FM25Q16A-SO-T-G

FM25Q16 16M-BIT SERIAL FLASH MEMORY Datasheet Sep. 2015 FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO NOT CONVEY ANY LICENSE UNDER ANY INTELLECTUAL PROPERTY RIGHTS, OR ANY OTHER RIGHTS, BELONGING TO SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD OR A THIRD PARTY. WHEN USING THE INFORMATION CONTAINED IN THIS DOCUMENTS, PLEASE BE SURE TO EVALUATE ALL INFORMATION AS A TOTAL SYSTEM BEFORE MAKING A FINAL DECISION ON THE APPLICABILITY OF THE INFORMATION AND PRODUCTS. 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CONTACT SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD SALES OFFICE TO OBTAIN THE LATEST SPECIFICATIONS AND BEFORE PLACING YOUR PRODUCT ORDER. PLEASE ALSO PAY ATTENTION TO INFORMATION PUBLISHED BY SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD BY VARIOUS MEANS, INCLUDING SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD HOME PAGE (HTTP://WWW.FMSH.COM/). PLEASE CONTACT SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD LOCAL SALES OFFICE FOR THE SPECIFICATION REGARDING THE INFORMATION IN THIS DOCUMENT OR SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD PRODUCTS. Trademarks Shanghai Fudan Microelectronics Group Co., Ltd name and logo, the “复旦” logo are trademarks or registered trademarks of Shanghai Fudan Microelectronics Group Co., Ltd or its subsidiaries in China. Shanghai Fudan Microelectronics Group Co., Ltd, Printed in the China, All Rights Reserved. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 2 1. Description The FM25Q16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection mechanisms. The FM25Q16 supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O as well as 2-clock instruction cycle Quad Peripheral Interface (QPI). They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The FM25Q16 can be programmed 1 to 256 bytes at a time, using the Page Program instruction. It is designed to allow either single Sector/Block at a time or full chip erase operation. The FM25Q16 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector or block. 2. Features z 16Mbit of Flash memory – 512 uniform sectors with 4K-byte each – 32 uniform blocks with 64K-byte each or – 64 uniform blocks with 32K-byte each – 256 bytes per programmable page z Wide Operation Range – 2.7V~3.6V single voltage supply – Industrial temperature range z Serial Interface – Standard SPI: CLK, CS#, DI, DO, WP# – Dual SPI: CLK, CS#, DQ0, DQ1, WP# – Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3 – QPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3 – Continuous READ mode support – Program/Erase Suspend and Resume support – Allow true XIP (execute in place) operation z High Performance – Max FAST_READ clock frequency: 104MHz – Dual I/O Data transfer up to 208Mbits/s – Quad I/O Data transfer up to 416Mbits/s – Typical page program time: 1.5ms – Typical sector erase time: 90ms – Typical block erase time: 500ms – Typical chip erase time: 16s z Low Power Consumption – Typical standby current: 1μA FM25Q16 16M-BIT SERIAL FLASH MEMORY z Security – Software and hardware write protection – Lockable 4X256-Byte OTP security sectors – 64-Bit Unique ID for each device (1) z High Reliability – Endurance: 100,000 program/erase cycles – Data retention: 20 years z Green Package – 8-pin SOP (150mil) – 8-pin SOP (208mil) – 8-pin TDFN (2×3mm) – 8-pin TDFN (5×6mm) – All Packages are RoHS Compliant and Halogenfree Note 1.This feature is available upon special order. Please contact Shanghai Fudan Microelectronics Group Co., Ltd for details. 3. Packaging Type 4. Pin Configurations PIN PIN I/O FUNCTION NO. NAME 1 CS# I Chip Select Input DO Data Output (Data Input Output 2 I/O (1) (DQ1) 1) WP# Write Protect Input (Data Input 3 I/O (DQ2) Output 2)(2) 4 VSS Ground DI Data Input (Data Input Output 5 I/O (1) (DQ0) 0) 6 CLK I Serial Clock Input HOLD# Hold Input (Data Input Output 7 I/O (2) 3) (DQ3) 8 VCC Power Supply Note: 1 DQ0 and DQ1 are used for Dual SPI instructions. 