HSH6117

HSH6117 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6117 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSH6117 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS -60 V RDS(ON),max 14 mΩ ID -80 A TO263 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter VDS Rating Units Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, -VGS @ -10V1 -80 A ID@TC=100℃ -10V1 -45 A -170 A 330 mJ 40 A 200 W IDM EAS IAS PD@TC=25℃ Continuous Drain Current, -VGS @ Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 62 ℃/W --- 0.81 ℃/W 1 HSH6117 P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V VGS=-10V , ID=-18A --- --- 14 VGS=-4.5V , ID=-12A --- --- 17 -1.0 --- -2.5 V --- 4.28 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-18A --- 43 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 ---  Qg Total Gate Charge --- 85 --- Qgs Gate-Source Charge --- 11 --- Qgd Gate-Drain Charge --- 30 --- Td(on) Turn-On Delay Time VDS=-30V , VGS=-10V , ID=-12A nC --- 18 --- Rise Time VDD=-30V , VGS=-10V , RG=6, --- 12 --- Turn-Off Delay Time ID=-1A --- 100 --- Fall Time --- 68 --- Ciss Input Capacitance --- 4635 --- Coss Output Capacitance --- 524 --- Crss Reverse Transfer Capacitance --- 241 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- -40 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Tr Td(off) Tf VDS=-30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current1,5 Voltage2 Conditions Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-30V,VGS=-10V,L=0.5mH,IAS=-40A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSH6117 P-Ch 60V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSH6117 P-Ch 60V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSH6117 P-Ch 60V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5