NSD1624
High Reliability, Half Bridge Gate Driver
Datasheet (EN) 0.4
Product Overview
Applications
NSD1624 is a high voltage, high side-low side gate driver
having capability to deliver 4A source and sink current to
drive power MOSFETs or IGBTs.
Half-bridge, full-bridge and LLC converters.
The high side section is designed to endure a DC voltage
over 1200V with innovative and proven isolation
technology. NSD1624 offers best in class propagation delay,
low quiescent current, high negative and dv/dt immunity
on SW pin.
Solar inverters, Motor controls and EV charges
Both high side and low side driver section work from 10V
to 20V supply voltages having independent under voltage
lockout (UVLO) protection. NSD1624 has two independent
input pins (HIN and LIN) which are compatible for TTL and
CMOS logic. NSD1624 is available in LGA10, SOP8, and
SOP14 package with operating temperature range from
High density switching power supplies for Server, Telecom
and Industrial
Device Information
Part Number
NSD1624-DLAJR
Package
LGA10
Body Size
4.0 mm × 4.0 mm
NSD1624-DSPKR
SOP14(150mil)
8.6 mm × 3.9 mm
NSD1624-DSPR
SOP8(150mil)
4.9 mm × 3.9 mm
Functional Block Diagram
-40°C to 125°C.
Key Features
High voltage range: Up to 1200V(SOP14)/700V(SOP8)
Less than 35ns Propagation Delay
Less than 7ns Delay Matching
NSD1624 Block Diagram
4 A Source / 6A Sink Currents
High Negative and Transient Immunity up to 150V/ns on
SW pin
Gate Drive Supply Voltage from 10V to 17V
TTL and CMOS Compatible Input Logic
UVLO Protection for High-side and Low-side Drivers
Separated Grounds for Logic (SGND) and Driver in SOP14
package
High and Low Voltage Pins Separated for Maximum
Creepage and Clearance in SOP14 package
Copyright © 2021, NOVOSENSE
Page 1
NSD1624
1
INDEX
1.
PIN CONFIGURATION AND FUNCTIONS ..................................................................................................................... 3
2.
ABSOLUTE MAXIMUM RATINGS .................................................................................................................................. 4
3.
RECOMMENDED OPERATING CONDITIONS ............................................................................................................ 5
4.
THERMAL INFORMATION .............................................................................................................................................. 5
5.
SPECIFICATIONS ............................................................................................................................................................... 5
5.1.
5.2.
5.3.
5.4.
6.
ELECTRICAL CHARACTERISTICS ....................................................................................................................................... 5
SWITCHING CHARACTERISTICS......................................................................................................................................... 6
TYPICAL PERFORMANCE CHARACTERISTICS .................................................................................................................... 7
PARAMETER MEASUREMENT INFORMATION ................................................................................................................... 10
GENERAL DESCRIPTION ............................................................................................................................................... 10
6.1. OVERVIEW ...................................................................................................................................................................... 10
6.2. FUNCTIONAL BLOCK DIAGRAM ...................................................................................................................................... 10
6.3. FEATURE DESCRIPTION................................................................................................................................................... 11
6.3.1
Under Voltage Lock Out (UVLO) ............................................................................................................................11
6.3.2
Input Stage ..............................................................................................................................................................11
6.3.3
Input Table ..............................................................................................................................................................11
6.3.4
Output Stage ............................................................................................................................................................11
7.
APPLICATION NOTE ....................................................................................................................................................... 12
7.1.
7.2.
7.3.
7.4.
TYPICAL APPLICATION CIRCUIT ..................................................................................................................................... 12
ESD STRUCTURE ............................................................................................................................................................ 12
LAYOUT RECOMMENDATIONS......................................................................................................................................... 13
EXAMPLE........................................................................................................................................................................ 13
8.
PACKAGE INFORMATION ............................................................................................................................................. 14
9.
ORDERING INFORMATION........................................................................................................................................... 16
10.
DOCUMENTATION SUPPORT ................................................................................................................................... 16
11.
TAPE AND REEL INFORMATION ............................................................................................................................. 17
12.
REVISION HISTORY .................................................................................................................................................... 18
Copyright © 2021, NOVOSENSE
Page 2
NSD1624
Datasheet (EN) 0.4
1. Pin Configuration and Functions
VDD
1
10
BST
HI
2
9
HO
LI
3
8
SW
GND
4
7
NC
GND
5
6
LO
Figure 1.1 NSD1624 LGA10 Package
HI
1
8
BST
LI
2
7
HO
GND
3
6
SW
LO
4
5
VDD
Figure 1.2 NSD1624 SOP8 Package
HI
1
14
NC
LI
2
13
BST
SGND
3
12
HO
NC
4
11
SW
GND
5
10
NC
LO
6
9
NC
VDD
7
8
NC
Figure 1.3 NSD1624 SOP14 Package
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Page 3
NSD1624
Datasheet (EN) 0.4
Table 1.1 NSD1624 Pin Configuration and Description
PIN NO.