2 DQ0 – DQ3 are used for Quad SPI and QPI instructions. Ver 1.1 Datasheet 3 5. Block Diagram Figure 1 FM25Q16 Serial Flash Memory Block Diagram FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 4 6. Pin Descriptions Serial Clock (CLK): The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. Serial Data Input, Output and I/Os (DI, DO and DQ0, DQ1, DQ2, DQ3): The FM25Q16 supports standard SPI, Dual SPI, Quad SPI and QPI operation. Standard SPI instructions use the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to read data or status from the device on the falling edge of CLK. Dual/Quad SPI and QPI instructions use the bidirectional DQ pins to serially write instructions, addresses or data to the device on the rising edge of CLK and read data or status from the device on the falling edge of CLK. Quad SPI and QPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set. When QE=1, the WP# pin becomes DQ2 and HOLD# pin becomes DQ3. Chip Select (CS#): The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high, the device is deselected and the Serial Data Output (DO, or DQ0, DQ1, DQ2, DQ3) pins are at high impedance. When deselected, the devices power consumption will be at standby levels unless an internal erase, program or write status register cycle is in progress. When CS# is brought low, the device will be selected, power consumption will increase to active levels and instructions can be written to and data read from the device. After power-up, CS# must transition from high to low before a new instruction will be accepted. The CS# input must track the VCC supply level at power-up (see “9 Write Protection” and Figure 66). If needed a pull-up resister on CS# can be used to accomplish this. HOLD (HOLD#): The HOLD# pin allows the device to be paused while it is actively selected. When HOLD# is brought low, while CS# is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored (don’t care). When HOLD# is brought high, device operation can resume. The HOLD# function can be useful when multiple devices are sharing the same SPI signals. The HOLD# pin is active low. When the QE bit of Status Register-2 is set for Quad I/O, the HOLD# pin function is not available since this pin is used for DQ3. Write Protect (WP#): The Write Protect (WP#) pin can be used to prevent the Status Registers from being written. Used in conjunction with the Status Register’s Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits and Status Register Protect (SRP) bits, a portion as small as a 4KB sector or the entire memory array can be hardware protected. The WP# pin is active low. However, when the QE bit of Status Register-2 is set for Quad I/O, the WP# pin function is not available since this pin is used for DQ2. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 5 7. Memory Organization The FM25Q16 array is organized into 8,192 programmable pages of 256-bytes each. Up to 256 bytes can be programmed (bits are programmed from 1 to 0) at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The FM25Q16 has 512 erasable sectors, 64 erasable 32-k byte blocks and 32 erasable 64-k byte blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. Table 1 Group (256KB) Block (64KB) Block (32KB) 31 63 | 62 30 61 | 60 29 59 | 58 28 57 | 56 27 55 | 54 26 53 | 52 25 51 | 50 24 49 | 48 23 47 | 46 22 45 | 44 21 43 | 42 20 41 7 6 5 FM25Q16 16M-BIT SERIAL FLASH MEMORY Memory Organization Sector (4KB) 511 … 496 495 … 480 479 … 464 463 … 448 447 … 432 431 … 416 415 … 400 399 … 384 383 … 368 367 … 352 351 … 336 335 Ver 1.1 Address Range 1FF000h … 1F0000h 1EF000h … 1E0000h 1DF000h … 1D0000h 1CF000h … 1C0000h 1BF000h … 1B0000h 1AF000h … 1A0000h 19F000h … 190000h 18F000h … 180000h 17F000h … 170000h 16F000h … 160000h 15F000h … 150000h 14F000h 1FFFFFh … 1F0FFFh 1EFFFFh … 1E0FFFh 1DFFFFh … 1D0FFFh 1CFFFFh … 1C0FFFh 1BFFFFh … 1B0FFFh 1AFFFFh … 1A0FFFh 19FFFFh … 190FFFh 18FFFFh … 180FFFh 17FFFFh … 170FFFh 16FFFFh … 160FFFh 15FFFFh … 150FFFh 14FFFFh Datasheet 6 Group (256KB) Block (64KB) Block (32KB) | 40 19 39 | 38 18 37 | 36 17 35 | 34 16 33 | 32 15 31 | 30 14 29 | 28 13 27 | 26 12 25 | 24 11 23 | 22 10 21 | 20 9 19 | 18 8 17 | 16 7 15 | 14 6 13 | 12 5 11 4 3 2 1 FM25Q16 16M-BIT SERIAL FLASH MEMORY Sector (4KB) … 320 319 … 304 303 … 288 287 … 272 271 … 256 255 … 240 239 … 224 223 … 208 207 … 192 191 … 176 175 … 160 159 … 144 143 … 128 127 … 112 111 … 96 95 Ver 1.1 Address Range … 140000h 13F000h … 130000h 12F000h … 120000h 11F000h … 110000h 10F000h … 100000h 0FF000h … 0F0000h 0EF000h … 0E0000h 0DF000h … 0D0000h 0CF000h … 0C0000h 0BF000h … 0B0000h 0AF000h … 0A0000h 09F000h … 090000h 08F000h … 080000h 07F000h … 070000h 06F000h … 060000h 05F000h … 140FFFh 13FFFFh … 130FFFh 12FFFFh … 120FFFh 11FFFFh … 110FFFh 10FFFFh … 100FFFh 0FFFFFh … 0F0FFFh 0EFFFFh … 0E0FFFh 0DFFFFh … 0D0FFFh 0CFFFFh … 0C0FFFh 0BFFFFh … 0B0FFFh 0AFFFFh … 0A0FFFh 09FFFFh … 090FFFh 08FFFFh … 080FFFh 07FFFFh … 070FFFh 06FFFFh … 060FFFh 05FFFFh Datasheet 7 Group (256KB) 0 Block (64KB) Block (32KB) | 10 4 9 | 8 3 7 | 6 2 5 | 4 1 3 | 2 0 1 | 0 FM25Q16 16M-BIT SERIAL FLASH