SWD9N25D

SW9N25D N-channel Enhanced mode TO-220/TO-252 MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ BVDSS : 250V TO-252 TO-220 ID High ruggedness Low RDS(ON) (Typ 0.37Ω)@VGS=10V Low Gate Charge (Typ 20.3nC) Improved dv/dt Capability 100% Avalanche Tested Application: LED , DC-DC : 9A RDS(ON) : 0.37Ω 1 2 1 3 2 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW P 9N25D SW9N25D TO-220 TUBE 2 SW D 9N25D SW9N25D TO-252 REEL Absolute maximum ratings Value Symbol Parameter Unit TO-220 VDSS ID TO-252 Drain to source voltage 250 V Continuous drain current (@TC=25oC) 9* A Continuous drain current (@TC=100oC) 5.7* A 36 A ± 25 V IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 162 mJ EAR Repetitive avalanche energy (note 1) 16 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns PD TSTG, TJ TL (note 1) Total power dissipation (@TC=25oC) 114 96 W Derating factor above 25oC 0.9 0.8 W/oC Operating junction temperature & storage temperature -55 ~ + 150 oC 300 oC Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value TO-220 TO-252 Unit Rthjc Thermal resistance, Junction to case 1.1 1.3 oC/W Rthja Thermal resistance, Junction to ambient 51 85 oC/W Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 1/6 SW9N25D Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 250 V V/oC 0.28 VDS=250V, VGS=0V 1 uA VDS=200V, TC=125oC 50 uA Gate to source leakage current, forward VGS=25V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-25V, VDS=0V -100 nA 4 V 0.45 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=4.5A 0.37 Forward transconductance VDS=20V, ID=4.5A 6.8 Gfs 2 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 679 VGS=0V, VDS=25V, f=1MHz 104 pF 21 7 VDS=125V, ID=9A, RG=25Ω, VGS=10V (note 4,5) 31 ns 50 Fall time 30 Qg Total gate charge 20.3 Gate-drain charge VDS=200V, VGS=10V, ID=9A Ig=7mA (note 4,5) Qgs Gate-source charge Qgd Rg Gate resistance VDS=0V, Scan F mode 1.5 3.7 nC 8.6 Ω Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 9 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 36 A Diode forward voltage drop. IS=9A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=9A, VGS=0V, dIF/dt=100A/us 175 ns 859 nC May.2022. Rev. 4.0 2/6 ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =4mH, IAS =9A, VDD=50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 9A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. SW9N25D Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 3/6 SW9N25D Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area(TO-220) Fig. 8. Capacitance Characteristics Fig. 10. Maximum safe operating area(TO-252) Fig. 11. Transient thermal response curve(TO-220) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 4/6 SW9N25D Fig. 12. Transient thermal response curve(TO-252) Fig. 13. Gate charge test circuit & waveform Fig. 14. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON Copyright@ Semipower Technology Co., Ltd. All rights reserved. td(off) tf tOFF May.2022. Rev. 4.0 5/6 SW9N25D Fig. 15. Unclamped Inductive switching test circuit & waveform Fig. 16. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 6/6