LSB80R680GT/LSC80R680GT/LSD80R680GT/LSE80R680GT/
LSF80R680GT/LSG80R680GT/LSH80R680GT
LonFET
Lonten N-channel 800V, 8A, 0.68Ω LonFETTM Power MOSFET
Description
Product Summary
LonFET
VDS @ Tj,max
850V
RDS(on),max
0.68Ω
device has extremely low on resistance, making it
IDM
8A
especially suitable for applications which require
Qg,typ
19.5nC
TM
Power MOSFET is fabricated using
advanced super junction technology.
The resulting
superior power density and outstanding efficiency.
Features
Ultra low RDS(on)
Ultra low gate charge (typ. Qg = 19.5nC)
100% UIS tested
RoHS compliant
TO-220
TO-220MF
TO-263
TO-262
D
Applications
TO-252
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
TO-251
G
S
TO-247
Pb
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
Symbol
Value
Unit
800
V
8
A
5
A
24
A
VGSS
±30
V
EAS
235
mJ
IAR
8
A
VDSS
( TC = 25°C )
ID
( TC = 100°C )
Pulsed drain current
IDM
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche current, repetitive 3)
Power Dissipation TO-220MF ( TC = 25°C )
- Derate above 25°C
Power Dissipation TO-220/TO-252/TO-263/TO-247
31
W
0.25
W/°C
PD
( TC = 25°C )
- Derate above 25°C
83
W
0.66
W/°C
-55 to +150
°C
Operating and Storage Temperature Range
TJ, TSTG
Continuous diode forward current
IS
8
A
Diode pulse current
IS,pulse
24
A
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Thermal Characteristics TO-220/TO-252/TO-263/TO-247
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
RθJC
1.5
°C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62
°C/W
Tsold
260
°C
Value
Unit
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
Thermal Characteristics TO-220MF
Parameter
Symbol
Thermal Resistance, Junction-to-Case
RθJC
4
°C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
°C/W
Tsold
260
°C
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
Package Marking and Ordering Information
Device
Device Package
Marking
Units/Tube
LSC80R680GT
TO-220
LSC80R680GT
50
LSD80R680GT
TO-220MF
LSD80R680GT
50
LSE80R680GT
TO-263
LSE80R680GT
LSF80R680GT
TO-262
LSF80R680GT
LSG80R680GT
TO-252
LSG80R680GT
LSH80R680GT
TO-251
LSH80R680GT
72
LSB80R680GT
TO-247
LSB80R680GT
30
Electrical Characteristics
Parameter
Units/Reel
800
50
2500
Tc = 25°C unless otherwise noted
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static characteristics
Drain-source breakdown voltage
BVDSS
VGS=0 V, ID=0.25 mA
800
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS, ID=0.25mA
2.5
3.5
4.5
V
Drain cut-off current
IDSS
VDS=800 V, VGS=0 V,
μA
Tj = 25°C
-
-
1
Tj = 125°C
-
10
-
Gate leakage current, Forward
IGSSF
VGS=30 V, VDS=0 V
-
-
100
nA
Gate leakage current, Reverse
IGSSR
VGS=-30 V, VDS=0 V
-
-
-100
nA
Drain-source on-state resistance
RDS(on)
VGS=10 V, ID=4 A
-
Tj = 25°C
-
0.58
0.68
Ω
Tj = 150°C
-
1.5
-
Gate resistance
RG
f=1 MHz, open drain
-
7.6
-
Input capacitance
Ciss
VDS = 100 V, VGS = 0 V,
-
873
-
Output capacitance
Coss
f = 250 kHz
-
26
-
Ω
Dynamic characteristics
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Reverse transfer capacitance
Crss
-
2.54
-
Turn-on delay time
td(on)
-
12
-
Rise time
tr
VDD = 400V, ID = 4A
-
30
-
Turn-off delay time
td(off)
RG = 10Ω, VGS=10V
-
60
-
Fall time
tf
-
15
Gate to source charge
Qgs
-
4.5
-
Gate to drain charge
Qgd
VDD=640 V, ID=4A,
-
7.2
-
Gate charge total
Qg
VGS=0 to 10 V
-
19.5
-
-
5
-
V
-
-
1.4
V
-
245
-
ns
-
2.33
-
μC
-
19
-
A
ns
-
Gate charge characteristics
Vplateau
nC
Reverse diode characteristics
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
VGS=0 V, IF=4A
VR=400 V, IF=4A,
dIF/dt=100 A/μs
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. IAS = 2.8A, VDD = 60V, Starting Tj= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
