VBL165R10

VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY 650 VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • 0.77 VGS = 10 V Qg max. (nC) 43 Qgs (nC) 5 22 Qgd (nC) Configuration Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Available RoHS APPLICATIONS Single • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial TO-220AB TO-220 FULLPAK D D2PAK (TO-263) G G D S G D S G D S S Top View N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ± 30 ID 10 8.0 A IDM 40 3.2 W/°C Single Pulse Avalanche Energy b EAS mJ Maximum Power Dissipation PD 280 167/52 -55 to +150 15 °C Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ, Tstg TJ = 125 °C Reverse Diode dV/dt d Soldering Recommendations (Peak Temperature) c for 10 s dV/dt UNIT V W 4.1 V/ns 300 °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.5 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. 1 服务热线：400-655-8788 VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 60 Maximum Junction-to-Case (Drain) RthJC - 0.8 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 650 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.75 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 650 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 10 - 0.77 - Ω - S Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8 A gfs VDS = 30 V, ID = 8 A - 16 Input Capacitance Ciss 2350 - Coss - 70 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output Capacitance - 8 - Effective Output Capacitance, Energy Related a Co(er) - 63 - Effective Output Capacitance, Time Related b Co(tr) - 213 - - 43 - - 5 - - 22 25 Forward Transconductance μA Dynamic pF VDS = 0 V to 520 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) - 13 tr VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω - 11 35 - 81 90 - 25 40 f = 1 MHz, open drain - 3.5 - - - 15 Rise Time Turn-Off Delay Time td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V ID = 8 A, VDS = 520 V nC ns Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 8 A, VGS = 0 V TJ = 25 °C, IF = IS = 8 A, dI/dt = 100 A/μs, VR = 400 V S - - 40 - - 1.5 V - 345 - ns - 4.5 - μC - 35 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 % to 80 % VDSS. 服务热线：400-655-8788 2 VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 40 30 ID = 8 A TJ = 25 °C RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 50 20 10 2.5 2 1.5 1 VGS = 10 V 0.5 0 - 60 - 40 - 20 0 0 0 10 15 20 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 10 000 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V BOTTOM 6 V 20 30 VDS, Drain-to-Source Voltage (V) TOP 25 25 TJ = 150 °C Ciss Capacitance (pF) ID, Drain-to-Source Current (A) 30 5 15 10 1000 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Coss 100 ġ Crss 10 ġ 5 5V 1 0 0 5 10 15 20 25 30 0 VDS, Drain-to-Source Voltage (V) 400 300 500 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 50 24 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) 200 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics 40 30 20 TJ = 25 °C 10 TJ = 150 °C VDS = 30.8 V VDS = 520 V VDS = 325 V VDS = 130 V 20 16 12 8 4 0 0 0 3 100 5 10 15 20 25 0 20 40 60 80 100 VGS, Gate-to-Source Voltage (V) Qg, Total Gate Charge (nC) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 服务热线：400-655-8788 VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com 20 ISD, Reverse Drain Current (A) 100 ID, Drain Current (A) TJ = 150 °C TJ = 25 °C 10 1 15 10 5 VGS = 0 V 0 0.1 0.2 0.6 0.4 0.8 1 1.2 1.4 25 1.6 VSD, Source-Drain Voltage (V) 100 125 150 TJ, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 800 1000 Operation in this Area Limited by RDS(on) 775 IDM = Limited 10 100 μs Limited by RDS(on)* 1 1 ms 0.1 TC = 25 °C TJ = 150 °C Single Pulse BVDSS Limited 10 ms VDS, Drain-to-Source Breakdown Voltage (V) 100 ID, Drain Current (A) 75 50 725 700 675 650 625 0.01 600 - 60 - 40 - 20 0 1 10 100 1000 VDS - Drain -to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 8 - Maximum Safe Operating Area Normalized Effective Transient Thermal Impedance 750 Fig. 10 - Temperature vs. Drain-to-Source Voltage 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 4 VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com RD VDS QG 10 V VGS D.U.T. RG QGS + - VDD QGD VG 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Charge Fig. 12 - Switching Time Test Circuit Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. VDS 90 % 50 kΩ 12 V 0.2 µF 0.3 µF + 10 % VGS D.U.T. td(on) td(off) tf tr - VDS VGS 3 mA Fig. 13 - Switching Time Waveforms IG ID Current sampling resistors L Vary tp to obtain required IAS Fig. 17 - Gate Charge Test Circuit VDS D.U.T RG + - IAS V DD 10 V 0.01 Ω tp Fig. 14 - Unclamped Inductive Test Circuit VDS tp VDD VDS IAS Fig. 15 - Unclamped Inductive Waveforms 5 服务热线：400-655-8788 VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 18 - For N-Channel 服务热线：400-655-8788 6 VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) 7 服务热线：400-655-8788 VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com TO-220 FULLPAK (HIGH VOLTAGE) A E A1 ØP n d1 d3 D u L1 V L b3 A2 b2 c b e MILLIMETERS DIM. A A1 A2 b b2 b3 c D d1 d3 E e L L1 n ØP u v ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 MIN. 4.570 2.570 2.510 0.622 1.229 1.229 0.440 8.650 15.88 12.300 10.360 INCHES MAX. 4.830 2.830 2.850 0.890 1.400 1.400 0.629 9.800 16.120 12.920 10.630 MIN. 0.180 0.101 0.099 0.024 0.048 0.048 0.017 0.341 0.622 0.484 0.408 13.730 3.500 6.150 3.450 2.500 0.500 0.520 0.122 0.238 0.120 0.094 0.016 2.54 BSC 13.200 3.100 6.050 3.050 2.400 0.400 MAX. 0.190 0.111 0.112 0.035 0.055 0.055 0.025 0.386 0.635 0.509 0.419 0.100 BSC 0.541 0.138 0.242 0.136 0.098 0.020 Notes 1. To be used only for process drawing. 2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet Cpk > 1.33. 4. All dimensions include burrs and plating thickness. 5. No chipping or package damage. 服务热线：400-655-8788 8 VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L2 B A1 L4 Detail “A” Rotated 90° CW scale 8:1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. 4 E1 Section B - B and C - C Scale: none View A - A INCHES INCHES MILLIMETERS MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 9 服务热线：400-655-8788 VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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