SWD6N65D

SW6N65D N-channel Enhanced mode TO-252 MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ BVDSS : 650V TO-252 ID High ruggedness Low RDS(ON) (Typ 1.3Ω)@VGS=10V Low Gate Charge (Typ 22nC) Improved dv/dt Capability 100% Avalanche Tested Application: LED , Charger : 6A RDS(ON) : 1.3Ω 2 1 2 1 3 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW D 6N65D SW6N65D TO-252 REEL Value Unit 650 V Continuous drain current (@TC=25oC) 6* A Continuous drain current (@TC=100oC) 3.8* A 24 A ± 30 V Absolute maximum ratings Symbol VDSS ID Parameter Drain to source voltage IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 147 mJ EAR Repetitive avalanche energy (note 1) 6 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@TC=25oC) 236 W Derating factor above 25oC 1.9 W/oC -55 ~ + 150 oC 300 oC Value Unit 0.53 oC/W PD TSTG, TJ TL (note 1) Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Rthjc Parameter Thermal resistance, Junction to case Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 1/6 SW6N65D Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 650 V V/oC 0.62 VDS=650V, VGS=0V 1 uA VDS=520V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 1.7 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=3A 1.3 Forward transconductance VDS=30V, ID=3A 5 Gfs 2.5 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 810 VGS=0V, VDS=25V, f=1MHz 95 pF 20 21 VDS=325V, ID=6A, RG=25Ω, VGS=10V (note 4,5) 31 ns 56 Fall time 27 Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 22 VDS=520V, VGS=10V, ID=6A (note 4,5) 5.4 nC 10 Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 6 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 24 A Diode forward voltage drop. IS=6A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=6A, VGS=0V, dIF/dt=100A/us 440 ns 3.0 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =8.2mH, IAS =6A, VDD=50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 6A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 2/6 SW6N65D Fig. 1. On-state characteristics Fig. 3. Gate charge characteristics Fig 5. Breakdown voltage variation vs. junction temperature Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 3/6 SW6N65D Fig. 7. Maximum safe operating area Fig. 8. Capacitance Characteristics Fig. 9. Transient thermal response curve Fig. 10. Gate charge test circuit & waveform Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 4/6 SW6N65D Fig. 11. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD 10VIN DUT 10% 10% VIN td(on) td(off) tr tON tf tOFF Fig. 12. Unclamped Inductive switching test circuit & waveform Fig. 13. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period Copyright@ Semipower Technology Co., Ltd. All rights reserved. VDD VF Body diode forward voltage drop May.2022. Rev. 4.0 5/6 SW6N65D DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 6/6