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LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Common Source
VDS=20 V
Pulse test
VGS=10V
VGS=7V
Common Source
Tc = 25°C
Pulse test
TC=25℃
VGS=6.5V
TC=125℃
VGS=6V
VGS=5.5V
Drain−source voltage VDS (V)
Gate−source voltage VGS (V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperatur
VGS = 10V
IDS=0.25 mA
Pulse test
Tc = 25°C
Pulse test
Drain current ID (A)
Junction temperature Tj (°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
VGS=0 V
IDS=0.25 mA
Pulse test
VGS=10 V
IDS=3.5 A
Pulse test
Junction temperature Tj (°C)
Version 1.3,Apr-2020
Junction temperature Tj (°C)
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Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characterist
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes:
f = 250 kHz
VGS=0 V
VDS=640 V
IDS = 4A
Ciss
Coss
Crss
Drain-Source Voltage VDS (V)
Total Gate Charge QG (nC)
Figure 9.1 Maximum Safe Operating Area
Figure 9.2 Maximum Safe Operating Area
TO-220MF
TO-220/TO-252/TO-263/TO-247
100us10us
10us
1ms
100us
1ms
Limited by Rdson
Limited by Rdson
DC
Drain-Source Voltage VDS (V)
DC
Drain-Source Voltage VDS (V)
Figure 10.1 Power Dissipation vs. Temperature
Figure 10.2 Power Dissipation vs. Temperature
TO-220MF
TO-220/TO-252/TO-263/TO-247
Case temperature Tc (°C)
Case temperature Tc (°C)
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Gate Charge Test Circuit & Waveform
Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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LonFET
Mechanical Dimensions for TO-220
COMMON DIMENSIONS
SYMBOL
MM
INCH
MIN
NOM
MAX
MIN
NOM
MAX
A
4.37
4.57
4.70
0.172
0.180
0.185
A1
1.25
1.30
1.40
0.049
0.051
0.055
A2
2.20
2.40
2.60
0.087
0.094
0.102
b
0.70
0.80
0.95
0.028
0.031
0.037
b2
1.17
1.27
1.47
0.046
0.050
0.058
c
0.45
0.50
0.60
0.018
0.020
0.024
D
15.10
15.60
16.10
0.594
0.614
0.634
D1
8.80
9.10
9.40
0.346
0.358
0.370
D2
5.50
—
—
0.217
—
—
E
9.70
10.00
10.30
0.382
0.394
0.406
E3
7.00
—
—
0.276
—
—
e
2.54BSC
0.1BSC
e1
5.08BSC
0.2BSC
H1
6.25
6.50
6.85
0.246
0.256
0.270
L
12.75
13.50
13.80
0.502
0.531
0.543
L1
—
3.10
3.40
—
0.122
0.134
Øp
3.40
3.60
3.80
0.134
0.142
0.150
Q
2.60
2.80
3.00
0.102
0.110
0.118
TO-220 Part Marking Information
Lonten Logo
Lonten
LSC80R680GT
“AB”
Foundry & Assembly Code
ABYWW99
Part Number
“99”
Manufacturing Code
“YWW”
Date Code
Version 1.3,Apr-2020
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LonFET
Mechanical Dimensions for TO-220MF
COMMON DIMENSIONS
SYMBOL
MM
INCH
MIN
NOM
MAX
MIN
NO
MA
E
9.96
10.1
10.3
0.39
0.40
0.40
A
4.50
4.70
4.90
0.17
0.18
0.19
A1
2.34
2.54
2.74
0.09
0.10
0.10
A2
0.30
0.45
0.60
0.01
0.00
0.02
A4
2.65
2.76
2.96
0.10
0.10
0.11
C
0.40
0.50
0.65
0.01
0.02
0.02
D
15.57
15.8
16.1
0.61
0.62
0.63
H1
6.70REF
e
0.264REF
2.54BSC
0.1BSC
ØP
3.03
3.18
3.38
0.11
0.12
0.13
L
12.68
12.9
13.2
0.49
0.51
0.52
L1
2.88
3.03
3.18
0.11
0.11
0.12
ØP3
3.15REF
0.124REF
F3
3.15
3.30
3.45
0.12
0.13
0.13
G3
1.25
1.35
1.55
0.04
0.05
0.06
b1
1.18
1.28
1.43
0.04
0.05
0.05
b2
0.70
0.80
0.95
0.02
0.03
0.03
TO-220MF Part Marking Information
Lonten Logo
“AB”
Foundry & Assembly Code
“YWW”
Date Code
Version 1.3,Apr-2020
Lonten
LSD80R680GT
ABYWW99
Part Number
“99”
Manufacturing Code
8
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LonFET
Mechanical Dimensions for TO-251
COMMON DIMENSIONS
SYMBOL
MM
MIN
NOM
MAX
A
2.20
2.30
2.38
A2
0.97
1.07
1.17
b
0.68
0.78
0.90
b2
0.00
0.04
0.10
b2’
0.00
0.04
0.10
b3
5.20
5.33
5.46
c
0.43
0.53
0.61
D
5.98
6.10
6.22
D1
5.30REF
E
6.40
6.60
6.73
E1
4.63
—
—
e
2.286BSC
H
16.22
16.52
16.82
L1
9.15
9.40
9.65
L3
0.88
1.02
1.28
L5
1.65
1.80
1.95
TO-251 Part Marking Information
Lonten Logo
“AB”
