HY4903B

HY4903P/B N-Channel Enhancement Mode MOSFET Features z Pin Description 30V/290A RDS(ON)=1.6mΩ(typ.) @VGS = 10V z 100% avalanche tested z Excellent CdV/dt effect decline z /HDG)UHH Device Available S GD GD S TO-220FB-3L TO-263-2L Applications z Switching Application z Power Management for DC/DC N-Channel MOSFET Ordering and Marking Information P HY4903 Package Code P : TO-220FB-3L B HY4903 Date Code YYXXX WW YYXXXJWW G YYXXXJWW G B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY4903P/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 290 A TC=25°C 1000** A TC=25°C 290 TC=100°C 200 TC=25°C 214 Tc=100°C 107 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation A W RJC Thermal Resistance-Junction to Case 0.7 °C/W RJA Thermal Resistance-Junction to Ambient 62.5 °C/W EAS Avalanche Energy,Single Pulsed L=0.5mH mJ 1325*** Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=24V Electrical Characteristics Symbol (TC = 25C Unless Otherwise Noted) Parameter Test Conditions HY4903 Min. Typ. Max. 30 - - - - 1 - - 30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS VGS=0V, IDS=250A VDS=30V, VGS=0V TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 1.0 - 3.0 V Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=145A - 1.6 2.0 m 2.0 3.0 m - 0.8 1.0 V - 38 - ns - 80 - nC RDS(ON) * Drain-Source On-state Resistance VGS=4.5V, I DS=145A Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=145 A, VGS=0V IDS=145A, dlSD/dt=100A/s 2 V1.0 HY4903P/B Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY4903 Min. Typ. Max. - 0.5 - - 11506 - - 1236 - - 762 - - 52 - - 120 - - 90 - - 78 - - 247 - - 27 - - 58 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, R G =3.3 , IDS =145A, VGS =10 V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=24V, VGS=10 V, I DS =145A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. . www.hymexa.com 3 V1.0 HY4903P/B Typical Operating Characteristics Power Dissipation Drain Current 350 ID - Drain Current (A) Ptot - Power (W) 250 200 150 100 limited by package 300 250 200 150 100 50 50 o TC=25 C 0 0 o TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ID - Drain Current (A) 1000 it im )L n o s( Rd 100us 100 1ms 10ms 10 DC 1 0.1 10 1 100 400 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 1 Duty = 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.001 0.01 Mounted on minimum pad o RJA :62.5 C/W Single 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com 4 V1.0 HY4903P/B Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 640 4 RDS(ON) - On - Resistance (m) 560 ID - Drain Current (A) VGS= 7,8,9,10V 480 6V 400 320 5V 240 4V 160 80 0 3 VGS=4.5V 2 VGS=10V 1 3V 0 1 2 3 4 0 5 0 100 200 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.8 500 IDS =250A IDS=145A 1.6 7 Normalized Threshold Vlotage RDS(ON) - On - Resistance (m) 400 VDS - Drain-Source Voltage (V) 8 6 5 4 3 2 1 4 300 1.4 1.2 1.0 0.8 0.6 0.4 0.2 5 6 7 8 9 0.0 -50 -25 10 VGS - Gate - Source Voltage (V) www.hymexa.com 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 5 V1.0 HY4903P/B Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.2 VGS = 10V 200 IDS = 145A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o 100 Tj=175 C o Tj=25 C 10 0.6 0.4 o 0.2 -50 -25 RON@T =25 C:1.6m  j 0 25 50 1 0.0 75 100 125 150 175 0.6 0.8 VSD - Source-Drain Voltage (V) Capacitance Gate Charge 1.0 10 Frequency=1MHz 20000 VDS=24V VGS - Gate-source Voltage (V) 9 18000 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 22000 16000 14000 Ciss 12000 10000 8000 6000 4000 Coss 2000 0 0.2 5 10 15 20 25 30 35 7 6 5 4 3 2 0 40 0 40 80 120 160 200 240 280 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.hymexa.com 8 1 Crss 0 IDS=145A 6 V1.0 HY4903P/B Avalanche Test Circuit VDS L tp VDSX(SUS) DUT VDS IAS RG VDD IL tp EAS 0.01Ω VDD tAV Switching Time Test Circuit VDS RD VDS 90% DUT RG VGS VDD 10% VGS tp td(on) tr www.hymexa.com 7 td(off) tf V1.0 HY4903P/B Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL www.hymexa.com mm MIN N MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ĭ3 3.40 3.60 3.80 Q 2.60 2.80 3.00 8 V1.0 HY4903P/B TO-263-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - e 2.54 BSC H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 0.25 BSC ș www.hymexa.com 0° 9 5° 9° V1.0 HY4903P/B Devices Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 TO-263-2L Tube 50 Classification Profile www.hymexa.com 10 V1.0 HY4903P/B Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness