HSL6008

HSL6008 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSL6008 is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSL6008 meet the RoHS and Green Product requirement with full function reliability approved. VDS 60 V RDS(ON),TYP 80 mΩ ID 2.8 A SOT223 Pin Configuration ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 2.8 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1, 2.3 A IDM Pulsed Drain Current2, 12 A PD@TA=25℃ Total Power Dissipation3 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 85 ℃/W --- 48 ℃/W 1 HSL6008 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.054 --- V/℃ VGS=10V , ID=2.5A --- 80 100 VGS=4.5V , ID=2A --- 85 110 1.2 --- 2.5 V --- -4.96 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 13 --- S Qg Total Gate Charge (4.5V) --- 5 7.0 Qgs Gate-Source Charge --- 1.68 2.4 Qgd Gate-Drain Charge --- 1.9 2.7 VDS=48V , VGS=4.5V , ID=2A nC --- 1.6 3.2 Rise Time VDS=30V , VGS=10V , RG=3.3, --- 7.2 13 Turn-Off Delay Time ID=2A --- 25 50 Fall Time --- 14.4 28.8 Ciss Input Capacitance --- 511 715 Coss Output Capacitance --- 38 53 Crss Reverse Transfer Capacitance --- 25 35 Min. Typ. Max. Unit --- --- 2.8 A --- --- 12 A --- --- 1.2 V --- 9.7 --- nS --- 5.8 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,4 ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=2A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSL6008 N-Ch 60V Fast Switching MOSFETs Typical Characteristics 100 12 ID=2.5A VGS=10V 95 VGS=7V VGS=5V 8 90 RDSON (mΩ) ID Drain Current (A) 10 VGS=4.5V 6 VGS=3V 85 4 80 2 0 75 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 3 2 Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source Voltage 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics diode Normalized On Resistance 2.0 1.5 1.0 0.5 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ www.hs-semi.cn Fig.6 Normalized RDSON v.s TJ Ver 2.0 3 HSL6008 N-Ch 60V Fast Switching MOSFETs 1000 100.00 F=1.0MHz Capacitance (pF) Ciss 100us 10.00 ID (A) 1ms 100 1.00 10ms Coss 100ms 0.10 TA=25oC Single Pulse Crss 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 25 0.01 0.01 Fig.7 Capacitance DC 0.1 1 VDS (V) 10 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TA+P DMXRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4