IRFR5305T

HXY IRFR5305T ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Description The IRFR5305T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This D S device is suitable for use as a G Battery protection or in other Switching application. TO252-2L General Features VDS =- 60V,ID =-20A RDS(ON) < 72mΩ @ V GS=-10V D RDS(ON) < 100mΩ @ V GS=-4.5V Application G PWM applications Load switch S Power management P-Channel MOSFET Package Marking and Ordering Information Product ID IRFR5305T Pack TO25 2-2L Marking Qty(PCS) 20P06 XXYYYY 2500 ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V -20 A -15 A -48 A 40 W -55 To 175 ℃ 20 ℃/W ID(25℃) ID(70℃) Drain Current-Continuous@ Current-Pulsed (Note 1) IDM PD TJ,TSTG RθJA Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient (Note 2) Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY IRFR5305T ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-48V,V GS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.8 -2.5 V VGS=-10V, ID=-10A 64 72 mΩ Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-10A 90 100 mΩ Forward Transconductance gFS Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance VDS=-5V,ID=-20A -60 Unit -1 V 5 S 2460 PF 220 PF Crss 155 PF Turn-on Delay Time td(on) 14 nS Turn-on Rise Time tr 20 nS 40 nS Turn-Off Delay Time td(off) VDS=-30V,V GS=0V, F=1.0MHz VDS=-30V,V GS=10V,RGEN=3Ω ID=1A Turn-Off Fall Time tf 19 nS Total Gate Charge Qg 48 nC Gate-Source Charge Qgs 11 nC Gate-Drain Charge Qgd 10 nC Body Diode Reverse Recovery Time Trr 40 nS Body Diode Reverse Recovery Charge Qrr 56 nC Diode Forward Voltage (Note 3) VSD VDS=-30V,ID=-20A,V GS=-10V IF=-20A, dI/dt=100A/µs VGS=0V,IS=-1A -0.72 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY IRFR5305T ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) -ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation -ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current -Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS Shenzhen HuaXuanYang Electronics CO.,LTD -ID- Drain Current (A) Figure 6 Drain-Source On-Resistance www.hxymos.com HXY IRFR5305T ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET -ID- Drain Current (A) Normalized On-Resistance HUAXUANYANG TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) -Vgs Gate-Source Voltage (V) -Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds -Is- Reverse Drain Current (A) -Vgs Gate-Source Voltage (V) -Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge Shenzhen HuaXuanYang Electronics CO.,LTD -Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward www.hxymos.com HXY IRFR5305T ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET -ID- Drain Current (A) HUAXUANYANG Vds Drain-Source Voltage (V) Safe Operation Area ZthJA Normalized Transient Thermal Resistance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY IRFR5305T ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG TO252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HXY IRFR5305T ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the HUA XUAN YANG ELECTRONICS product that you intend to use. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com