LSGE06R046HWB

LSGE06R046HWB Lonten N-channel 60V, 104A, 4.6mΩ Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using split gate trench DMOS RDS(on),max@ VGS=10V 4.6mΩ technology. This advanced technology has been 104A ID especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and Pin Configuration commutation mode. These devices are well suited for high efficiency fast switching applications. Features  60V,104A, RDS(on),max =4.6mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green device available TO-263 D Applications G  Motor Drives  UPS  DC-DC Converter Pb S N-Channel MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter Symbol Value Unit 60 V 104 A 65 A IDM 312 A Gate-Source voltage VGSS ±20 V Avalanche energy2) EAS 28 mJ Power Dissipation PD 89 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Value Unit Drain-Source Voltage Continuous drain current VDSS ( TC = 25°C ) ID ( TC = 100°C ) Pulsed drain current 1) Thermal Characteristics Parameter Symbol Thermal Resistance, Junction-to-Case RθJC 1.4 °C/W Thermal Resistance Junction-to-Ambient RθJA 55 °C/W Version 1.0,Sep-2020 1 www.lonten.cc LSGE06R046HWB Package Marking and Ordering Information Device Device Package Marking Units/Reel LSGE06R046HWB TO-263 E06R046HWB 800 Electrical Characteristics Parameter TJ = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=250uA 60 --- --- V Gate threshold voltage VGS(th) VDS=VGS, ID=250uA 2.0 3.0 4.0 V Drain-source leakage current IDSS VDS=60 V, VGS=0V --- --- 1 μA Gate leakage current, Forward IGSSF VGS=20 V, VDS=0 V --- --- 100 nA Gate leakage current, Reverse IGSSR VGS=-20 V, VDS=0 V --- --- -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=20 A --- 3.6 4.6 mΩ Forward transconductance gfs VDS =5V , ID=20A --- 66 --- S --- 3511 --- --- 1176 --- --- 67 --- --- 20.3 --- Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr VDD = 30V,VGS=10V, ID = 20A --- 9.6 --- Turn-off delay time td(off) RG=3Ω --- 61 --- Fall time tf --- 15.2 --- Gate resistance Rg --- 1.1 --- --- 15.5 --- --- 9.5 --- --- 48 --- VDS = 30 V, VGS = 0 V, F = 1MHz VGS=0 V,VDS=0 V, F=1MHz pF ns Ω Gate charge characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDS=30V, ID=20A, VGS= 10 V nC Drain-Source diode characteristics and Maximum Ratings Continuous Source Current IS --- --- 74 A Pulsed Source Current3) ISM --- --- 222 A Diode Forward Voltage VSD --- --- 1.2 V Reverse recovery time trr --- 24 --- ns Reverse recovery charge Qrr --- 85 --- nC VGS=0V, IS=20A, TJ=25℃ IF=20A,dIF/dt=100 A/μs Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature. 2: VDD=50V, VGS=10V, L=0.1mH, IAS=24A, Starting TJ=25℃. 3: Pulse Test：Pulse Width ≤300μs, Duty Cycle≤2％. Version 1.0,Sep-2020 2 www.lonten.cc LSGE06R046HWB Electrical Characteristics Diagrams Figure 1. Typ. Output Characteristics Figure 2. Transfer Characteristics T=125°C T=25°C Gate−source voltage VGS (V) Figure 3. Capacitance Characteristics Figure 4. Gate Charge Waveform Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 5. Body-Diode Characteristics Figure 6. Rdson-Drain Current VGS = 10V Drain Current ID (A) Version 1.0,Sep-2020 3 www.lonten.cc LSGE06R046HWB Figure 7. Rdson-Junction Temperature Figure 8. VGS(th)-Junction Temperature Figure 9. On-Resistance vs. Gate-to-Source voltage Figure 11. Normalized Maximum Transient Thermal Impedance (RthJC) Transient Thermal Resistance ZJC(normalized) 1 0.7 0.5 0.3 0.1 R θJC = 1.4 ℃/W 0.1 0.05 0.01 0.02 0.01 single pulse 1E-3 PD Ton 1E-4 1E-6 1E-5 1E-4 1E-3 0.01 T 0.1 t,Time (s) Version 1.0,Sep-2020 4 www.lonten.cc LSGE06R046HWB Test Circuit & Waveform Version 1.0,Sep-2020 5 www.lonten.cc LSGE06R046HWB Mechanical Dimensions for TO-263 DIMENSIONS IN MILLITMETERS DIMENSIONS IN INCHES SYMBOL MIN MAX MIN MAX A 4.36 4.8 0.172 0.189 A1 1.19 1.42 0.047 0.056 A2 2.2 2.96 0.087 0.117 A3 0 0.25 0 0.010 b 0.7 0.96 0.028 0.038 b1 1.17 1.47 0.046 0.058 c 0.3 0.69 0.012 0.027 D1 8.5 9.5 0.335 0.374 D4 6.6 - 0.260 - E 9.8 10.55 0.386 0.415 E5 7.06 8.7 0.278 0.343 e 2.54BSC 0.1BSC H 14.7 15.7 0.579 0.618 H2 0.95 1.65 0.037 0.065 L 1.9 2.8 0.075 0.110 L1 - 1.78 - 0.070 L4 θ Version 1.0,Sep-2020 0.25BSC 0° 9° 0.01BSC 0° 9° 6 www.lonten.cc LSGE06R046HWB Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 1.0,Sep-2020 7 www.lonten.cc