SYMBOL
FUNCTION
LGA10
SOP14
SOP8
4,5
5
3
GND
2
1
1
HI
Logic input for high-side driver.
3
2
2
LI
Logic input for low-side driver.
1
7
5
VDD
6
6
4
LO
Low-side driver output.
9
12
7
HO
High-side driver output.
10
13
8
BST
High-side floating supply.
8
11
6
SW
High-side supply return.
/
3
/
SGND
7
4,8,9,10,14
Power Ground, return for low-side driver.
Power supply for the input logic part and low-side driver.
NC
Signal ground, reference for input
Not connected
2. Absolute Maximum Ratings
Parameters
Symbol
Min
Max
Unit
Input Supply Voltage
VVDD
-0.3
24
V
High side SW pin voltage
VSW
-700
700
V
High side SW pin voltage
VSW
-700
700
V
High side floating voltage
VBST - VSW
-0.3
24
V
VHO
VSW-0.3
VBST+0.3
V
VHO, Transient for 100ns
VSW-2
VBST+0.3
VLO
-0.3
VVDD+0.3
V
VLO, Transient for 100ns
-2
VVDD+0.3
V
VSGND
-5
5
V
VHI, VLI, VVDD
VSGND -0.3
VSGND+20
V
Junction Temperature
TJ
-40
150
℃
Storage Temperature
TJ.ST
-40
150
℃
HBM
-2000
2000
V
CDM
-1000
1000
V
High side output voltage
Low side output voltage
Signal ground to GND1)
Input voltage to Signal ground
Electrostatic discharge
1)
Only for NSD1624 SOP14 Package
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NSD1624
Datasheet (EN) 0.4
3. Recommended Operating Conditions
Parameters
Symbol
Min
Max
Unit
Input Supply Voltage Range
VVDD
10
17
V
High Side Floating Voltage
VBST - VSW
10
17
V
High Side SW Pin Voltage
VSW
-700
700
V
High Side Output Voltage
VHO
VSW
VBST
V
Low Side Output Voltage
VLO
0
VVDD
V
Input Signal Voltage Range
VHI, VLI
VSGND
VSGND+17
V
Signal ground
VSGND
-3
3
V
Junction Temperature
TJ
-40
125
℃
Ambient Temperature
Ta
-40
125
℃
Comments
4. Thermal Information
Parameters
Symbol
LGA10
SOP8
SOP14
Unit
Junction-to-ambient thermal resistance
θJA
℃/W
Junction-to-case(top) thermal resistance
θJC(top)
℃/W
θJB
℃/W
Junction-to-board thermal resistance
1)
Standard JESD51-3 Low Effective Thermal Conductivity Test Board (1s) in an environment described in JESD51-2a.
2)
Standard JESD51-3 Low Effective Thermal Conductivity Test Board (1s) by transient dual interface test method described in
JESD51-14.
3)
Obtained by Simulating in an environment described in JESD51-2a.