MEMORY Sector (4KB) … 80 79 … 64 63 … 48 47 … 32 31 … 16 15 … 2 1 0 Ver 1.1 Address Range … 050000h 04F000h … 040000h 03F000h … 030000h 02F000h … 020000h 01F000h … 010000h 00F000h … 002000h 001000h 000000h … 050FFFh 04FFFFh … 040FFFh 03FFFFh … 030FFFh 02FFFFh … 020FFFh 01FFFFh … 010FFFh 00FFFFh … 002FFFh 001FFFh 000FFFh Datasheet 8 8. Device Operations Figure 2 FM25Q16 Serial Flash Memory Operation Diagram 8.1. Standard SPI The FM25Q16 is accessed through an SPI compatible bus consisting of four signals: Serial Clock (CLK), Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI instructions use the DI input pin to serially write instructions, addresses or data to the device on the rising edge of CLK. The DO output pin is used to read data or status from the device on the falling edge of CLK. SPI bus operation Mode 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and data is not being transferred to the Serial Flash. For Mode 0, the CLK signal is normally low on the falling and rising edges of CS#. For Mode 3, the CLK signal is normally high on the falling and rising edges of CS#. Figure 3 The difference between Mode 0 and Mode 3 8.2. Dual SPI The FM25Q16 supports Dual SPI operation when using instructions such as “Fast Read Dual Output (3Bh)” and “Fast Read Dual I/O (BBh)”. These instructions allow data to be transferred to or from the device at two to three times the rate of ordinary Serial Flash devices. The Dual SPI Read instructions are ideal for quickly downloading code to RAM upon power-up (codeshadowing) or for executing non-speed- critical code directly from the SPI bus (XIP). When using Dual SPI instructions, the DI and DO pins become bidirectional I/O pins: DQ0 and DQ1. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 9 8.3. Quad SPI The FM25Q16 supports Quad SPI operation when using instructions such as “Fast Read Quad Output (6Bh)”, “Fast Read Quad I/O (EBh)”, “Word Read Quad I/O (E7h)” and “Octal Word Read Quad I/O (E3h)”. These instructions allow data to be transferred to or from the device four to six times the rate of ordinary Serial Flash. The Quad Read instructions offer a significant improvement in continuous and random access transfer rates allowing fast code-shadowing to RAM or execution directly from the SPI bus (XIP). When using Quad SPI instructions the DI and DO pins become bidirectional DQ0 and DQ1 and the WP # and HOLD# pins become DQ2 and DQ3 respectively. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set. 8.4. QPI The FM25Q16 supports Quad Peripheral Interface (QPI) operations only when the device is switched from Standard/Dual/Quad SPI mode to QPI mode using the “Enable QPI (38h)” instruction. The typical SPI protocol requires that the byte-long instruction code being shifted into the device only via DI pin in eight serial clocks. The QPI mode utilizes all four DQ pins to input the instruction code, thus only two serial clocks are required. This can significantly reduce the SPI instruction overhead and improve system performance in an XIP environment. Standard/Dual/Quad SPI mode and QPI mode are exclusive. Only one mode can be active at any given time. “Enable QPI (38h)” and “Disable QPI (FFh)” instructions are used to switch between these two modes. Upon power-up or after a software reset using “Reset (99h)” instruction, the default state of the device is Standard/Dual/Quad SPI mode. To enable QPI mode, the non-volatile Quad Enable bit (QE) in Status Register-2 is required to be set. When using QPI instructions, the DI and DO pins become bidirectional DQ0 and DQ1, and the WP# and HOLD# pins become DQ2 and DQ3 respectively. See Figure 2 for the device operation modes. 8.5. Hold For Standard SPI and Dual SPI operations, the HOLD# signal allows the FM25Q16 operation to be paused while it is actively selected (when CS# is low). The HOLD# function may be useful in cases where the SPI data and clock signals are shared with other devices. For example, consider if the page buffer was only partially written when a priority interrupt requires use of the SPI bus. In this case the HOLD# function can save the state of the instruction and the data in the buffer so programming can resume where it left off once the bus is available again. The HOLD# function is only available for standard SPI and Dual SPI operation, not during Quad SPI or QPI. To initiate a HOLD# condition, the device must be selected with CS# low. A HOLD# condition will activate on the falling edge of the HOLD# signal if the CLK signal is already