HYG350P13NA1B
Single P-Channel Enhancement Mode MOSFET
Feature
Pin Description
-125V/-39A
RDS(ON)=35mΩ (typ.) @ VGS = -10V
100% Avalanche Tested
Reliable and Rugged
Lead- Free and Green Devices Available
(RoHS Compliant)
TO-263-2L
Applications
Power Tool Application
Networking DC-DC Power System
Single P-Channel MOSFET
Ordering and Marking Information
Package Code
B
B: TO-263-2L
G350P13
Date Code
XYMXXXXXX
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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1
V1.0
HYG350P13NA1B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
-125
V
VGSS
Gate-Source Voltage
±20
V
Maximum Junction Temperature
175
°C
-55 to 175
°C
Tc=25°C
-39
A
Tc=25°C
-150
A
Tc=25°C
-39
A
Tc=100°C
-27
A
Tc=25°C
120
W
Tc=100°C
60
W
1.25
°C/W
62
°C/W
388.7
mJ
TJ
TSTG
IS
Storage Temperature Range
Source Current-Continuous(Body Diode)
Mounted on Large Heat Sink
Note:
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RJC
Thermal Resistance, Junction-to-Case
RJA
Thermal Resistance, Junction-to-Ambient **
EAS
SinglePulsed-Avalanche Energy ***
L=0.3mH
* Repetitive rating;pulse width limited by max.junction temperature.
** Surface mounted on FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.3mH, VDS =-100V., VGS =-10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HYG350P13NA1
Unit
Min
Typ.
Max
VGS=0V,IDS=250μA
-125
-
-
V
VDS=-125V,VGS=0V
-
-
-1
μA
-
-
-50
μA
-1.0
-2.4
-3.0
V
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
VGS(th)
IGSS
RDS(ON)*
TJ=100°C
Gate Threshold Voltage
VDS=VGS, IDS=-250μA
Gate-Source Leakage Current
VGS=±20V,VDS=0V
-
-
±100
nA
Drain-Source On-State Resistance
VGS=-10V,IDS=-20A
-
35
43
mΩ
Diode Characteristics
VSD*
Diode Forward Voltage
ISD=-20A,VGS=0V
-
-0.84
-1.3
V
trr
Reverse Recovery Time
ISD=-20A,
-
35.6
-
ns
Qrr
Reverse Recovery Charge
dISD/dt=100A/μs
-
58.2
-
nC
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2
V1.0
HYG350P13NA1B
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HYG350P13NA1
Min
Typ.
Max
Unit
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
3.0
-
Ciss
Input Capacitance
VGS=0V,
-
4118
-
Coss
Output Capacitance
VDS= -25V,
-
285
-
Crss
Reverse Transfer Capacitance
Frequency=1.0MHz
-
194.8
-
td(ON)
Turn-on Delay Time
-
35.2
-
Tr
Turn-on Rise Time
VDD=-62V,RG=4Ω,
-
101.2
-
td(OFF)
Turn-off Delay Time
IDS=-20A,VGS=-10V
-
35
-
-
92.3
-
Tf
Turn-off Fall Time
Gate Charge
Qg(10V)
Ω
pF
ns
Characteristics
Total Gate Charge
VDS =-100V, VGS=-10V,
-
79.4
-
Qgs
Gate-Source Charge
ID=-20A
-
13.0
-
Qgd
Gate-Drain Charge
-
30.3
-
VDS =-100V, VGS=-10V,
ID=-20A
nC
nC
Note: *Pulse test,pulse width ≤ 300us,duty cycle ≤ 2%
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3
V1.0
HYG350P13NA1B
Typical Operating Characteristics
Figure 2: Drain Current
ID-Drain Current(A)
Power Dissipation (w)
Figure 1: Power Dissipation
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Zθjc
-ID-Drain Current(A)
Thermal Impedance
Figure 4: Thermal Transient Impedance
Normalized Transient
Figure 3: Safe Operation Area
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
-VDS-Drain-Source Voltage(V)
Figure 6: Drain-Source On Resistance
ID-Drain Current(A)
RDS(ON)-ON-Resistance(mΩ)
Figure 5: Output Characteristics
VDS-Drain-Source Voltage (V)
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ID-Drain Current(A)
4
V1.0
HYG350P13NA1B
Typical Operating Characteristics(Cont.)
Figure 8: Source-Drain Diode Forward
IS-Source Current (A)
Normalized On-Resistance
Figure 7: On-Resistance vs. Temperature
Tj-Junction Temperature (℃)
VSD-Source-Drain Voltage(V)
Figure 10: Gate Charge Characteristics
C-Capacitance(F)
VGS-Gate-Source Voltage (V)
Figure 9: Capacitance Characteristics
VDS-Drain-Source Voltage (V)
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QG-Gate Charge (nC)
5
V1.0
HYG350P13NA1B
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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6
V1.0
HYG350P13NA1B
Device Per Unit
Package Type
TO-263-2L
TO-263-2L
Package Information
Unit
Quantity
Tube
Reel
50
800
TO-263-2L
COMMON DIMENSIONS
SYMBOL
mm
MIN
NOM
MAX
A
4.37
4.57
4.77
A1
1.22
1.27
1.42
A2
2.49
2.69
2.89
A3
0
0.13
0.25
b
0.7
0.81
0.96
b1
1.17
1.27
1.47
c
0.3
0.38
0.53
D1
8.5
8.7
8.9
D4
6.6
-
-
E
9.86
10.16
10.36
E5
7.06
-
-
e
2.54 BSC
H
14.7
15.1
15.5
H2
1.07
1.27
1.47
L
2
2.3
2.6
L1
1.4
1.55
1.7
L4
θ
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0.25 BSC
0°
5°
7
9°
V1.0
HYG350P13NA1B
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmaxto TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tpto Tsmax)
Time 25°C to peak temperature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
60-120 seconds
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
217 °C
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
20** seconds
30** seconds
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
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8
V1.0
HYG350P13NA1B
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Volume mm³
Volume mm³
Thickness
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