MOT130N03D

MOT130N03C MOT130N03D N-CHANNEL MOSFET „ PRODUCT CHARACTERISTICS VDSS RDS(on)Typ( @V GS =10 V) RDS(on)Typ( @V GS =4.5 V) ID Symbol 2.Drain 30V 2.5mΩ 3.5mΩ 130A 1.Gate „ APPLICATIONS Power switching circuit of adaptor and charge 3.Source „ FEATURES Fast switching Low ON fesistance Low gate charge Low reverse transfer capacitances 2 2 1 2 1 3 TO-252 2 3 TO-251 „ ORDER INFORMATION Order codes Halogen-Free Halogen N/A N/A Package TO-252 TO-251 MOT130N03D MOT130N03C Packing 2500 pieces /Reel 70 pieces /Tube „ ABSOLITE MAXIMUM RATINGS (TC =25ć, unless otherwise specified) Parameter Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C˄ Package limited ˅ Pulsed Drain Current TC = 25 °C˄ Package limited ˅ Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM VGS EAS PD TJˈTstg Rating 30 130 60 240 f20 540 83 0.666 ±55 to 150 Units V A A A V mJ W W/ć ć Symbol R© JC R© JA Max. 1.5 100 Units ć/W ć/W „ THERMAL DATA Parameter Junction-to-Case Junction-to-Ambient -1- www.mot-mos.com MOT130N03C MOT130N03D N-CHANNEL MOSFET „ ELECTRICAL CHARACTERISTICS (TJ =25ć, unless otherwise noted) Drain to Source Leakage Current Symbol VDSS IDSS Gate to Source Forward Leakage Gate to Source Reverse Leakage IGSS(F) IGSS(R) Drain-to-Source On-Resistance RDS(ON) VGS=10V,ID=19A Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA Parameter Drain to Source Breakdown Voltage Test Conditions VGS=0V, ID=250µA VDS =30V, VGS= 0V VDS =24V, VGS= 0V, TJ = 125ć VGS =+20V VGS =-20V VGS=4.5V,ID=19A Min. Typ. Max. 30 1.0 2.5 3.5 - 1 100 100 -100 3.5 4.8 3.0 - 2.3 2400 380 350 - - 14.8 15.2 119.6 59.2 79.1 13.6 16.0 - - 44.4 34.6 1.6 60 240 1.2 - Units V µA µA nA nA mΩ mΩ V Dynamic Characteristics Gate resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Ciss Coss Crss VGS=0V, VDS=0V, f=1MHz VGS=0VˈVDS=15V f=1.0MHz Ω pF Resistive Switching Characteristics Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain (“Miller” )Charge td(ON) tr td(OFF) tf Qg Qgs Q gd VGS=10VˈR G=6Ω VDD=15VˈID=50A VGS=10VˈVDD=15V ID=50A ns nC Source-Drain Diode Characteristics Continuous Source Current (Body Diode) Maximum Pulsed Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IS ISM VSD trr Qrr IRRM IS=50A,VGS=0V IS=50A,Tj = 25ć dIF/dt=100A/us, -2- A A V ns nC A www.mot-mos.com MOT130N03C MOT130N03D N-CHANNEL MOSFET „ TEST CIRCUIT AND WAVEFORM Figure1. Maximum Forward Bias Safe Operating Area Figure2. Maximum Power Dissipation vs Case Temperature Figure3. Maximum Continuous Drain Current vs Figure 4. Typical Output Characteristics Case Temperature Figure5. Maximum Effective Transient Thermal Impedance, Junction-to-Case -3- www.mot-mos.com MOT130N03C MOT130N03D N-CHANNEL MOSFET „ TYPICAL CHARACTERISTICS Figure 6. Typical Transfer Characteristics Figure 7. Typical Body Diode Transfer Characteristics Figure 8. Drain-to-Source On Resistance vs Drain Current Figure 9. Nomalized on Resistance vs Junction Temperature Figure 11. Nomalized Breakdown Voltage vs Figure 10. Nomalized Theshold Voltage vs Junction Temperature Junction Temperature -4- www.mot-mos.com MOT130N03C MOT130N03D N-CHANNEL MOSFET Drain Current,ID (A) Source-Drain Current,IS (A) „ TYPICAL CHARACTERISTICS(Cont.) Normalized Thermal Transient Impedanc Curve 100 D=0.5 0.2 -1 10 PDM 0.1 0.05 0.02 0.01 t2 1.R©JC(t)=r(t)*R©JC 2.R©JC=See Datasheet 3.TJM-TC=P*R©JC(t) 4.Duty Cycle,D=t1/t2 Single Pulse 10-2 10-5 t1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 100 101  -5- www.mot-mos.com MOT130N03C MOT130N03D N-CHANNEL MOSFET n TO-251 PACKAGE OUTLINE DIMENSIONS -6- www.mot-mos.com MOT130N03C MOT130N03D N-CHANNEL MOSFET n TO-252 PACKAGE OUTLINE DIMENSIONS -7- www.mot-mos.com