IRFR9024NTR

HXY IRFR9024NTR ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Description The IRFR9024NTR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This D S device is suitable for use as a Battery protection G or in other Switching application. TO252-2L General Features D VDS = -60V ID =-10 A RDS(ON) < 120mΩ @ VGS=10V G Application S Brushless motor P-Channel MOSFET Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID IRFR9024NTR Pack Marking TO252-2L 10P06 XXXX YYYY Qty(PCS) 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -10 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -8.3 A ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -3.3 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -2.7 A IDM Pulsed Drain Current2 -26 A EAS Single Pulse Avalanche Energy3 29.8 mJ IAS Avalanche Current -24.4 A 31.3 W Dissipation4 PD@TC=25℃ Total Power PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 62 ℃/W 4.0 ℃/W RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 Thermal Resistance Shenzhen HuaXuanYang Electronics CO.,LTD 1 www.hxymos.com HXY IRFR9024NTR ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG P-Channel Electrical Characteristics (TJ =25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ VGS=-10V , ID=-3A VGS=-4.5V , ID=-2A VGS=VDS , ID =-250uA -----1.2 100 121 1.6 120 130 -2.5 VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 8.5 --- S Qg Total Gate Charge (-4.5V) --- 12.1 --- Qgs Gate-Source Charge --- 2.2 --- Qgd Gate-Drain Charge --- 6.3 --- Td(on) Turn-On Delay Time --- 9.2 --- Tr Rise Time --- 20.1 --- Td(off) Turn-Off Delay Time --- 46.7 --- Tf Fall Time --- 9.4 --- Ciss Input Capacitance --- 1137 --- Coss Output Capacitance --- 76 --- Crss Reverse Transfer Capacitance --- 50 --- --- --- -13 IS Continuous Source Current1,5 VDS=-48V , VGS=-4.5V , ID=-3A VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A VDS=-15V , VGS=0V , f=1MHz VG=VD=0V , Force Current mΩ V uA nC ns pF A Voltage2 VSD Diode Forward -----1.2 V VGS=0V , IS=-1A , TJ=25℃ Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,IAS =-24A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY IRFR9024NTR ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG P-Channel Typical Characteristics 80 10 ID=-6A VGS=-10V -ID Drain Current (A) 8 75 RDSON (mΩ) VGS=-7V VGS=-5V 6 VGS=-4.5V 70 4 VGS=-3V 65 2 0 60 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 2 2 Fig.1 Typical Output Characteristics 4 6 8 -VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 12 Voltage 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-6A 8 6 4 2 0 0 1 7 14 21 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics diode 2.2 Normalized On Resistance 1.5 Normalized VGS(th) 1.8 1 1.4 1.0 0.5 0.6 0.2 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) Fig.5 Normalized VGS(th) v.s TJ Shenzhen HuaXuanYang Electronics CO.,LTD 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ www.hxymos.com HXY IRFR9024NTR ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG 10000 100.00 F=1.0MHz Capacitance (pF) 100us 10.00 Ciss 1ms 1000 -ID (A) 10ms 1.00 100ms DC Coss 100 0.10 Crss Tc=25o C Single Pulse 10 0.01 1 5 9 13 17 21 -VDS , Drain to Source Voltage(V) 25 0.1 1 10 100 -VDS (V) 1000 Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Shenzhen HuaXuanYang Electronics CO.,LTD Fig.11 Unclamped Inductive Switching Waveform www.hxymos.com HXY IRFR9024NTR ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG TO252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HXY IRFR9024NTR ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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