IPB120N06NG-VB

IPB120N06NG www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS 60 RDS(on) VGS = 10 V 11 V mΩ RDS(on) VGS = 4.5 V 12 mΩ ID 75 • 175 °C Junction Temperature • TrenchFET® Power MOSFET A Single Configuration D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V 75 ID 50a IDM Pulsed Drain Current 200 Continuous Source Current (Diode Conduction) IS 50 Avalanche Current IAS 50 EAS 125 Single Avalanche Energy (Duty Cycle  1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C mJ 136 PD W 3b, 8.3b, c TJ, Tstg Operating Junction and Storage Temperature Range A a - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Symbol t  10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t  10 s. 服务热线：400-655-8788 1 IPB120N06NG www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb VDS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 1 IDSS ID(on) RDS(on) Forward Transconductanceb Dynamic gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Gate-Drain Chargec Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Qgs VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 175 °C 250 VDS =5 V, VGS = 10 V µA A VGS = 10 V, ID = 20 A 0.011 0.016 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.020 VGS = 4.5 V, ID = 15 A 0.012 VDS = 15 V, ID = 20 A 60  S 4300 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 470 225 47 VDS = 30 V, VGS = 10 V, ID = 50 A nC 10 12 td(on) td(off) nA 60 VGS = 10 V, ID = 20 A, TJ = 125 °C Qgd tr V 3 VDD = 30 V, RL = 0.6  ID  50 A, VGEN = 10 V, Rg = 2.5  tf 10 20 15 25 35 50 20 30 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) A Pulsed Current ISM Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1 1.5 V Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/µs 45 100 ns 60 Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IPB120N06NG www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C unless noted) 100 200 VGS = 10 thru 5 V 80 4V I D - Drain Current (A) I D - Drain Current (A) 160 120 80 60 40 TC = 125 °C 20 40 25 °C 2 V, 3 V 0 0 0 2 4 6 8 10 - 55 °C 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 120 5 0.015 TC = - 55 °C 0.012 25 °C VGS = 10 V 80 0.009 125 °C 60 0.006 R DS(on) - g fs - Transconductance (S) 100 40 0.003 20 0 0 10 20 30 I D - Drain Current (A) 40 50 0.000 0 45 85 40 50 RDS(on) vs. Drain Current 10 4000 3000 VGS - Gate-to-Source Voltage (V) 3500 C - Capacitance (pF) 75 65 ID - Drain Current (A) Transconductance Ciss 2500 2000 1500 1000 Coss 500 0 55 Crss 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance 60 VDS = 30 V ID = 50 A 8 6 4 2 0 0 10 20 30 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 IPB120N06NG www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C unless noted) 100 2.0 VGS = 10 V ID = 20 A I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 服务热线：400-655-8788 4 IPB120N06NG www.VBsemi.com THERMAL RATINGS 1000 60 Limited by RDS(on)* 100 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 0.1 10 0 10 µs 100 µs 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 175 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 IPB120N06NG www.VBsemi.com TO-263AB (HIGH VOLTAGE) A (Datum A) 3 4 L1 A 4 E A B c2 H Gauge plane 4 0° to 8° D 1 L2 B 2 C 3 C H 5 B Detail A Seating plane L L3 A1 L4 Detail “A” Rotated 90° CW scale 8:1 B A 2 x b2 c 2xb 0.010 M A M B E ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. 4 E1 Section B - B and C - C Scale: none View A - A INCHES MILLIMETERS MAX. MIN. MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 服务热线：400-655-8788 6 IPB120N06NG www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 IPB120N06NG www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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