SIT9120AI-2B2-33E80.000000D 数据手册
SiT9120
Standard Frequency Differential Oscillator
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Features
Applications
31 standard frequencies from 25 MHz to 212.5 MHz
LVPECL and LVDS output signaling types
0.6 ps RMS phase jitter (random) over 12 kHz to 20 MHz bandwidth
Frequency stability as low as ±10 ppm
Industrial and extended commercial temperature ranges
Industry-standard packages: 3.2x2.5, 5.0x3.2 and 7.0x5.0 mmxmm
For any other frequencies between 1 to 625 MHz, refer to SiT9121
and SiT9122 datasheet
10GB Ethernet, SONET, SATA, SAS, Fibre Channel,
PCI-Express
Telecom, networking, instrumentation, storage, servers
Electrical Characteristics
Parameter and Conditions
Symbol
Min.
Typ.
Max.
Unit
Condition
LVPECL and LVDS, Common Electrical Characteristics
Supply Voltage
Output Frequency Range
Frequency Stability
Vdd
f
F_stab
2.97
3.3
3.63
2.25
2.5
2.75
V
V
2.25
–
3.63
V
25
-10
–
–
212.5
+10
MHz
ppm
See last page for list of standard frequencies
-20
–
+20
ppm
-25
–
+25
ppm
Inclusive of initial tolerance, operating temperature, rated power
supply voltage, and load variations
ppm
Termination schemes in Figures 1 and 2 - XX ordering code
-50
–
+50
First Year Aging
F_aging1
-2
–
+2
ppm
25°C
10-year Aging
F_aging10
-5
–
+5
ppm
25°C
Operating Temperature Range
T_use
-40
–
+85
°C
Industrial
-20
–
+70
°C
Extended Commercial
Input Voltage High
VIH
70%
–
–
Vdd
Pin 1, OE or ST
Input Voltage Low
VIL
–
–
30%
Vdd
Pin 1, OE or ST
Input Pull-up Impedance
Z_in
–
100
250
kΩ
Pin 1, OE logic high or logic low, or ST logic high
2
–
–
MΩ
Pin 1, ST logic low
–
6
10
ms
Measured from the time Vdd reaches its rated minimum value.
Start-up Time
Resume Time
Duty Cycle
T_start
T_resume
–
DC
45
6
10
ms
In Standby mode, measured from the time ST pin crosses
50% threshold.
–
55
%
Contact SiTime for tighter duty cycle
LVPECL, DC and AC Characteristics
Current Consumption
Idd
–
61
69
mA
Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current
I_OE
–
–
35
mA
OE = Low
Output Disable Leakage Current
I_leak
–
–
1
A
OE = Low
Standby Current
I_std
–
–
100
A
ST = Low, for all Vdds
I_driver
–
–
30
mA
Maximum average current drawn from OUT+ or OUT-
Output High Voltage
VOH
Vdd-1.1
–
Vdd-0.7
V
See Figure 1(a)
Output Low Voltage
VOL
Vdd-1.9
–
Vdd-1.5
V
See Figure 1(a)
V_Swing
1.2
1.6
2.0
V
See Figure 1(b)
Rise/Fall Time
Tr, Tf
–
300
500
ps
20% to 80%, see Figure 1(a)
OE Enable/Disable Time
RMS Period Jitter
T_oe
T_jitt
RMS Phase Jitter (random)
T_phj
–
–
–
–
–
–
1.2
1.2
1.2
0.6
115
1.7
1.7
1.7
0.85
ns
ps
ps
ps
ps
f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period
f = 100 MHz, VDD = 3.3V or 2.5V
f = 156.25 MHz, VDD = 3.3V or 2.5V
f = 212.5 MHz, VDD = 3.3V or 2.5V
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds
Idd
–
47
55
mA
Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current
I_OE
–
–
35
mA
OE = Low
Differential Output Voltage
VOD
250
350
450
mV
See Figure 2
Maximum Output Current
Output Differential Voltage Swing
LVDS, DC and AC Characteristics
Current Consumption
SiTime Corporation
Rev. 1.06
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised October 3, 2014
SiT9120
Standard Frequency Differential Oscillator
The Smart Timing Choice
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Electrical Characteristics (continued)
Parameter and Conditions
Symbol
Min.
