MDD15N10D

MDD15N10D 100V N-Channel Enhancement Mode MOSFET V(BR)DSS RDS(on)Max 110mΩ@10V 100V 120mΩ@4.5V ID Max TO-252 15A 2 Features 1. Gate 2. Drain 3. Source 1 ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) ● Moisture Sensitivity Level 1 ● Epoxy Meets UL 94 V-0 Flammability Rating ● Halogen Free 3 Application ● DC-DC Converters ● Power management functions Marking Equivalen t Circuit XXX: Date Code MDD 15N10D XXX Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 15 A Pulsed Drain Current (Note 1) IDM 60 A EAS 9 mJ PD 28 W RθJC 4.4 ℃/ W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -50 ~+150 ℃ Avalanche Energy Single Pulsed (Note 2) Power Dissipation Thermal Resistance Junction-to-Case(Note 3) Notes: 1.Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. 2.Tj=25℃, VDD= 50V, VG=10V, L=0.5mH, IAS=6A 3.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 1/6 V 1.0 MDD15N10D 100V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V IDSS Drain-Source Leakage Current VDS=100V, VDS=0V -- -- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 1.1 1.8 2.5 V VGS=10V, ID=10A -- RDS(ON) 95 110 mΩ Drain-Source On-State Resistance VGS=4.5V, ID=8A -- 100 120 mΩ Min Typ Max Unit -- 1070 -- pF -- 33 -- pF -- 30 -- pF -- 26 -- nC -- 5.4 -- nC -- 5.8 -- nC Min Typ Max Unit -- 7 -- ns Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Condition VDS=50V VGS=0V f=1MHz VDS=50V, VGS=10V, ID=10A (Note1,2) Switching Characteristics Symbol Parameter Condition td(on) Turn on Delay Time tr Turn on Rise Time VGS =10V, -- 24 -- ns td(off) Turn Off Delay Time RG=3Ω -- 24 -- ns -- 31 -- ns Min Typ Max Unit tf VDS=50V, (Note1,2) Turn Off Fall Time Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) -- -- 15 A ISM Pulsed Current -- -- 60 A VSD Drain-Source Diode Forward Voltage IS=15A, VGS=0V -- 0.8 1.2 V trr Body Diode Reverse Recovery Time -- 40 -- ns Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs -- 30.1 -- nC Notes: 1.Pulse test ; Pulse width 300us, duty cycle 2%. 2.Essentially independent of operating temperature. 2/6 V 1.0 MDD15N10D 100V N-Channel Enhancement Mode MOSFET ■ Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance vs. Junction Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge 3/6 MDD15N10D 100V N-Channel Enhancement Mode MOSFET 20 ID-Drain Current (A) 15 10 5 0 -50 0 50 100 Tc-Case Temperature (℃) Figure 8. Maximum Continuous Drain Current vs Case Temperature Figure 7. Safe Operation Area Figure 9. Normalized Maximum Transient Thermal Impedance 4/6 150 MDD15N10D 100V N-Channel Enhancement Mode MOSFET Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/6 V 1.0 MDD15N10D 100V N-Channel Enhancement Mode MOSFET Outlitne Drawing TO-252 Package Outline Dimensions Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 6/6 V 1.0