IRFZ48NS-VB

IRFZ48NS www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A)a 0.012 at VGS = 10 V 60 0.013 at VGS = 4.5 V 50 • 175 °C Junction Temperature • TrenchFET® Power MOSFET D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V 60 ID 50a IDM Pulsed Drain Current 200 Continuous Source Current (Diode Conduction) IS 50 Avalanche Current IAS 50 EAS 125 Single Avalanche Energy (Duty Cycle  1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C mJ 136 PD W 3b, 8.3b, c TJ, Tstg Operating Junction and Storage Temperature Range A a - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Symbol t  10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t  10 s. 1 IRFZ48NS www.VBsemi.tw SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Typ.a Max. 2 3 Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage ± 100 VDS = 60 V, VGS = 0 V, TJ = 175 °C On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb b Forward Transconductance Dynamic RDS(on) gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs 0.012 0.016 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.020 VGS = 4.5 V, ID = 15 A 0.013 60 2650 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 470 225 47 VDS = 30 V, VGS = 10 V, ID = 50 A 70 nC 10 12 Turn-On Delay Timec td(on) 10 20 15 25 35 50 20 30 Rise Turn-Off Delay Timec Fall Timec td(off)  S Qgd tr µA A 0.010 Gate-Drain Chargec Timec nA 250 60 VGS = 10 V, ID = 20 A, TJ = 125 °C VDS = 15 V, ID = 20 A V VDD = 30 V, RL = 0.6  ID  50 A, VGEN = 10 V, Rg = 2.5  tf ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) 60 A Pulsed Current ISM Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1 1.5 V Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/µs 45 100 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 IRFZ48NS www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C unless noted) 100 200 VGS = 10 thru 5 V 80 4V I D - Drain Current (A) I D - Drain Current (A) 160 120 80 60 40 TC = 125 °C 20 40 25 °C 2 V, 3 V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 120 5 0.015 TC = - 55 °C 0.012 VGS = 4.5 V 25 °C 0.009 125 °C 60 40 20 0 0.006 0.003 0.000 0 10 20 30 I D - Drain Current (A) 40 0 50 20 40 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 4000 VGS - Gate-to-Source Voltage (V) 3500 3000 C - Capacitance (pF) VGS = 10 V 80 R DS(on) - g fs - Transconductance (S) 100 Ciss 2500 2000 1500 1000 Coss VDS = 30 V ID = 50 A 8 6 4 2 500 Crss 0 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance 60 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge 3 IRFZ48NS www.VBsemi.tw TYPICAL CHARACTERISTICS (25 °C unless noted) 100 VGS = 10 V ID = 20 A 2.0 I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 175 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 4 IRFZ48NS www.VBsemi.tw THERMAL RATINGS 1000 60 Limited by RDS(on)* 100 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 µs 100 µs 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 0.1 10 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 175 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 5 IRFZ48NS www.VBsemi.tw TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 B A1 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS 4 E1 Section B - B and C - C Scale: none View A - A INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 - b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 2.54 BSC 15.88 0.575 0.100 BSC 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 6 IRFZ48NS www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 (16.129) 0.635 (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 7 IRFZ48NS www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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