H7650
750mA Low Power High PSRR LDO
Features
Low voltage drop: 0.06V@100mA
Low Quiescent Current: 25uA at 5.0V
High input voltage: 8V
Output voltage accuracy: tolerance ±2%
Low temperature coefficient
SOT89 ,SOT223 and SOT23-5 package
Applications
Battery-powered equipment
GRS Receivers
Hand-Hold Equipment
Wireless LAN
General Description
The H7650 consists of a high-precision voltage
output, three-pin regulators, that provide a high
reference, an error amplification circuit, and a
current even when the input/output voltage
current limited output driver. Transient response
differential is small. Low power consumption and
to load variations have improved in comparison to
high accuracy is achieved through CMOS and
laser trimming technologies.
the existing series.
PR
O
Order Information
H7650-①②③④
Designator
① ②
IN
The H7650 series is a group of positive voltage
③
SI
④
Symbol
Integer
P
G
M5
R
G
Description
Output Voltage(1.2~5.0V)
Package:SOT89
Package:SOT223
Package:SOT23-5
RoHS / Pb Free
Halogen Free
Block Diagram
Ver1.92
1
Shanghai Siproin Microelectronics Co.
H7650
750mA Low Power High PSRR LDO
Absolute Maximum Ratings
Supply Voltage ................................-0.3V to 9V
Operating Temperature .................-40℃ to 85℃
Storage Temperature ..................-40℃ to 125℃
PR
O
Output Current……………………………..1.1A
IN
Pin Assignment
Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other
conditions beyond those listed in the specification is not implied and prolonged exposure to extreme
SI
conditions may affect device reliability.
Ver1.92
2
Shanghai Siproin Microelectronics Co.
H7650
750mA Low Power High PSRR LDO
Electrical Characteristics
H7650 for any output voltage
(Ta=25℃)
Symbol
Parameter
Conditions
VOUT
Output Voltage
Vin=Vout+1V
1.0mA≤Iout≤30mA
IOUT
Output Current*1
VDROP
Low dropout*2
∆VOUT
∆V IN × VOUT
Line Regulation
ΔVOUT ΔIOUT
△Vout /ΔIout
Thermal shutdown
detection
temperature
Thermal shutdown
--
Vout×1.02
V
--
750
--
mA
Iout=100mA
Vin= Vout+1V
1.0mA≤Iout≤100mA
--
0.05
0.2
%/V
--
12
30
mV
IN
Iout=30mA
0℃≤Ta≤70℃
F=1KHz
PSRR
Vin=Vout+1V
--
±100
--
Ppm/℃
--
70
--
dB
Iss1
--
--
25
35
uA
Vin
--
--
--
10
V
TSD
Junction temperature
-
160
-
℃
TSR
Junction temperature
-
140
-
℃
SI
release
Vout×0.98
PR
O
Input Voltage
Unit
1.6V≤Vin≤8V
Coefficiency
Supply Current
Max.
Refer to the next table
△Vout/(Ta·Vout)
PSRR
Typ.
Vin-Vout=1V
Output voltage
Temperature
Min.
temperature
Electrical Characteristics by Output Voltage:
Output Voltage Vout(V)
Dropout Voltage Vdif(V)
Conditions
Typ.
Max.
Vout ≤ 2.0V
Iout=60 mA
0.05
0.08
2.0 < Vout ≤ 3.0
Iout=80 mA
0.05
0.08
0.06
0.08
0.05
0.08
0.13
0.16
0.12
0.16
0.65
0.8
0.6
0.8
3.0 < Vout ≤ 4.0
4.0 < Vout ≤ 5.0
3.0 < Vout ≤ 4.0
4.0 < Vout ≤ 5.0
3.0 < Vout ≤ 4.0
4.0 < Vout ≤ 5.0
Ver1.92
Iout=100 mA
Iout=200 mA
Iout=1000 mA
3
Shanghai Siproin Microelectronics Co.
H7650
750mA Low Power High PSRR LDO
SI
PR
O
IN
Application Circuits
Note1:Input capacitor CIN=1uF.
Note2:Ouput capacitor COUT=1uF/6.8uF(1uF Tantalum capacitor or 6.8uF ceramic capacitor is
recommended).
Ver1.92
4
Shanghai Siproin Microelectronics Co.
H7650
750mA Low Power High PSRR LDO
SI
PR
O
IN
Package Information
Ver1.92
5
Shanghai Siproin Microelectronics Co.
H7650
SI
PR
O
IN
750mA Low Power High PSRR LDO
Ver1.92
6
Shanghai Siproin Microelectronics Co.
H7650
SI
PR
O
IN
750mA Low Power High PSRR LDO
Ver1.92
7
Shanghai Siproin Microelectronics Co.
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