LM-L2N7002LT1G

LM-L2N7002LT1G N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 60V 340mA ＜2.5ohm ＜3.0ohm General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V TA=25℃ @ Steady State Drain Current 340 ID TA=70℃ @ Steady State Unit mA 272 Pulsed Drain Current A IDM 1.5 A Total Power Dissipation @ TA=25℃ PD 350 mW RθJA 357 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LM-L2N7002LT1G F2 7002. 3000 30000 120000 7“ reel Rev : 03.12.2021 1/5 www.leiditech.com LM-L2N7002LT1G ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA IGSS1 VGS= ±20V, VDS=0V ±100 nA IGSS2 VGS= ±10V, VDS=0V ±50 nA VGS(th) VDS= VGS, ID=250μA 1.5 2.5 V VGS= 10V, ID=-300mA 1.2 2.5 VGS= 4.5V, ID=200mA 1.3 3.0 Static Parameter V Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Continuous Current 1 Ω RDS(ON) VSD IS=300mA,VGS=0V IS 1.2 V 340 mA Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 16 VDS=30V,VGS=0V,f=1MHZ 10 pF 5.5 Switching Parameters Total Gate Charge Turn-on Delay Time Qg VGS=10V,VDS=30V,ID=0.3A 1.7 Reverse recovery Time tD(off) trr nC 5 tD(on) VGS=10V,VDD=30V, ID=300mA, RGEN=6Ω Turn-off Delay Time 2.4 ns 17 VGS=0V,IS=300mA,VR=25V, dIS/dt=100A/μs 30 ns A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Rev : 03.12.2021 2/5 www.leiditech.com LM-L2N7002LT1G ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Rev : 03.12.2021 Figure6. Drain-Source on Resistance 3/5 www.leiditech.com LM-L2N7002LT1G Figure7. Safe Operation Area Rev : 03.12.2021 Figure8. Switching wave 4/5 www.leiditech.com LM-L2N7002LT1G ■ SOT-23 Package information ■SOT-23 Suggested Pad Layout Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 03.12.2021 5/5 www.leiditech.com