Typ.
Max.
Unit
Condition
LVDS, DC and AC Characteristics (continued)
Output Disable Leakage Current
I_leak
–
–
1
A
Standby Current
I_std
–
–
100
A
ST = Low, for all Vdds
VOD
–
–
50
mV
See Figure 2
VOD Magnitude Change
Offset Voltage
OE = Low
VOS
1.125
1.2
1.375
V
See Figure 2
VOS Magnitude Change
VOS
–
–
50
mV
See Figure 2
Rise/Fall Time
Tr, Tf
–
495
600
ps
20% to 80%, see Figure 2
OE Enable/Disable Time
RMS Period Jitter
T_oe
T_jitt
RMS Phase Jitter (random)
T_phj
–
–
–
–
–
–
1.2
1.2
1.2
0.6
115
1.7
1.7
1.7
0.85
ns
ps
ps
ps
ps
f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period
f = 100 MHz, VDD = 3.3V or 2.5V
f = 156.25 MHz, VDD = 3.3V or 2.5V
f = 212.5 MHz, VDD = 3.3V or 2.5V
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds
Pin Description
Pin
Map
Functionality
OE
Input
H or Open: specified frequency output
L: output is high impedance
ST
Input
H or Open: specified frequency output
L: Device goes to sleep mode. Supply current reduces to
I_std.
OE/ST 1
6
VDD
NC
NA
No Connect; Leave it floating or connect to GND for better
heat dissipation
NC 2
5
OUT-
GND 3
4
OUT+
1
2
3
GND
Power
VDD Power Supply Ground
4
OUT+
Output
Oscillator output
5
OUT-
Output
Complementary oscillator output
6
VDD
Power
Power supply voltage
Top View
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Min.
Max.
Unit
Storage Temperature
Parameter
-65
150
°C
VDD
-0.5
4
V
Electrostatic Discharge (HBM)
–
2000
V
Soldering Temperature (follow standard Pb free soldering guidelines)
–
260
°C
Thermal Consideration
JA, 4 Layer Board
JC, Bottom
7050, 6-pin
142
27
5032, 6-pin
97
20
3225, 6-pin
109
20
Package
(°C/W)
(°C/W)
Environmental Compliance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
MIL-STD-883F, Method 2007
Temperature Cycle
JESD22, Method A104
Solderability
MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
Rev. 1.06
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SiT9120
Standard Frequency Differential Oscillator
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Waveform Diagrams
OUT80%
80%
20%
20%
VOH
OUT+
Tr
VOL
Tf
GND
Figure 1(a). LVPECL Voltage Levels per Differential Pin (OUT+/OUT-)
V _ S w in g
0 V
t
Figure 1(b). LVPECL Voltage Levels Across Differential Pair
OUT80%
80%
VOD
20%
20%
OUT+
VOS
Tr
Tf
GND
Figure 2. LVDS Voltage Levels per Differential Pin (OUT+/OUT-)
Rev. 1.06
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SiT9120
Standard Frequency Differential Oscillator
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Termination Diagrams
LVPECL:
VDD
Z 0 = 50
OUT+
D+
Receiver Device
L V P E C L D rive r
Z0 = 5 0
OUT-
D50
50
V T T = V D D – 2.0 V
Figure 3. LVPECL Typical Termination
VDD= 3.3V => R1 = 100 to 150
VDD= 2.5V => R1 = 75
VDD
OUT+
100 nF
Z0 = 50
D+
Receiver Device
LVPECL Driver
100 nF
Z0 = 50
OUTR1
R1
D50
50
VTT
Figure 4. LVPECL AC Coupled Termination
VDD = 3.3V => R1 = R3 = 133 and
R2 = R4 = 82
VDD = 2.5V => R1 = R3 = 250 and
R2 = R4 = 62.5
VDD
R1
VDD
OUT+
R3
Z0 = 50
D+
Receiver Device
LVPECL Driver
OUT-
Z0 = 50
DR2
R4
Figure 5. LVPECL with Thevenin Typical Termination
Rev. 1.06
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SiT9120
Standard Frequency Differential Oscillator
The Smart Timing Choice
The Smart Timing Choice
LVDS:
VDD
OUT+
Z0 = 50
D+
100
LVDS Driver
OUT-
Z0 = 50
Receiver Device
D-
Figure 6. LVDS Single Termination (Load Terminated)
Rev. 1.06
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SiT9120
Standard Frequency Differential Oscillator
The Smart Timing Choice
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Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[1]
Recommended Land Pattern (Unit: mm)[2]
3.2 x 2.5x 0.75 mm
3.2±0.05
2.20
#4
#2
#3
#4
#6
0.9
#1
#3
#2
1.00
0.7
YXXXX
2 .2 5
#5
1.6
#5
2.5±0.05
#6
#1
0.6
0.75±0.05
0 .6 5
1 .0 5
5.0 x 3.2 x 0.75 mm
#5
#4
#2
#3
#4
#5
#6
1.20
#6
YXXXX
#1
#3
#2
#1
0.75±0.05
7.0 x 5.0x 0.90 mm
7.0±0.10
5.08
#4
5.08
#6
3.80
#3
#3
#2
#1
1.60
#2
#5
1.10
YXXXX
#1
#4
2.60
#5
5.0±0.10
#6
0.90 ±0.10
1.40
1.60
Notes:
1. Top Marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
2. A capacitor of value 0.1 F between Vdd and GND is recommended.
Rev. 1.06
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SiT9120
Standard Frequency Differential Oscillator
The Smart Timing Choice
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Ordering Information
SiT9120AC-1C2-33E125.000000T
Packaging:
“T”, “Y”, “X”, “D”, “E”, or “G”
Refer to table below for
packing method
Leave Blank for Bulk
Part Family
“SiT9120”
Revision Letter
“A” is the revision of Silicon
Frequency
See supported frequency list
below
Temperature Range
“I” Industrial, -40 to 85°C
“C” Extended Commercial, -20 to 70°C
Feature Pin
“E” for Output Enable
“S” for Standby
Signalling Type
“1” = LVPECL
“2” = LVDS
Voltage Supply
Package Size
“B” 3.2 x 2.5 mm x mm
“C” 5.0 x 3.2 mm x mm
“D” 7.0 x 5.0 mm x mm
Frequency Stability
“F” for ±10 ppm
“1” for ±20 ppm
“2” for ±25 ppm
“3” for ±50 ppm
“25” for 2.5V ±10%
“33” for 3.3V ±10%
“XX” for 2.25V to 3.63V
Supported Frequencies
25.000000 MHz
50.000000 MHz
74.175824 MHz
74.250000 MHz
75.000000 MHz
98.304000 MHz
100.000000 MHz
106.250000 MHz
125.000000 MHz
133.000000 MHz
133.300000 MHz
133.330000 MHz
133.333000 MHz
133.333300 MHz
133.333330 MHz
133.333333 MHz
148.351648 MHz
148.500000 MHz
150.000000 MHz
155.520000 MHz
156.250000 MHz
161.132800 MHz
166.000000 MHz
166.600000 MHz
166.660000 MHz
166.666000 MHz
166.666600 MHz
166.666660 MHz
166.666666 MHz
200.000000 MHz
212.500000 MHz
Ordering Codes for Supported Tape & Reel Packing Method
Device Size
8 mm T&R
(3ku)
8 mm T&R
(1ku)
8 mm T&R
(250u)
7.0 x 5.0 mm
–
–
–
–
5.0 x 3.2 mm
–
–
–
T
3.2 x 2.5 mm
D
E
G
T
Y
Rev. 1.06
12 mm T&R
(3ku)
12 mm T&R
(1ku)
Page 7 of 8
12 mm T&R
(250u)
16 mm T&R
(3ku)
16 mm T&R
(1ku)
16 mm T&R
(250u)
–
–
T
Y
X
Y
X
–
–
–
X
–
–
–
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SiT9120
Standard Frequency Differential Oscillator
The Smart Timing Choice
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Revision History
Version
Release Date
1.01
2/20/13
Original
Change Summary
1.02
11/23/13
Added input specifications, LVPECL/LVDS waveforms, packaging T&R options
1.03
2/6/14
1.04
3/3/14
Added ±10 ppm
1.05
7/23/14
Include Thermal Consideration Table
1.06
10/3/14
Modified Thermal Consideration values
Added 8mm T&R option
© SiTime Corporation 2014. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the
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prohibited.