5. Specifications
5.1. Electrical Characteristics
At VVDD = VBST = 15 V, VSGND = VSW = 0, all voltages are with respect to GND, no load on LO and HO, –40°C < TJ < 125°C
Parameter
Symbol
Min
Typ
Max
Unit
Comments
Supply Section
VDD quiescent current
IVDD_Q
0.4
0.5
mA
VLI = VH I= 0
High-side supply quiescent current
IBST_Q
0.6
0.7
mA
VLI = VHI = 0
VDD operating current
IVDD_O
1.1
/
mA
f = 500 kHz, CLOAD = 0
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Page 5
NSD1624
Datasheet (EN) 0.4
High-side supply operating current
IBST_O
SW to GND leakage current
ISW_LK
1.3
/
mA
f = 500 kHz, C LOAD = 0
0.01
uA
VSW = 700V
INPUT SECTION
Input rising threshold
VHI_H, VLI_H
1.8
2.1
2.4
V
Input falling threshold
VHI_L, VLI_L
0.9
1.2
1.5
V
Input voltage Hysteresis
VHI_HYS, VLI_HYS
0.9
V
High Level Logic Input Bias Current
IIN+
17
uA
VLI / VHI = 5V
Low Level Logic Input Bias Current
IIN-
0
uA
VLI = VHI = 0V
Input pulldown resistance
RIN
260
kohm
VLI = VHI = 3V
10
UNDER VOLTAGE LOCKOUT
turn-on threshold voltage of VDD
VDD_UV+
8.6
9.1
9.5
V
turn-off threshold voltage of VDD
VDD_UV-
8.2
8.7
9.1
V
V CC hysteresis
VDD_UVH
UVLO positive Threshold on VBST-VSW
VBST_UV+
7.9
8.4
8.9
V
UVLO negative Threshold on VBST-VSW
VBST_UV-
7.4
7.9
8.3
V
VBST hysteresis
VBST_UVH
0.5
V
Low level output voltage
VOL
0.06
V
ILO =100 mA
High level output voltage
VOH
0.12
V
ILO =-100 mA, VLOH =
VVDD-VLO
Low level output Resistance
ROL
0.6
Ohm
High level output Resistance
ROH
1.2
Ohm
Peak source current
IOSRC
4
A
V O=0 V
Peak sink current
IOSNK
6
A
V O=VDD
0.4
V
Output SECTION
5.2. Switching Characteristics
At VVDD = VBST = 15 V, VSGND = VSW = 0, all voltages are with respect to GND, no load on LO and HO if not mentioned, –40°C < TJ < 125°C
Parameter
Symbol
High Side Startup Time
Typ
Max
Unit
Tstartup
10
15
us
between VB>UVLO and First HO Pulse
Rise Time LO, HO
TR
10
ns
C load = 1000 pF
Fall Time LO, HO
TF
9
ns
C load = 1000 pF
Low-to-high delay matching
TLHDM
ns
Pulse width = 1 us
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Min
7
Comments
Page 6
NSD1624
Datasheet (EN) 0.4
High-to-low delay matching
THLDM
7
ns
Minimum Input Filter
TMPW
11
17
ns
Turn-on delay, LI to LO
TLDLH
22
35
ns
Turn-off delay, LI to LO
TLDHL
22
35
ns
Turn-on delay, HI to HO
THDLH
22
35
ns
Turn-off delay, HI to HO
THDHL
22
35
ns
Pulse width = 1 us
5.3. Typical Performance Characteristics
9
9.5
9
8.5
8
VDD ON
7.5
VDD OFF
7
-40 -20
0
BST UVLO Threshold(V)
VDD UVLO Threshold(V)
10
8.5
8
7.5
7
BST ON
6.5
BST OFF
6
20 40 60 80 100 120 140
-40 -20
Ambient Temperature (°C)
Figure 5.1 VDD UVLO Threshold vs Temperature
20 40 60 80 100 120 140
Ambient Temperature (°C)
Figure 5.2 BST UVLO Threshold vs Temperature
3
2.5
2
1.5
1
LI ON
0.5
LI OFF
0
-40 -20
0
20 40 60 80 100 120 140
Ambient Temperature (°C)
Figure 5.3 Low Input Logic Threshold vs Temperature
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High Input Threshold(V)
3
Low Input Threshold(V)
0
2.5
2
1.5
1
HI ON
0.5
HI OFF
0
-40 -20
0
20 40 60 80 100 120 140
Ambient Temperature (°C)
Figure 5.4 High Input Logic Threshold vs Temperature
Page 7
500
400
300
200
100
VDD=15V
0
-40 -20
0
BST Quiescent Current(uA)
VDD Quiescent Current(uA)
NSD1624
800
700
600
500
400
BST=15V
300
20 40 60 80 100 120 140
-40 -20
Ambient Temperature (°C)
Figure 5.5 VDD Quiescent Current vs Temperature
Figure 5.6 BST Quiescent Current vs Temperature
30
25
20
VDD=10V
VDD=12V
VDD=15V
15
10
-40 -20
0
Low Side PDLH(ns)
Low Side PDHL(ns)
20 40 60 80 100 120 140
Ambient Temperature (°C)
30
25
20
VDD=10V
VDD=12V
VDD=15V
15
10
20 40 60 80 100 120 140
-40 -20
Ambient Temperature (°C)
Figure 5.7 Low Side Turn-off Delay vs Temperature
0
20 40 60 80 100 120 140
Ambient Temperature (°C)
Figure 5.8 Low Side Turn-on Delay vs Temperature
35
30
25
VDD=10V
VDD=12V
VDD=15V
20
15
-40 -20
0
20 40 60 80 100 120 140
Ambient Temperature (°C)
Figure 5.9 High Side Turn-off Delay vs Temperature
