IRFR024N-HXY

HXY IRFR024N-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Description The IRFR024N-HXY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This D S device is suitable for use as a G Battery protection or in other Switching application. TO252-2L General Features VDS = 100V ID = 20A PIN2 D ! RDS(ON) < 87 mΩ @ VGS=10V " Application PIN1 G ! ! " " " ! Battery protection PIN3 S N-Channel MOSFET Load switch Uninterruptible power supply Package Marking and Ordering Information Pack Product ID IRFR024N-HXY TO252-2L Marking Qty(PCS) 20N10 XXX YYYY 2500 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol Parameter VDS Rating Units Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 20 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 10 A Continuous Drain Current, VGS @ 10V1 5 A Continuous Drain Current, VGS @ 10V1 3.4 A 30 A 6.1 mJ ID@TA=25℃ ID@TA=70℃ IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS Avalanche Current 15 A PD@TC=25℃ Total Power Dissipation4 34.7 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 62 ℃/W 3.6 ℃/W RθJA Thermal Resistance Junction-ambient RθJC Junction-Case1 Thermal Resistance Shenzhen HuaXuanYang Electronics CO.,LTD 1 www.hxymos.com HXY IRFR024N-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△T BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions VGS=0V , ID=250uA Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=10A --- 80 87 m VGS=4.5V , ID=8A --- 95 105 m 1.0 --- 2.5 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 13 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 ---  Qg Total Gate Charge (10V) --- 26.2 --- Qgs Gate-Source Charge --- 4.6 --- Qgd Gate-Drain Charge --- 5.1 --- Td(on) Turn-On Delay Time --- 4.2 --- Tr Td(off) Tf VDS=80V , VGS=10V , ID=10A nC Rise Time VDD=50V , VGS=10V , RG=3.3 --- 8.2 --- Turn-Off Delay Time ID=10A --- 35.6 --- --- 9.6 --- --- 1535 --- --- 60 --- --- 37 --- Min. Typ. Max. Unit --- --- 20 A --- --- 30 A --- --- 1.2 V --- 37 --- nS --- 27.3 --- nC Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=10A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY IRFR024N-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Typical Characteristics 25 VGS=10V VGS=7V 20 ID Drain Current (A) VGS=5V 15 VGS=4.5V 10 5 VGS=3V 0 0 2 4 6 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse diode 2.5 Normalized On Resistance Normalized VGS(th) (V) 1.8 2.0 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Shenzhen HuaXuanYang Electronics CO.,LTD 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ www.hxymos.com HXY IRFR024N-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG 10000 100.00 F=1.0MHz 10us 100us 10.00 1ms 1000 ID (A) Capacitance (pF) Ciss 10ms 100ms 1.00 100 DC Coss 0.10 TC=25℃ Single Pulse Crss 10 0.01 1 5 9 13 17 21 25 0.1 1 10 VDS , Drain to Source Voltage (V) 100 1000 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Shenzhen HuaXuanYang Electronics CO.,LTD VGS Fig.11 Unclamped Inductive Switching Waveform www.hxymos.com HXY IRFR024N-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG TO-252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 0.483 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 L1 L2 2.900 TYP. 1.400 L3 0.409 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HXY IRFR024N-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the HUA XUAN YANG ELECTRONICS product that you intend to use. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com