Rev. 1.06
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Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
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(408) 328-4400
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Silicon MEMS Outperforms Quartz
SiTime Corporation
Silicon MEMS Outperforms Quartz Rev. 1.1
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised October 5, 2013
Silicon MEMS Outperforms Quartz
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Best Reliability
Best Electro Magnetic Susceptibility (EMS)
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability
• World-class MEMS and CMOS design expertise
Why is SiTime Best in Class:
• Internal differential architecture for best common mode
noise rejection
• Electrostatically driven MEMS resonator is more immune
to EMS
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
Mean Time Between Failure (Million Hours)
- 30
- 39
500
IDT (Fox)
38
SiTime
20X Better
28
Epson
TXC
16
Pericom
14
Average Spurs (dB)
SiTime
- 40
- 40
- 42
- 43
- 45
- 50
- 60
SiTime
54X Better
- 70
- 73
- 80
- 90
200
0
Kyocera
600
400
Figure 1. Reliability Comparison[1]
Epson
TXC
CW
SiLabs
SiTime
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Aging
Best Power Supply Noise Rejection
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison is shown in Figure 4.
• SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal process, which eliminates foreign particles and improves long term aging and reliability
• Inherently better immunity of electrostatically driven
MEMS resonator
SiTime MEMS vs. Quartz Aging
10
SiTime MEMS Oscillator
Quartz Oscillator
8.0
Aging (±PPM)
8
SiTime
2X Better
6
4
2
0
3.0
3.5
1.5
1-Year
10-Year
Figure 2. Aging Comparison[2]
Silicon MEMS Outperforms Quartz Rev. 1.1
Why is SiTime Best in Class:
• On-chip regulators and internal differential architecture for
common mode noise rejection
• Best analog CMOS design expertise
Additive Integrated Phase Jitter per mVp-p
Injected Noise (ps/mv)
Why is SiTime Best in Class:
Power Supply Noise Rejection
SiTIme
5.0
NDK
Epson
Kyocera
4.0
3.0
2.0
SiTime
SiTime
3X Better
1.0
0.0
10
100
1,000
Power Supply Noise Frequency (kHz)
10,000
Figure 4. Power Supply Noise Rejection[4]
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Silicon MEMS Outperforms Quartz
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Best Vibration Robustness
Best Shock Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
Vibration Sensitivity (ppb/g)
TXC
Epson
Connor Winfield
Kyocera
SiLabs
100.00
10.00
1.00
SiTime
Up to 30x
Better
0.10
10
100
Vibration Frequency (Hz)
Figure 5. Vibration Robustness[5]
1000
Peak Frequency Deviation (PPM)
Vibration Sensitivity vs. Frequency
SiTime
16
14
Differential XO Shock Robustness - 500 g
14.3
12.6
12
10
8
SiTime
Up to 25x
Better
6
3.9
4
2.9
2.5
2
0.6
0
Kyocera
Epson
TXC
CW
SiLabs
SiTime
Figure 6. Shock Robustness[6]
Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5. Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.
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EMI
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