low. If the CLK is not already low the HOLD# condition will activate after the next falling edge of CLK. The HOLD# condition will terminate on the rising edge of the HOLD# signal if the CLK signal is already low. If the CLK is not already low the HOLD# condition will terminate after the next falling edge of CLK. During a HOLD# condition, the Serial Data Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (CLK) are ignored. The Chip Select (CS#) signal should be kept active (low) for the full duration of the HOLD# operation to avoid resetting the internal logic state of the device. Figure 4 Hold Condition Waveform FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 10 9. Write Protection Applications that use non-volatile memory must take into consideration the possibility of noise and other adverse system conditions that may compromise data integrity. To address this concern, the FM25Q16 provides several means to protect the data from inadvertent writes. Write Protect Features z z z z z z z Device resets when VCC is below threshold Time delay write disable after Power-up Write enable/disable instructions and automatic write disable after erase or program Software and Hardware (WP# pin) write protection using Status Register Write Protection using Power-down instruction Lock Down write protection for Status Register until the next power-up One Time Program (OTP) write protection for array and Security Sectors using Status Register. Upon power-up or at power-down, the FM25Q16 will maintain a reset condition while VCC is below the threshold value of VWI, (See “12.3 Power-up Timing” and Figure 66). While reset, all operations are disabled and no instructions are recognized. During power-up and after the VCC voltage exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status Register instructions. Note that the chip select pin (CS#) must track the VCC supply level at power-up until the VCC-min level and tVSL time delay is reached. If needed a pull-up resister on CS# can be used to accomplish this. After power-up the device is automatically placed in a write-disabled state with the Status Register Write Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-disabled state of 0. Software controlled write protection is facilitated using the Write Status Register instruction and setting the Status Register Protect (SRP0, SRP1) and Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits. These settings allow a portion as small as a 4KB sector or the entire memory array to be configured as read only. Used in conjunction with the Write Protect (WP#) pin, changes to the Status Register can be enabled or disabled under hardware control. See Status Register section for further information. Additionally, the Power-down instruction offers an extra level of write protection as all instructions are ignored except for the Release Power-down instruction. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 11 10. Status Register The Read Status Register-1 and Status Register-2 instructions can be used to provide status on the availability of the Flash memory array, if the device is write enabled or disabled, the state of write protection, Quad SPI setting, Security Sector lock status and Erase/Program Suspend status. The Write Status Register instruction can be used to configure the device write protection features, Quad SPI setting and Security Sector OTP lock. Write access to the Status Register is controlled by the state of the non-volatile Status Register Protect bits (SRP0, SRP1), the Write Enable instruction, and during Standard/Dual SPI operations, the WP# pin. Factory default for all Status Register bits are 0. Figure 5 Status Register-1 S15 S14 SUS CMP S13 S12 S11 S10 S9 S8 LB3 LB2 LB1 LB0 QE SRP1 SUSPEND STATUS COMPLEMENT PROTECT (non-volatile) SECURITY REGISTER LOCK BITS (non-volatile) QUAD ENABLE (non-volatile) STATUS REGISTER PROTECT 1 (non-volatile) Figure 6 Status Register-2 FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 12 10.1. WIP Bit WIP is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register or Erase/Program Security Sector instruction. During this time the device will ignore further instructions except for the Read Status Register and Erase/Program Suspend instruction (see tW, tPP, tSE, tBE, and tCE in “12.6 AC Electrical Characteristics”). When the program, erase or write status register (or security sector) instruction has completed, the WIP bit will be cleared to a 0 state indicating the device is ready for further instructions. 