AO4435A

UMW R AO4435 30V P-Channel Enhancement Mode MOSFET Description The AO4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = - 30V I D = -12A RDS(ON) < 20mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Absolute Maximum Ratings (Tc=25℃ unless otherwise noted ) Symbol Parameter Rating Units VDS Drain-Source Voltage - 30 V VGS Gate-Source Voltage + 20 V ID@TA=25℃ Drain Current3, VGS @ 10V -12 A ID@TA=70℃ Drain Current3, VGS @ 10V -10 A IDM Pulsed Drain Current1 -50 A PD@TA=25℃ Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/℃ Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rthj-a Maximum Thermal Resistance, Junction-ambient3 50 ℃/W TSTG www.umw-ic.com 1 友台半导体有限公司 UMW R AO4435 30V P-Channel Enhancement Mode MOSFET Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions Min. Typ. Max. Units -30 - - V VGS=-10V, ID=-7A - 15 20 mΩ VGS=-4.5V, ID=-5A - 25 32 mΩ -0.9 -1.5 V VGS=0V, ID=-250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-10V, ID=-7A - 16 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -30 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-7A - 18 29 nC Qgs Gate-Source Charge VDS=-24V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 10 - nC td(on) Turn-on Delay Time VDS=-15V - 8 - ns tr Rise Time ID=-1A - 6.6 - ns td(off) Turn-off Delay Time RG=3.3Ω - 44 - ns tf Fall Time VGS=-10V - 34 - ns Ciss Input Capacitance - 1175 1690 pF Coss Output Capacitance - 195 - pF Crss Reverse Transfer Capacitance VGS=0V VDS=25V . f=1.0MHz - 190 - pF VSD Forward On Voltage2 IS=-2.1A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-7A, VGS=0V, dI/dt=100A/µs - 28 - ns Qrr Reverse Recovery Charge - 18 - nC -0.6 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t