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High Side PDLH(ns)
35
High Side PDHL(ns)
0
30
25
VDD=10V
VDD=12V
VDD=15V
20
15
-40 -20
0
20 40 60 80 100 120 140
Ambient Temperature (°C)
Figure 5.10 High Side Turn-on Delay vs Temperature
Page 8
NSD1624
VDD=10V
VDD=12V
VDD=15V
8
6
4
2
10
Turn-on DM(ns)
Turn-off DM(ns)
10
0
VDD=10V
VDD=12V
VDD=15V
8
6
4
2
0
-40 -20
0
20 40 60 80 100 120 140
-40 -20
Ambient Temperature (°C)
Figure 5.11 Turn-off Delay Match vs Temperature
Figure 5.12 Turn-on Delay Match vs Temperature
10
8
6
4
VDD=10V
VDD=12V
VDD=15V
2
0
-40 -20
0
LO Falling Time(ns)
LO Rising Time(ns)
20 40 60 80 100 120 140
Ambient Temperature (°C)
10
8
6
4
VDD=10V
VDD=12V
VDD=15V
2
0
20 40 60 80 100 120 140
-40 -20
Ambient Temperature (°C)
Figure 5.13 LO Rising Time(Co=1000pF) vs Temperature
0
20 40 60 80 100 120 140
Ambient Temperature (°C)
Figure 5.14 LO Falling time(Co=1000pF) vs Temperature
10
8
6
4
VDD=10V
VDD=12V
VDD=15V
2
0
-40 -20
0
20 40 60 80 100 120 140
Ambient Temperature (°C)
Figure 5.15 HO Rising Time(Co=1000pF) vs Temperature
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HO Falling Time(ns)
10
HO Rising Time(ns)
0
8
6
4
VDD=10V
VDD=12V
VDD=15V
2
0
-40 -20
0
20 40 60 80 100 120 140
Ambient Temperature (°C)
Figure 5.16 HO Falling time(Co=1000pF) vs Temperature
Page 9
NSD1624
Datasheet (EN) 0.4
5.4. Parameter Measurement Information
IN=LI/HI
L0
VIN_H
VIN_L
90%
90%
TLDLH
TLDHL
10%
90%
10%
10%
TF
TR
TLHDM
90%
90%
90%
THLDM
H0
10%
10%
THDLH
10%
TF
TR
THDHL
Figure 5.17 Propagation Delay, Channel to Channel Delay Match, rise and fall time
6. General Description
6.1. Overview
NSD1624 is a high reliability low side-high side gate driver with two independent input pins HIN and LIN dedicated to be used in ACDC and DC-AC power applications. Driver inputs are compatible with CMOS and TTL logic hence it provides easy interface with analog
and digital controllers. The high side is a floating section that usually require an effective bootstrap circuit to bias. High side Isolated
driver has high negative and dv/dt immunity on SW pin that improve the robustness of the driver. NSD1624 has independent under
voltage lock out feature for both high and low side gate drivers which ensure the working of both channels at VDD_UV+ and VBST_UV+.
In popular power converter topologies such as; half bridge, full bridge converter, LLC, two switch forward converter and phase-shift
full bridge, low and high side gate driver provides a function of buffer and level shifter. This driver can drive the top side MOSFET and
IGBT whose source and emitter node is a dynamically changing. Therefore, to make them stable referenced to a fixed potential, floatingdriver devices are necessary to use in these topologies.
NSD1624 offers best in class propagation delay, less than 7ns delay matching, low quiescent and operating current at high frequencies.
Input pins (HI and LI) allow full and independent flexible ON-OFF state of the output.
6.2. Functional Block Diagram
VDD
BST
HI
MOD
DEMOD
UVLO
And
Logic
HO
UVLO
SW
VDD
LI
DELAY
SGND
LO
GND
Figure 6.1 Functional Block Diagram
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NSD1624
Datasheet (EN) 0.4
6.3. Feature Description
6.3.1
Under Voltage Lock Out (UVLO)
NSD1624 has independent under voltage lock out feature for both high and low side gate drivers which ensure the working of both
channels at VDD_UV+ and VBST_UV+. If the VDD is below the VDD_UV+, the output of both high and low side channel will remain low.
Similarly, if the VBST is below the VBST_UV+, the output of high side channel will remain low. So the high side bias voltage has no
influence on the low side output channel, regardless of the state of the input signal.
The VDD and VBST ULVO protection circuits have hysteresis (VVDD_HYS) to prevent ground noise in power supply. Hysteresis also
allow small drops in supply power which are usually happen in startup.
