LNE08R085

LNC08R085\LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5mΩ Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect RDS(on).max@ VGS=10V 8.5mΩ ID 80A transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and Pin Configuration commutation mode. These devices are well suited for high efficiency fast switching applications. Features  80V,80A,RDS(on).max=8.5mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green device available TO-220 D G TO-263 Applications  Motor Drives  UPS  DC-DC Converter S Pb N-Channel MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Value Unit 80 V 80 A 53 A IDM 320 A VGSS ±20 V EAS 306 mJ 147 W 49 W VDSS 1) Continuous drain current ( TC = 25°C ) ID 1) Continuous drain current ( TC = 100°C ) Pulsed drain current TO-220MF 2) Gate-Source voltage 3) Avalanche energy Power Dissipation ( TC = 25°C ) TO-220/TO-263 PD Power Dissipation ( TC = 25°C ) TO-220MF Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Value Unit 0.85 °C/W 2.55 °C/W 62 °C/W 80 °C/W Thermal Characteristics Parameter Symbol Thermal Resistance, Junction-to-Case TO-220/TO-263 RθJC Thermal Resistance, Junction-to-Case TO-220MF Thermal Resistance, Junction-to-Ambient TO-220/TO-263 RθJA Thermal Resistance, Junction-to-Ambient TO-220MF Version 1.0 , 2018 1 www.lonten.cc LNC08R085\LND08R085/LNE08R085 Package Marking and Ordering Information Device Device Package Marking LNC08R085 TO-220 LNC08R085 LND08R085 TO-220MF LND08R085 LNE08R085 TO-263 LNE08R085 Electrical Characteristics Parameter TJ = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=250uA 80 --- --- V Gate threshold voltage VGS(th) VDS=VGS, ID=250uA 1.0 1.6 2.5 V VDS=80V, VGS=0V, TJ = 25°C --- --- 1 μA Drain-source leakage current IDSS VDS=64V, VGS=0V, TJ = 125°C --- --- 30 μA Gate leakage current, Forward IGSSF VGS=20 V, VDS=0 V --- --- 100 nA Gate leakage current, Reverse IGSSR VGS=-20 V, VDS=0 V --- --- -100 nA VGS=10 V, ID= 20 A --- 6.5 8.5 mΩ Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=10 A --- 7.8 11 mΩ VDS =10V , ID=20A --- 50 --- S --- 6141 --- --- 256 --- Forward transconductance gfs Dynamic characteristics Input capacitance Output capacitance Ciss Coss VDS = 50 V, VGS = 0 V, pF F = 1MHz Reverse transfer capacitance Crss --- 189 --- Turn-on delay time td(on) --- 20 --- Rise time tr --- 56 --- Turn-off delay time td(off) --- 75 --- Fall time tf --- 36 --- Gate resistance Rg --- 2.1 --- --- 18 --- --- 30 --- --- 127 --- VDD = 50V,VGS=10V, ID = 20A VGS=0V, VDS=0V, F=1MHz ns Ω Gate charge characteristics Gate to source charge Gate to drain charge Qgs Qgd VDS=50 V, ID=20A, nC VGS= 10 V Gate charge tota Qg Drain-Source diode characteristics and Maximum Ratings Diode Forward Voltage4) VSD VGS=0V, IS=20A, TJ=25℃ --- --- 1.3 V Reverse Recovery Time trr IS=20A, di/dt=100A/us, --- 160 --- ns Reverse Recovery Charge Qrr TJ=25℃ --- 136 --- nC Notes: 1: The maximum junction current rating is package limited. 2: Repetitive Rating: Pulse width limited by maximum junction temperature. 3: VDD=50V, VGS=10V, L=0.5mH, IAS=35A, RG=25Ω, Starting TJ=25℃. 4: Pulse Test：Pulse Width ≤300μs, Duty Cycle≤2％. Version 1.0 , 2018 2 www.lonten.cc LNC08R085\LND08R085/LNE08R085 Electrical Characteristics Diagrams Figure 1. Typ. