AOD4144-HXY

HXY AOD4144-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Description The AOD4144-HXY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This D device is suitable for use as a S G Battery protection or in other Switching application. TO252-2L General Features VDS = 30V ID =60 A PIN2 D RDS(ON) < 9mΩ @ VGS=10V ! Application " PIN1 G ! Battery protection ! " " " ! Load switch PIN3 S Uninterruptible power supply N-Channel MOSFET Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AOD4144-HXY TO252-2L 60N03D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 60 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 40 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 13.6 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 11.4 A IDM Pulsed Drain Current2 110 A EAS Single Pulse Avalanche Energy3 57.8 mJ IAS Avalanche Current 34 A PD@TC=25℃ Total Power Dissipation4 41 W PD@TA=25℃ Total Power Dissipation4 2.42 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Resistance Junction-ambient (Steady State)1 62 ℃/W Thermal Resistance Junction-Case1 3.6 ℃/W RθJA RθJC Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY AOD4144-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.027 --- V/℃ VGS=10V , ID=30A --- 7 9 VGS=4.5V , ID=15A --1.2 11 1.5 14 2.5 mΩ V -5.8 --- --1 mV/℃ VDS=24V , VGS=0V , TJ=25℃ ----- VDS=24V , VGS=0V , TJ=55℃ --- --- 5 RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 38 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.2 3.5 Qg Total Gate Charge (4.5V) --- 12.6 17.6 Qgs Gate-Source Charge --- 4.2 5.9 Qgd Gate-Drain Charge --- 5.1 7.1 Td(on) Turn-On Delay Time --- 4.6 9.2 Tr VGS=VDS , ID =250uA VDS=15V , VGS=4.5V , ID=15A uA nC Rise Time VDD=15V , VGS=10V , RG=3.3 --- 12.2 22 Turn-Off Delay Time ID=15A --- 26.6 53 Fall Time --- 8 16 Ciss Input Capacitance --- 1317 1843 Coss Output Capacitance --- 163 228 Crss Reverse Transfer Capacitance --- 131 183 --- --- 55 A --- --- 110 A --- --- 1.2 V --- 9.2 --- nS --- 2 --- nC Td(off) Tf IS Continuous Source Current VDS=15V , VGS=0V , f=1MHz 1,5 Current2,5 ISM Pulsed Source VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=30A , TJ=25℃ dI/dt=100A/µs , ns pF Note : 1 .The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY AOD4144-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Typical Characteristics 100 ID Drain Current (A) 75 VGS=10V VGS=7V VGS=5V 50 VGS=4.5V VGS=3V 25 0 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 3 Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 12 10 ID =15A TJ=25℃ VGS , Gate to Source Voltage (V) TJ=150℃ IS(A) 9 6 3 0 0 0.3 0.6 0.9 8 6 VDS=15V VDS=24V 4 2 0 1.2 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 12 18 QG , Total Gate Charge (nC) 24 30 Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 6 1.0 1 0.6 0.6 0.2 0.2 -50 25 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Shenzhen HuaXuanYang Electronics CO.,LTD 175 -50 -5 40 85 130 175 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ www.hxymos.com HXY AOD4144-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG 10000 F=1.0MHz Capacitance (pF) Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM TON T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TJpeak = TC + PDM x RθJC 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Shenzhen HuaXuanYang Electronics CO.,LTD VGS Fig.11 Unclamped Inductive Switching Waveform www.hxymos.com HXY AOD4144-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG TO252-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 0.483 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 L1 L2 2.900 TYP. 1.400 L3 0.409 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. Shenzhen HuaXuanYang Electronics CO.,LTD 0.211 TYP. www.hxymos.com HXY AOD4144-HXY ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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