HSH250N10

HSH250N10 N-Ch 100V Fast Switching MOSFETs General Description ⚫ ⚫ ⚫ ⚫ Product Summary 100% EAS Guaranteed Green Device Available Super Low RDS(ON) Advanced high cell density Trench technology 100 V RDS(ON),typ 1.9 mΩ ID 250 A TO263 Pin Configuration Applications ⚫ ⚫ ⚫ VDS MOTOR Driver. BMS. High frequency switching and synchronous rectification. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20/-12 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 250 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 158 A IDM Pulsed Drain Current2 1000 A EAS Single Pulse Avalanche Energy3 940 mJ IAS Avalanche Current 135 A 411 W PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 0.3 ℃/W www.hs-semi.cn Ver 2.0 Typ. 1 HSH250N10 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage On-Resistance2 RDS(ON) Static Drain-Source VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 100 --- --- V VGS=10V , ID=40A --- 1.9 2.3 m VGS=VDS , ID =250uA 2.0 3.0 4.0 V VDS=100V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=3A --- 20 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.1 ---  --- 195 --- --- 21 --- --- 30 --- Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time VDS=50V , VGS=10V , ID=10A --- 21 --- VDD=50V , VGS=10V , RG=3.3, --- 21 --- ID=1A --- 69 --- nC ns Td(off) Turn-Off Delay Time Tf Fall Time --- 120 --- Ciss Input Capacitance --- 10150 --- Coss Output Capacitance --- 2100 --- Crss Reverse Transfer Capacitance --- 55 --- Min. Typ. Max. Unit VDS=50V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS Parameter Conditions VG=VD=0V , Force Current --- --- 250 A Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , --- 95 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 670 --- nC VSD Continuous Source Current1,5 Diode Forward Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=0.1mH,Rg=25,IAS=138A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. 6.Package limitation current. www.hs-semi.cn Ver 2.0 2 HSH250N10 N-Ch 100V Fast Switching MOSFETs Typical Characteristics Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Fig.3 Normalized Vth vs. Tj Fig.4 Gate Charge Characteristics Fig.5 Normalized Transient Impedance www.hs-semi.cn Fig.6 Maximum Safe Operation Area Ver 2.0 3 HSH250N10 N-Ch 100V Fast Switching MOSFETs EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.7 Switching Time Waveform www.hs-semi.cn Fig.8 Unclamped Inductive Switching Waveform Ver 2.0 4 HSH250N10 N-Ch 100V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5