AOD442-HXY

HXY AOD442 ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Description The AOD442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This D S device is suitable for use as a G Battery protection or in other Switching application. TO252-2L General Features VDS = 60V ID =50 A PIN2 D ! RDS(ON) < 15mΩ @ VGS=10V " Application PIN1 G ! ! " " " ! Battery protection PIN3 S N-Channel MOSFET Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AOD442 TO252-2L 50N06 XXXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 50 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 25 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 7.4 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 6 A IDM Pulsed Drain Current2 90 A EAS Single Pulse Avalanche Energy3 39.2 mJ IAS Avalanche Current 28 A PD@TC=25℃ Total Power Dissipation4 45 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY AOD442 ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Thermal Resistance Junction-Case1 RθJC 2.8 ℃/W Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ VGS=10V , ID=20A --- 11 15 RDS(ON) VGS(th) Static Drain-Source Gate Threshold Voltage VGS=4.5V , ID=10A --1.2 15 --- 20 2.5 mΩ V △VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA VDS=48V , VGS=0V , TJ=25℃ ----- -5.68 --- --1 mV/℃ IDSS IGSS Drain-Source Leakage Current Gate-Source Leakage Current VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=±20V , VDS=0V --- --- ±100 uA nA gfs Forward Transconductance VDS=5V , ID=15A --- 45 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 --- Ω Qg Total Gate Charge (4.5V) --- 19.3 --- Qgs Gate-Source Charge --- 7.1 --- Qgd Gate-Drain Charge --- 7.6 --- Td(on) Turn-On Delay Time --- 7.2 --- --- 50 --- --- 36.4 --- --- 7.6 --- --- 2423 --- --- 145 --- --- 97 --- --- --- 35 A --- --- 80 A --- --- 1 V --- 16.3 --- nS --- 11 --- nC Tr Td(off) Tf On-Resistance2 Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance IS Continuous Source Current1,5 ISM VSD Pulsed Source Current2,5 Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VDS=48V , VGS=4.5V , ID=15A VDD=30V , VGS=10V , RG=3.3 , ID=15A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=A , TJ=25℃ IF=15A , TJ=25℃ dI/dt=100A/µs , nC ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY AOD442 ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Typical Characteristics 20 ID=12A RDSON (mΩ) 19 18 17 16 15 4 6 VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source Fig.1 Typical Output Characteristics Voltage 12 IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics diode 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) Fig.5 Normalized VGS(th) v.s TJ Shenzhen HuaXuanYang Electronics CO.,LTD 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ www.hxymos.com HXY AOD442 ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG 10000 Capacitance (pF) F=1.0MHz Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM TON T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TJpeak = TC + PDM x RθJC 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Shenzhen HuaXuanYang Electronics CO.,LTD VGS Fig.11 Unclamped Inductive Switching Waveform www.hxymos.com HXY AOD442 ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG TO252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 0.483 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 L1 L2 2.900 TYP. 1.400 L3 0.409 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HXY AOD442 ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein in such applications. ■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein. ■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA XUAN YANG ELECTRONICS CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the HUA XUAN YANG ELECTRONICS product that you intend to use. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com