig. 4 ) nC Gate Charge Waveform VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area www.hxymos.com HXY IRLR8726T ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG VDS EAS= 90% 1 L x I AS2 x 2 BV DSS BV DSS-VDD BV DSS 10% VGS Td(on) Tr Ton F ig. 7 Td(off) VDD IAS Tf Toff Switching Time Waveform Shenzhen HuaXuanYang Electronics CO.,LTD VGS F ig. 8 EAS Wavefo rm www.hxymos.com HXY IRLR8726T ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG TO252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 0.483 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 L1 L2 2.900 TYP. 1.400 L3 0.409 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HXY IRLR8726T ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein in such applications. ■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein. ■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA XUAN YANG ELECTRONICS CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the HUA XUAN YANG ELECTRONICS product that you intend to use. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com