HD40N03

HD40N03 N-Channel Trench Power MOSFET General Description The HD40N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =40A RDS(ON) < 15 mΩ @ VGS =10V RDS(ON) < 22 mΩ @ VGS =5V Schematic Diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● ● ● PWM applications Load switch Power management TO-252(DPAK) top view 100% UIS TESTED! 100% ΔVds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity HD40N03 HD40N03 TO-252 325mm 16mm 2500 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 30 V ±20 V 40 A 28 A 160 A Maximum Power Dissipation(Tc=25℃) 40 W Maximum Power Dissipation(Tc=100℃) 25 W 90 mJ -55 To 175 ℃ VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) ID Drain Current-Continuous(Tc=100℃) IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol Parameter RJC Thermal Resistance,Junction-to-Case -1- Typ Max Unit - 3 ℃/W 2021-08-27 V1.2 HD40N03 Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.5 2.5 V VDS=5V,ID=20A 10 20 VGS(th) gFS RDS(ON) Forward Transconductance Drain-Source On-State Resistance 30 V S VGS=10V, ID=20A 12 15 mΩ VGS=5V, ID=15A 17 22 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 800 pF 133 pF 108 pF 2 Ω 7 nS 22 nS Turn-Off Delay Time 30 nS tf Turn-Off Fall Time 5 nS Qg Total Gate Charge 17 nC Qgs Gate-Source Charge 3 nC Qgd Gate-Drain Charge 10 nC VDS=15V,VGS=0V, f=1.0MHz VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=15V, RL=0.75,RGEN=3 VGS=10V, VDS=25V, ID=12A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A 50 A 1.2 V Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=30V,VG=10V, RG=25Ω -2- 2021-08-27 V1.2 HD40N03 Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： -3- 2021-08-27 V1.2 HD40N03 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Typical Output Characteristics TC=25°C VG=10V TC=150°C VG=8.0V VG=6.0V 100 VG=4.0V 50 100 VG=6.0V 50 VG=4.0V VG=3.0V VG=3.0V 0 0 0 2 3 4 5 7 8 6 Drain-to-Source Voltage,VDS (V) 0 9 Normalized On-Resistance,RDS(ON) 24 22 20 18 16 14 12 3 50 4 5 6 7 8 9 10 Gate-to-Source Voltage,VGS (V) 11 Maximum Drain Current vs. Case Temperature 1.6 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage,VDS (V) 1.4 1.2 1 0.8 0.6 -50 0 50 100 Junction Temperature,TJ (°C) 150 Typical Power Dissipation 60 45 1 Normalized On-Resistance vs. Junction Temperature ID=20A VG=10V 1.8 ID=20A TC=25°C 26 On-Resistance,RDS(ON) (mΩ) 1 On-Resistance vs. Gate Voltage 28 50 40 35 Power,PD (W) Drain Current,ID (A) VG=10V VG=8.0V Drain Current,ID (A) 150 Drain Current,ID (A) Typical Output Characteristics 150 30 25 20 15 10 40 30 20 10 5 0 25 0 50 75 100 125 Case Temperature,TC (°C) 150 0 -4- 50 100 Case Temperature,TC (°C) 150 2021-08-27 V1.2 HD40N03 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) 10 TJ=150°C TJ=25°C 1 0.1 0.01 0.1 Gate Threshold Voltage vs. Junction Temperature 3 Gate Threshold Voltage,VGS(TH) (V) Reverse Drain Current,IS (A) 100 Forward Characteristics of Reverse Diode 2 1 0 -50 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Body Diode Forward Voltage,VSD (V) 10000 ID=20A 14 f=1.0MHZ VDS=16V 12 Capacitance,C (pF) Gate to Source Voltage,VGS (V) 150 Typical Capacitance Characteristics Gate Charge Characteristics 16 VDS=20V 10 VDS=24V 8 6 4 CISS 1000 COSS 2 CRSS 0 100 0 5 10 15 20 25 30 35 Total Gate Charage,QG(nC) 40 1 Maximum Safe Operating Area 100 10µs 100µs 1ms 10 10ms TC=25°C Single Pulse 100ms 1 1 10 Drain to Source Voltage,VDS (V) 5 9 13 17 21 25 Drain to Source Voltage,VDS (V) 29 Effective Transient Thermal Impedance Normalized Thermal Response,RthJC 1000 Drain Current,ID (A) 0 100 50 Junction Temperature,TJ (°C) 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse PDM T Duty Factor=t/T Peak TJ=PDM×RthJC+TC 0.01 0.00001 0.0001 0.001 0.01 Pulse Width,t (s) 100 -5- t 0.1 1 2021-08-27 V1.2 HD40N03 TO-252 Package Information -6- 2021-08-27 V1.2