SWD078R08E8T

SW078R08E8T N-channel Enhanced mode TO-252 MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ TO-252 High ruggedness Low RDS(ON) (Typ 8.6mΩ)@VGS=10V Low Gate Charge (Typ 92nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter General Description BVDSS : 80V ID : 95A RDS(ON) : 8.6mΩ 2 1 2 3 1 1. Gate 2.Drain 3.Source 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW D 078R08E8T SW078R08E8T TO-252 REEL Value Unit Drain to source voltage 80 V Continuous drain current (@TC=25oC) 95* A Continuous drain current (@TC=100oC) 62* A 380 A ± 20 V Absolute maximum ratings Symbol VDSS Parameter ID IDM Drain current pulsed (note 1) VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 240 mJ EAR Repetitive avalanche energy (note 1) 20 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns 138.9 W 1.1 W/oC -55 ~ + 150 oC Value Unit 0.9 oC/W Total power dissipation (@TC=25oC) PD Derating factor above 25oC TSTG, TJ Operating junction temperature & storage temperature *. Drain current is limited by junction temperature. Thermal characteristics Symbol Rthjc Parameter Thermal resistance, Junction to case Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 1/6 SW078R08E8T Electrical characteristic ( TJ = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 80 ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current V V/oC 0.06 VDS=80V, VGS=0V 1 uA VDS=64V, TJ=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 4 V 9.9 mΩ IGSS On characteristics VGS(TH) RDS(ON) Gfs Gate threshold voltage Drain to source on state resistance Forward transconductance VDS=VGS, ID=250uA 2 =25oC VGS=10V, ID=40A,TJ 8.6 VGS=10V, ID=40A,TJ=125oC 13.3 mΩ 55 S VDS=5V, ID=40A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 4493 VGS=0V, VDS=40V, f=1MHz 240 pF 222 24 VDS=40V, ID=30A, RG=4.7Ω, VGS=10V (note 4,5) 67 ns 96 Fall time 39 Qg Total gate charge 92 Gate-drain charge VDS=64V, VGS=10V, ID=30A , IG=3mA (note 4,5) Qgs Gate-source charge Qgd Rg Gate resistance VDS=0V, Scan F mode 5 23 nC 34 Ω Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 95 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 380 A Diode forward voltage drop. IS=45A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=30A, VGS=0V, dIF/dt=100A/us 39 ns 60 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.5mH, IAS =31A, VDD=40V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 2/6 SW078R08E8T Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 3/6 SW078R08E8T Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area Fig. 8. Capacitance Characteristics Fig. 10. Maximum drain current vs. case temperature Fig. 11. Transient thermal response curve Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 4/6 SW078R08E8T Fig. 12. Gate charge test circuit & waveform Fig. 13. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr td(off) tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 5/6 SW078R08E8T Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 0.6 6/6