HSL0004

HSL0004 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSL0004 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSL0004 meets the RoHS and Green Product requirement with full function reliability approved. VDS 100 V RDS(ON),typ 90 mΩ ID 3 A SOT223 Pin Configuration ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 3 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 2.5 A IDM Pulsed Drain Current2 10 A PD@TA=25℃ Total Power Dissipation3 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 85 ℃/W --- 30 ℃/W 1 HSL0004 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit 100 --- --- V VGS=10V , ID=2A --- 90 112 m VGS=4.5V , ID=1A --- 95 120 m VGS=VDS , ID =250uA 1.0 1.5 2.5 V VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 20 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 4  Qg Total Gate Charge (10V) --- 26.2 36.7 Qgs Gate-Source Charge --- 3.8 5.32 Qgd Gate-Drain Charge --- 4.8 6.7 VDS=80V , VGS=10V , ID=2A nC --- 4.2 8.4 Rise Time VDD=50V , VGS=10V , RG=3.3 --- 7.6 14 Turn-Off Delay Time ID=2A --- 41 82 Fall Time --- 14 28 Ciss Input Capacitance --- 1535 2149 Coss Output Capacitance --- 60 84 Crss Reverse Transfer Capacitance --- 37 52 Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 2.5 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time --- 35 --- nS Qrr Reverse Recovery Charge --- 17 --- nC IF=2A , dI/dt=100A/µs , TJ=25℃ Note: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The power dissipation is limited by 150℃ junction temperature 4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSL0004 N-Ch 100V Fast Switching MOSFETs Typical Characteristics 96 15 ID=2A VGS=10V VGS=7V 94 VGS=5V VGS=4.5V RDSON (mΩ) ID Drain Current (A) 12 9 92 VGS=3V 6 90 3 88 0 0 0.5 1 1.5 2 VDS , Drain-to-Source Voltage (V) 4 2.5 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 2.5 Normalized On Resistance 1.8 2.0 Normalized VGS(th) 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 150 -50 Fig.5 Normalized VGS(th) vs TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.6 Normalized RDSON vs TJ Ver 2.0 3 HSL0004 N-Ch 100V Fast Switching MOSFETs 10000 10.00 F=1.0MHz 100us 1ms 1000 1.00 ID (A) Capacitance (pF) Ciss 100 TA=25o C Single Pulse Crss 10 5 9 13 17 21 100ms 0.10 Coss 1 10ms 0.01 0.01 25 VDS , Drain to Source Voltage (V) 0.1 Fig.7 Capacitance DC 1 VDS (V) 10 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4