IRF9Z24NS-VB

IRF9Z24NS www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () Max. ID (A) 0.048at VGS = - 10 V - 35 0.060at VGS = - 4.5 V - 30 Qg (Typ.) 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS S • Power Switch • Load Switch in High Current Applications • DC/DC Converters D2PAK (TO-263) G G D D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc ID Unit V - 35 - 30 IDM - 100 IAS - 32 EAS 51 A mJ b PD 61 6.1 W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 60 Junction-to-Case (Drain) RthJC 3 °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). 服务热线：400-655-8788 1 IRF9Z24NS www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 2.5 ± 250 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 250 VDS - 10 V, VGS = - 10 V ID(on) RDS(on) gfs - 30 V nA µA A VGS = - 10 V, ID = - 14 A 0.048 VGS = - 4.5 V, ID = - 12 A 0.060 VDS = - 20 V, ID = - 14 A 40  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec 200 67 VDS = - 30V , VGS = - 10 V, ID = - 14 A Rise Timec Fall Timec f = 1 MHz td(on) tr c td(off) nC 13.5 14 Rg Turn-On Delay Timec pF 120 Qgd Gate Resistance Turn-Off Delay Time 1650 VGS = 0 V, VDS = - 30 V, f = 1 MHz VDD = - 30 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.5 2.5 5 10 20 11 20 42 63 12 20 - 35 Pulsed Current ISM - 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 10 A, VGS = 0 V - 0.8 IF = - 10 A, dI/dt = 100 A/µs 40 trr IRM(REC) Qrr ns b IS Continuous Current  A - 1.5 V 38 57 ns 2.3 3.5 A 60 nC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IRF9Z24NS www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 0.100 VGS = 10 V thru 4 V 0.080 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 30 20 10 VGS = 3 V VGS = 4.5 V 0.060 VGS = 10 V 0.040 0.020 0.000 0 0 1 0.5 1.5 0 2 20 40 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Output Characteristics 80 100 On-Resistance vs. Drain Current 1.0 0.040 ID = 14 A 0.034 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 0.8 0.6 TC = 25 °C 0.4 0.2 TC = 125 °C TC = - 55 °C 2 1 0.016 3 4 0.010 5 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 50 10 TC = 25 °C ID = 14 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C 40 g fs - Transconductance (S) TJ = 125 °C 0.022 TJ = 25 °C 0 0 0.028 30 TC = 125 °C 20 10 8 VDS = 30 V 6 VDS =25 V 4 VDS = 48 V 2 0 0 0 6 12 18 ID - Drain Current (A) Transconductance 24 30 0 14 28 42 56 70 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 IRF9Z24NS www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.3 100 ID = 250 μA VGS(th) (V) IS - Source Current (A) 2.0 TJ = 150 °C 10 1.7 TJ = 25 °C 1 1.4 1.1 - 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 25 0 25 50 75 100 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 125 150 125 150 51 2000 VDS (V) Drain-to-Source Voltage ID = 250 μA C - Capacitance (pF) 1600 Ciss 1200 800 400 Coss 49 47 45 Crss 43 - 50 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) 40 - 25 0 25 50 75 100 TJ - Temperature (°C) Drain Source Breakdown vs. Junction Temperature Capacitance 2.2 40 VGS = 10 V 1.9 30 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) ID = 14 A 1.6 VGS = 4.5 V 1.3 20 10 1.0 0.7 - 50 0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 0 25 50 75 100 TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 150 服务热线：400-655-8788 4 IRF9Z24NS www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 IDAV (A) TJ = 150 °C ID - Drain Current (A) 100 TJ = 25 °C 10 100 μs 10 1 ms Limited by R DS(on)* 10 ms DC, 1 s, 100 ms 1 0.1 1 0.000001 TC = 25 °C Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 0.1 Time (s) Single Pulse Avalanche Current Capability vs. Time BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 IRF9Z24NS www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 6 IRF9Z24NS www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.