MOT65R380D

MOT65R380C MOT65R380D N-CHANNEL SUPER JUNCTION POWER MOSFET Symbol „ PRODUCT CHARACTERISTICS VDSS 650V RDS(on)Typ( @V GS =10 V) 0.33Ω Qg@type 4.8nC 2.Drain 1.Gate 11A ID „ APPLICATIONS * Power faction correction * Switched mode power supplies * Uninterruptible power supply 3.Source  FEATURES * low R DS(on) * low gate charge * 100% UIS tested * RoHS compliant 4 4 1 2 1 3 2 3 TO-251 TO-252 „ ORDER INFORMATION Order codes Package Packing Halogen-Free Halogen N/A MOT65R380C TO-251 70 pieces/Tube N/A MOT65R380D TO-252 2500 pieces /Reel  ABSOLUTE MAXIMUM RATINGS (TC=25℃ unless otherwise specified) Parameter Value VDSS 650 V 11 A 8.2 A 30 A VGSS ±30 V EAS 245 mJ IAR 11 A 90 W 0.72 W/°C 31.8 W 0.26 W/°C TJ, TSTG -55 to +150 °C IS 11 A IS,pulse 30 A Drain-Source Voltage ( TC = 25°C ) Continuous drain current ID ( TC = 100°C ) Pulsed drain current 1) IDM Gate-Source voltage Avalanche energy, single pulse 2) Avalanche current, repetitive 3) Power Dissipation ( TC = 25°C ) PD Power Dissipation Unit Symbol ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Continuous diode forward current Diode pulse current  THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 1.39 °C/W Thermal Resistance, Junction-to-Ambient RθJA 45 °C/W -1- www.mot-mos.com MOT65R380C MOT65R380D N-CHANNEL SUPER JUNCTION POWER MOSFET „ ELECTRICAL CHARACTERISTICS Parameter Symbol Test conditions Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 650 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA 2.5 3.5 4.5 V Drain cut-off current IDSS VDS=650 V, VGS=0 V, Tj = 25°C 1 Tj = 125°C - 10 μA Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 100 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -100 nA RDS(on) VGS=10 V, ID=5.5 A Tj = 25°C - Drain-source on-state resistance 0.33 0.38 Tj = 150°C - 0.9 - Gate resistance RG f=1 MHz, open drain - 5.7 - Ω Ω Dynamic characteristics Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Crss Turn-on delay time td(on) VDS = 25 V, VGS = 0 V, f = 1 MHz - 560 - - 216 - - 1.2 - - 20.6 - - 32 - pF VDD = 400V, ID = 5.5A ns Rise time tr Turn-off delay time td(off) - 62 Fall time tf - 12.5 Gate to source charge Qgs - 4.8 - Gate to drain charge Qgd VDD=400 V, ID=5.5A, - 4.7 - Gate charge total Qg VGS=0 to 10 V - 14.7 - Gate plateau voltage Vplateau - 6 - V - 1.2 - V - 234 - ns - 4.4 - μC - 18.7 - A RG = 10Ω, VGS=15V - Gate charge characteristics nC Reverse diode characteristics Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irrm VGS=0 V, IF=5.5A VR=400 V, IF=5.5A, dIF/dt=100 A/μs Notes: 1. Limited by maximum junction temperature, maximum duty cycle is 0.75. 2. IAS = 3A, VDD = 60V, Starting Tj= 25°C. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. -2- www.mot-mos.com MOT65R380C MOT65R380D N-CHANNEL SUPER JUNCTION POWER MOSFET  ELECTRCAL CHARACTERISTICS DIAGRAMS VGS=10V VGS=7V Common Source Tc = 25°C Pulse test Common Source Tc = 25°C VDS=20 V Pulse test Drain current ID (A) VGS=6.5V Drain current ID (A) VGS=6V VGS=5.5V Drain−source voltage VDS (V) Gate−source voltage VGS (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.3 1.2 Vth , (Normalized) Gate threshold voltage RDS (on) (Ω) 1.1 VGS = 10V Tc = 25°C Pulse test 1 0.9 0.8 0.7 IDS=0.25 mA Pulse test 0.6 0.5 -60 -40 -20 0 20 40 60 80 100 120 Drain current ID (A) Junction temperature Tj (°C) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature 160 2.5 RDS(on), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage 140 1.1 1 0.9 VGS=0 V IDS=0.25 mA Pulse test 0.8 0.7 2 1.5 1 VGS=10 V IDS=5.5 A Pulse test 0.5 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 Junction temperature Tj (°C) Junction temperature Tj (°C) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature -3- www.mot-mos.com 160 MOT65R380C MOT65R380D N-CHANNEL SUPER JUNCTION POWER MOSFET „ ELECTRICAL CHARACTERISTICS(Cont.) Gate-Source Voltage VGS (V) Capacitance (pF) Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss Coss Notes: f = 1 MHz VGS=0 V ID = 5.5A Crss Total Gate Charge QG (nC) Drain-Source Voltage VDS (V) Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characte TO-220F TO-220 10us 100us 1ms DC 10us Drain current ID (A) Drain current ID (A) Limited by Rds(on) 1ms 100us Limited by Rds(on) DC Notes: TC=25℃ TJ=150℃ Single Pulse Notes: TC=25℃ TJ=150℃ Single Pulse Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 9.2 Maximum Safe Operating Area TO-220 Drain power dissipation PD (W) Drain power dissipation PD (W) Figure 9.1 Maximum Safe Operating Area TO-220F 220F Case temperature Tc (°C) Case temperature Tc (°C) Figure 10.1 Power Dissipation vs. Temperature Figure 10.2 Power Dissipation vs. Temperature -4- www.mot-mos.com MOT65R380C MOT65R380D N-CHANNEL SUPER JUNCTION POWER MOSFET  TEST CIRCUITS AND WAVEFORMS Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms -5- www.mot-mos.com MOT65R380C MOT65R380D N-CHANNEL SUPER JUNCTION POWER MOSFET n TO-252-2L PACKAGE OUTLINE DIMENSIONS -6- www.mot-mos.com MOT65R380C MOT65R380D N-CHANNEL SUPER JUNCTION POWER MOSFET n TO-251-3L PACKAGE OUTLINE DIMENSIONS -7- www.mot-mos.com