AONR21357

AONR21357 P-Channel Enhancement Mode MOSFET www.sot23.com.tw GENERAL FEATURES Application Load/Power Switching Interfacing Switching VDS =-30V,I D =-50A RDS(ON) 8.0mΩ @VGS =-10V typ RDS(ON) 18mΩ @V GS =-4.5V typ Logic Level Shift Circuit diagram 子 Package and Pin Configuration D S S S G D D D D G S 电 PDFN3333 top view Marking: .21357 台 舟 Absolute Maximum Ratings (TA=25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -50 A ID (100 ) -32 A IDM -200 A PD 38 W EAS 125 mJ TJ,TSTG -55 To 150 Drain Current-Continuous Drain Current-Continuous(TC=100 ) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range 1 AONR21357 P-Channel Enhancement Mode MOSFET www.sot23.com.tw Electrical Characteristics (T j =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit - - ±100 nA -1.2 1.5 -2.5 8.0 15 Off Characteristics Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS V DS=-24V,VGS Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -30 (Note 3) Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss (Note 4) td(on) Turn-on Rise Time tr Turn-Off Delay Time VGS=-10V, I D -30 VGS=-4.5V, I D -15A - 18 24 VDS=-5V, I D=-18A - 25 - - 3448 - PF - 508 - PF - 421 - PF - 9.4 - nS VDD=-15V,ID=-15A,R L - 10.2 - nS VGS=-10V,R G 3.3 - 117 - nS 24 - nS - 30 - nC - 10 - nC - 10.4 - VDS=-15V,VGS=0V, F=1.0MHz 电 Turn-on Delay Time VDS=VGS,ID -250 子 On Characteristics VGS=0V ID -250 td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge VDS=-15V,I D=-15A, Qgs Gate-Drain Charge VGS=-4.5V Qgd - S nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) 台 舟 (Note 2) Diode Forward Current VSD VGS=0V,IS =-1A IS - 2 - -1 - -50 V A AONR21357 P-Channel Enhancement Mode MOSFET www.sot23.com.tw 13 200 ID= - 3 0 180 VGS=-7V 140 RD S O N( m Ω -ID Drain Current (A) 12 VGS=-10V 160 11 120 100 10 VGS=-5V 80 VGS=-4.5V 60 VGS=-3V 9 子 40 8 20 0 7 0 1 2 3 4 -VDS Drain-to-Source Voltage (V) 5 4 Fig.1 Typical Output Characteristics 8 10 10 ID= - 1 5 6 TJ=150ć 4 2 0 8 电 8 -VGS Gate to Source Voltage (V) 10 -IS Source Current(A) -VGS (V) Fig.2 On-Resistance v.s Gate-Source 12 TJ=25ć 6 VDS=15V 4 VDS=24V 2 0 0.2 0.4 0.6 0.8 1 0 台 舟 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse 50 100 80 Normalized On Re 1.0 0.5 -50 0 0 60 1.5 0.5 TJ ,Junction Temperature ( ć) 40 2.0 1 -50 20 QG , T o t a l G a t e C h a Fig.4 Gate-Charge Characteristics 1.5 Normalized VGS(th) 6 150 0 50 100 TJ , J u n c t i o n T e m pć) er Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 3 150 AONR21357 P-Channel Enhancement Mode MOSFET www.sot23.com.tw 10000 F=1.0MHz Capacitance (pF) Ciss 1000 Coss Crss 子 100 10 1 5 9 13 17 21 -VDS , Drain to Source Voltage(V) 25 Fig.7 Capacitance Fig.8 Safe Operating Area DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.0001 0.001 台 舟 0.001 0.00001 电 Norm aliz ed Therm al Res pons e (RθJC) 1 0.01 PDM TON T D = TON/T TJpeak = TC + PDM x RθJC 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4 AONR21357 P-Channel Enhancement Mode MOSFET www.sot23.com.tw 台 舟 电 子 PDFN3333 Package Information 5