6.3.2
Input Stage
NSD1624 is a low side-high side gate driver with two independent input pins HIN and LIN. Both the inputs are compatible with CMOS
and TTL logic which ensures that the inputs can be driven with analog and digital controllers.
The typical value of high input threshold (VIN_H) is 2.1 V whereas the low threshold (VIN_L) 1.2V. The typical value of hysteresis on
input pins is 0.9 V which offers higher noise immunity compared to traditional TTL logic implementations. NSD1624 also feature tight
control of the input pin threshold voltage levels which ease system design consideration and ensure stable operation across temperature.
Both the input pins are internally pulled-down through a resistor of 260K which indicates its logic state in case of floating pin. This
feature can be regarded as important because the outputs stay low in case of any input is floating. It is recommended to ground the
unused input pin especially in the practical applications. The input logic is explained in the following table.
6.3.3
Input Table
INPUTS
6.3.4
OUTPUTS
LI
HI
LO
HO
L
H
L
H
H
L
H
L
H
H
L
L
L
L
L
L
Output Stage
NSD1624 is equipped with two independent drivers. The device has ability to provide 4A source and sink current which can effectively
charge and discharge a load capacitor of 1nF in 10ns. There is no dead-time built in function in NSD1624, so both outputs can be turnedon at the same time. This feature allows NSD1624 to be used for two-switch converter.
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NSD1624
Datasheet (EN) 0.4
7. Application Note
7.1. Typical Application Circuit
The circuit shows a typical half-bridge configuration by using the driver NSD1624 which could be used in several popular power
converter topologies such as half-bridge/full bridge/LLC isolated topologies applications.
VBUS
VDD
CVDD
1
VDD
BST
S1
10
CBOOT
RHI
PWM1
2
HI
HO
9
3
LI
SW
8
4
GND
NC
7
5
GND
LO
6
RG
CHI
RLI
PWM2
Controller
CLI
S2
RG
GND
COMP
GND
Figure 7.1 Simplified Half-Bridge Schematic
7.2. ESD Structure
Figure.7.2 illustrates the multiple parasitic diodes involved in the ESD protection components of NSD1624 device.
VDD
BST
HI
HO
LI
SW
10V
10V
LO
SGND
GND
10V
Figure 7.2 ESD Structure for SOP14
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NSD1624
Datasheet (EN) 0.4
7.3. Layout Recommendations
PCB layout is important to get optimal performance. Some of the layout guidelines to be followed are listed below:
High frequency switching current that charges and discharges the gate of external power transistor, that causes EMI and
ringing issues. In order to minimize the parasitic inductance and ringing on the gate terminal of the low side MOSFET S2,
keep the low side loop ‘LO-S2-GND’ as small as possible. Similarly, keep the path of high side driver ‘HO-S1-SW’ as
minimum as possible.
Place a bypass capacitor CVDD as close to VDD pin as possible and minimized the path of ‘VDD-CVDD-GND’. Similarly, follow
the same rule for ‘VBST-CBOOT-SW’ loop.
Place a RC input filter with R=2 to 5Ω, & C=100pF close to the driver input pins (HI, LI)
Use of SMD type devices with low-ESR and low-ESL capacitor are highly recommended.
Large amount of copper should be placed at VDD, BST, GND, and SW pins for thermal dissipation.
7.4. Example
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NSD1624
Datasheet (EN) 0.4
8. Package information
Figure 9.1 LGA10 4X4 Package Shape and Dimension
Figure 9.2 SOP8 Package Shape and Dimension
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NSD1624
Datasheet (EN) 0.4
Figure 9.3 SOP14 Package Shape and Dimension
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NSD1624
Datasheet (EN) 0.4
9. Ordering Information
Part No.
Temperature
Automotive
Package
Type
Package
Drawing
MSL
SPQ
NSD1624-DLAR
NSD1624-DSPR
NSD1624-DSPKR
-40 to 125℃
-40 to 125℃
-40 to 125℃
NO
NO
NO
LGA10
SOP8(150mil)
SOP14(150mil)
LGA10
SOP8
SOP14
TBD
TBD
TBD
TBD
TBD
TBD
10. Documentation Support
Part Number
Product Folder
Datasheet
Technical Documents
Isolator selection guide
Click here
Click here
Click here
Click here
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NSD1624
Datasheet (EN) 0.4
11. Tape and Reel Information
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NSD1624
Datasheet (EN) 0.4
Figure 12.1 Tape and Reel Information
12. Revision History
Revision
0.4
Description
Initial version
Copyright © 2021, NOVOSENSE
Date
2021/7/09
Page 18