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Characteristics Figure 4. Gate Charge Waveform Figure 5. Body-Diode Characteristics Version 1.0 , 2018 Figure 6. Rdson-Drain Current 3 www.lonten.cc LNC08R085\LND08R085/LNE08R085 Figure 7. Rdson-Junction Temperature(℃) Figure 8. Maximum Safe Operating Area 10us 100us DS(on) D Drain current I (A) 1ms Limited by R DC Notes: T = 25°C c T = 150°C j Single Pulse Drain-Source Voltage V DS (V) Figure 6. Normalized Maximum Transient Thermal Impedance (RthJC) Figure 7. Normalized Maximum Transient Thermal Impedance (RthJA) Version 1.0 , 2018 4 www.lonten.cc LNC08R085\LND08R085/LNE08R085 Test Circuit & Waveform Figure 8. Gate Charge Test Circuit & Waveform Vgs Qg 10V VDC DUT VDC Qgs Vds Qgd Vgs Ig charge Figure 9. Resistive Switching Test Circuit & Waveforms Vds RL 90% Vds Vgs DUT Rg VDC Vdd 10% Vgs Vgs Td(on) Tr(on) Td(off) Ton Tf(off) Toff Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform L E AR  V gs Vds Vds Id 1 2 LI AR 2 BVdss IAR Vgs Id DUT Rg VDC Vdd Vgs Vgs Figure 11. Diode Recovery Circuit & Waveform Vds+ DUT Vds- Isd L Vgs VDC Vdd Ig Version 1.0 , 2018 5 www.lonten.cc LNC08R085\LND08R085/LNE08R085 TO-220 PACKAGE INFORMATION COMMON DIMENSIONS MM INCH SYMBOL MIN NOM MAX MIN NOM MAX A 4.37 4.57 4.70 0.172 0.180 0.185 A1 1.25 1.30 1.40 0.049 0.051 0.055 A2 2.20 2.40 2.60 0.087 0.094 0.102 b 0.70 0.80 0.95 0.028 0.031 0.037 b2 1.17 1.27 1.47 0.046 0.050 0.058 c 0.45 0.50 0.60 0.018 0.020 0.024 D 15.10 15.60 16.10 0.594 0.614 0.634 D1 8.80 9.10 9.40 0.346 0.358 0.370 D2 5.50 - - 0.217 - - E 9.70 10.00 10.30 0.382 0.394 0.406 E3 7.00 - - 0.276 - - e 2.54BCS 0.1BSC e1 5.08BCS 0.2REF H1 6.25 6.50 6.85 0.246 0.256 0.270 L 12.75 13.50 13.80 0.502 0.531 0.543 L1 - 3.10 3.40 - 0.122 0.134 ØP 3.40 3.60 3.80 0.134 0.142 0.150 Q 2.60 2.80 3.00 0.102 0.110 0.118 TO-220 Part Marking Information Lonten Logo Lonten LNC08R085 Part Number ABYWW99 “99” Manufacturing code “AB” Foundry & Assembly code “YWW” Date Code Version 1.0 , 2018 6 www.lonten.cc LNC08R085\LND08R085/LNE08R085 TO-220MF PACKAGE INFORMATION COMMON DIMENSIONS MM INCH SYMBOL MIN NOM MAX MIN NOM MAX E 9.96 10.16 10.36 0.392 0.400 0.408 A 4.50 4.70 4.90 0.177 0.185 0.193 A1 2.34 2.54 2.74 0.092 0.100 0.108 A2 0.30 0.45 0.60 0.012 0.018 0.024 A4 2.56 2.76 2.96 0.101 0.109 0.117 c 0.40 0.50 0.65 0.016 0.020 0.026 c1 1.20 1.30 1.35 0.047 0.051 0.053 D 15.57 15.87 16.17 0.613 0.625 0.637 H1 6.70REF 0.264REF e 2.54BSC 0.1BSC L 12.68 12.98 13.28 0.499 0.511 0.523 L1 2.88 3.03 3.18 0.113 0.119 0.125 ØP 3.03 3.18 3.38 0.119 0.125 0.133 ØP3 3.15 3.45 3.65 0.124 0.136 0.144 F3 3.15 3.30 3.45 0.124 0.130 0.136 G3 1.25 1.35 1.55 0.049 0.053 0.061 b1 1.18 1.28 1.43 0.046 0.050 0.056 b2 0.70 0.80 0.95 0.028 0.031 0.037 TO-220MF Part Marking Information Lonten Logo Lonten LND08R085 Part Number ABYWW99 “AB” Foundry & Assembly code “YWW” Date Code Version 1.0 , 2018 “99” Manufacturing code 7 www.lonten.cc LNC08R085\LND08R085/LNE08R085 TO-263 PACKAGE INFORMATION COMMON DIMENSIONS MM INCH SYMBOL MIN NOM MAX MIN NOM MAX A 4.37 4.57 4.77 0.172 0.180 0.188 A1 1.22 1.27 1.42 0.048 0.050 0.056 A2 2.49 2.69 2.89 0.098 0.106 0.114 A3 0.00 0.13 0.25 0.000 0.005 0.010 b 0.70 0.81 0.96 0.028 0.032 0.038 b1 1.17 1.27 1.47 0.046 0.050 0.058 c 0.30 0.38 0.53 0.012 0.015 0.021 D1 8.50 8.70 8.90 0.335 0.343 0.350 D4 6.60 — — 0.260 — — E 9.86 10.16 10.36 0.388 0.400 0.408 E5 7.06 — — 0.278 — — e 2.54 BSC 0.100 BSC H 14.70 15.10 15.50 0.579 0.594 0.610 H2 1.07 1.27 1.47 0.042 0.050 0.058 L 2.00 2.30 2.60 0.079 0.091 0.102 L1 1.40 1.55 1.70 0.055 0.061 0.067 L4 θ 0.25 BSC 0° 5° 0.010 BSC 9° 0° 5° 9° TO-263 Part Marking Information Lonten Logo Lonten LNE08R085 Part Number ABYWW99 “AB” Foundry & Assembly code “99” Manufacturing code “YWW” Date Code Version 1.0 , 2018 8 www.lonten.cc LNC08R085\LND08R085/LNE08R085 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 1.0 , 2018 9 www.lonten.cc