HSL10N06

HSL10N06 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSL10N06 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSL10N06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology VDS 60 V RDS(ON),MAX 36 mΩ ID 10 A SOT-223 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 10 A ID@TC=70℃ Continuous Drain Current, VGS @ 10V1 8 A IDM Pulsed Drain Current2 30 A IAS Avalanche Current 13 A 31 W PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 60 ℃/W RθJC Thermal Resistance Junction-Case1 --- 4 ℃/W www.hs-semi.cn Ver 2.0 Typ. 1 HSL10N06 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.044 --- V/℃ VGS=10V , ID=4A --- 28 36 VGS=4.5V , ID=2A --- 38 45 1.0 --- 2.5 V --- -4.8 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 25.3 --- S Qg Total Gate Charge (10V) --- 25 --- Qgs Gate-Source Charge --- 2.9 --- Qgd Gate-Drain Charge --- 5 --- Td(on) Turn-On Delay Time VDS=48V , VGS=10V , ID=5A --- 2.8 --- Rise Time VDD=30V , VGS=10V , RG=3.3 --- 17 --- Turn-Off Delay Time ID=5A --- 21.2 --- Fall Time --- 5.6 --- Ciss Input Capacitance --- 1227 --- Coss Output Capacitance --- 69 --- Crss Reverse Transfer Capacitance --- 46 --- Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz nC ns pF Diode Characteristics Symbol Min. Typ. Max. Unit VSD Diode Forward Voltage2 Parameter VGS=0V , IS=1A , TJ=25℃ Conditions --- --- 1.2 V trr Reverse Recovery Time IF=15A , dI/dt=100A/µs , --- 12.2 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 6.7 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=48V,VGS=10V,L=0.1mH,IAS=13A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSL10N06 N-Ch 60V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSL10N06 N-Ch 60V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSL10N06 N-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSL10N06 www.hs-semi.cn Package code SOT-223 Ver 2.0 Packaging 3000/Tape&Reel 5