Foundry & Assembly Code
Lonten
LSH80R680GT
ABYWW99
Part Number
“99”
Manufacturing Code
“YWW”
Date Code
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Mechanical Dimensions for TO-252
COMMON DIMENSIONS
SYMBOL
mm
MIN
NOM
MAX
A
2.20
2.30
2.38
A1
0.00
—
0.20
A2
0.97
1.07
1.17
b
0.68
0.78
0.90
b3
5.20
5.33
5.46
c
0.43
0.53
0.61
D
5.98
6.10
6.22
D1
5.30REF
E
6.40
E1
4.63
e
6.60
6.73
—
—
2.286BSC
H
9.40
L
1.38
10.10
10.50
1.50
1.75
L1
2.90REF
L2
0.51BSC
L3
0.88
—
1.28
L4
0.50
—
1.00
L5
1.65
1.80
1.95
θ
0°
—
8°
TO-252 Part Marking Information
Lonten Logo
“AB”
Foundry & Assembly Code
Lonten
LSG80R680GT
ABYWW99
Part Number
“99”
Manufacturing Code
“YWW”
Date Code
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LonFET
Mechanical Dimensions for TO-263
COMMON DIMENSIONS
SYMBOL
MM
INCH
MIN
NOM
MAX
MIN
NOM
MAX
A
4.37
4.57
4.77
0.172
0.180
0.188
A1
1.22
1.27
1.42
0.048
0.050
0.056
A2
2.49
2.89
2.89
0.098
0.114
0.114
A3
0.00
0.13
0.25
0.000
0.005
0.010
b
0.70
0.81
0.96
0.028
0.032
0.034
b1
1.17
1.27
1.47
0.046
0.050
0.058
c
0.30
0.38
0.53
0.012
0.015
0.021
D1
8.50
8.70
8.90
0.335
0.343
0.350
D4
6.60
—
—
0.260
—
—
E
9.86
10.16
10.36
0.389
0.400
0.408
E5
7.06
—
—
0.278
—
—
e
2.54 BSC
0.100 BSC
H
14.70
15.10
15.50
0.579
0.594
0.610
H2
1.07
1.27
1.47
0.042
0.050
0.058
L
2.00
2.30
2.60
0.079
0.091
0.102
L1
1.40
1.55
1.70
0.055
0.061
0.067
L4
θ
0.25 BSC
0°
5°
0.010 BSC
9°
0°
0.197°
0.354°
TO-263 Part Marking Information
Lonten Logo
“AB”
Foundry & Assembly Code
“YWW”
Date Code
Version 1.3,Apr-2020
Lonten
LSE80R680GT
ABYWW99
Part Number
“99”
Manufacturing Code
11
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LonFET
Mechanical Dimensions for TO-262
TO-262 Part Marking Information
Lonten Logo
“AB”
Foundry & Assembly Code
“YWW”
Date Code
Version 1.3,Apr-2020
Lonten
LSF80R680GT
ABYWW99
Part Number
“99”
Manufacturing Code
12
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LSB80R680GT/LSC80R680GT/LSD80R680GT/LSE80R680GT/
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LonFET
Mechanical Dimensions for TO-247
SYMBOL
mm
MIN
NOM
MAX
A
4.80
5.00
5.20
A1
2.21
2.41
2.59
A2
1.85
2.00
2.15
b
1.11
1.21
1.36
b2
1.91
2.01
2.21
b4
2.91
3.01
3.21
c
0.51
0.61
0.75
D
20.80
21.00
21.30
D1
16.25
16.55
16.85
E
15.50
15.80
16.10
E1
13.00
13.30
13.60
E2
4.80
5.00
5.20
E3
2.30
2.50
2.70
e
5.44BSC
L
19.82
19.92
20.22
L1
—
—
4.30
ØP
3.40
3.60
3.80
ØP1
—
—
7.30
S
6.15BSC
TO-247 Part Marking Information
Lonten Logo
“AB”
Foundry & Assembly Code
Lonten
LSB80R680GT
ABYWW99
Part Number
“99”
Manufacturing Code
“YWW”
Date Code
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LonFET
Disclaimer
The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The
information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account when
designing circuits for mass production.
LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of the Products or technical information described in this document.
The Products are not designed or manufactured to be used with any equipment, device or system which requires
an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or
create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery,
nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way
for use of any of the Products for the above special purposes.
Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use
conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury,
and injury or damage caused by fire in the event of the failure of a LONTEN product.
The content specified herein is subject to change for improvement without notice. When using a LONTEN product,
be sure to obtain the latest specifications.
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