HSH6115

HSH6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6115 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSH6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS -60 V RDS(ON),max 25 mΩ ID -45 A TO263 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ±20 V Continuous Drain Current1 -45 A Continuous Drain Current1 -34 A IDM Pulsed Drain Current2 -90 A EAS Single Pulse Avalanche Energy3 113 mJ IAS Avalanche Current -47.6 A 86.8 W PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 62 ℃/W --- 1.44 ℃/W 1 HSH6115 P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V VGS=-10V , ID=-18A --- --- 25 VGS=-4.5V , ID=-12A --- --- 33 VGS=VDS , ID =-250uA -1.0 --- -2.5 VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 m V uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-18A --- 23 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 7 14  Qg Total Gate Charge (-4.5V) --- 25 --- Qgs Gate-Source Charge --- 6.7 --- Qgd Gate-Drain Charge --- 5.5 --- Td(on) Turn-On Delay Time VDS=-20V , VGS=-4.5V , ID=-12A nC --- 38 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3, --- 23.6 --- Turn-Off Delay Time ID=-1A --- 100 --- Fall Time --- 6.8 --- Ciss Input Capacitance --- 3635 --- Coss Output Capacitance --- 224 --- Crss Reverse Transfer Capacitance --- 141 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- -45 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current1,5 Diode Forward Voltage2 Conditions Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-47.6A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSH6115 P-Ch 60V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 12 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-12A 8 6 4 2 0 0 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Source Drain Forward Characteristics 40 60 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 20 QG , Total Gate Charge (nC) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSH6115 P-Ch 60V Fast Switching MOSFETs 10000 100.00 F=1.0MHz 100us Ciss Capacitance (pF) 10.00 1ms 10ms 100ms DC -ID (A) 1000 1.00 Coss 100 Crss 0.10 Tc=25o C Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 Fig.7 Capacitance 1 10 -VDS (V) 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM T 0.02 0.01 0.01 0.00001 TON D = TON/T TJpeak = TC + PDM x RθJC SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Waveform Ver 2.0 4 HSH6115 P-Ch 60V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5