10.2. Write Enable Latch (WEL) Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to 1 after executing a Write Enable Instruction. The WEL status bit is cleared to 0 when the device is write disabled. A write disable state occurs upon power-up or after any of the following instructions: Write Disable, Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Erase Security Sector and Program Security Sector. 10.3. Block Protect Bits (BP2, BP1, BP0) The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4, S3, and S2) that provide Write Protection control and status. Block Protect bits can be set using the Write Status Register Instruction (see tW in “12.6 AC Electrical Characteristics”). All, none or a portion of the memory array can be protected from Program and Erase instructions (see Table 3 Status Register Memory Protection). The factory default setting for the Block Protection Bits is 0, none of the array protected. 10.4. Top/Bottom Block Protect (TB) The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB=0) or the Bottom (TB=1) of the array as shown in Table 3 Status Register Memory Protection table. The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction depending on the state of the SRP0, SRP1 and WEL bits. 10.5. Sector/Block Protect (SEC) The non-volatile Sector/Block Protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0) protect either 4KB Sectors (SEC=1) or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array as shown in Table 3 Status Register Memory Protection table. The default setting is SEC=0. 10.6. Complement Protect (CMP) The Complement Protect bit (CMP) is a non-volatile read/write bit in the status register (S14). It is used in conjunction with SEC, TB, BP2, BP1 and BP0 bits to provide more flexibility for the array protection. Once CMP is set to 1, previous array protection set by SEC, TB, BP2, BP1 and BP0 will be reversed. For instance, when CMP=0, a top 4KB sector can be protected while the rest of the array is not; when CMP=1, the top 4KB sector will become unprotected while the rest of the array become read-only. Please refer to Table 3 Status Register Memory Protection table for details. The default setting is CMP=0. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 13 10.7. Status Register Protect (SRP1, SRP0) The Status Register Protect bits (SRP1 and SRP0) are non-volatile read/write bits in the status register (S8 and S7). The SRP bits control the method of write protection: software protection, hardware protection, power supply lock-down or one time programmable (OTP) protection. Table 2 SRP1 SRP0 WP# 0 0 X 0 1 0 0 1 1 1 0 X 1 1 X Status Register Protect bits Status Register Description WP# pin has no control. The Status register can be written to after a Write Enable instruction, WEL=1. (Factory Default) Hardware When WP# pin is low the Status Register locked and can Protected not be written to. Hardware When WP# pin is high the Status register is unlocked and Unprotected can be written to after a Write Enable instruction, WEL=1. Power Supply Status Register is protected and can not be written to Lock-Down again until the next power-down, power-up cycle.(1) One Time Status Register is permanently protected and can not be Program written to. Software Protection Note: 1. When SRP1, SRP0 = (1, 0), a power-down, power-up cycle will change SRP1, SRP0 to (0, 0) state. 10.8. Erase/Program Suspend Status (SUS) The Suspend Status bit is a read only bit in the status register (S15) that is set to 1 after executing a Erase/Program Suspend (75h) instruction. The SUS status bit is cleared to 0 by Erase/Program Resume (7Ah) instruction as well as a power-down, power-up cycle. 10.9. Security Sector Lock Bits (LB3, LB2, LB1, LB0) The Security Register Lock Bits (LB3, LB2, LB1, LB0) are non-volatile One Time Program (OTP) bits in Status Register (S13, S12, S11, S10) that provide the write protect control and status to the Security Registers. The default state of LB3-0 is 0, Security Registers are unlocked. LB3-0 can be set to 1 individually using the Write Status Register instruction. LB3-0are One Time Programmable (OTP), once it’s set to 1, the corresponding 256-Byte Security Register will become read-only permanently. 10.10. Quad Enable (QE) The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that allows Quad SPI and QPI operation. When the QE bit is set to a 0 state (factory default), the WP# pin and HOLD# are enabled. When the QE bit is set to a 1, the Quad DQ2 and DQ3 pins are enabled, and WP# and HOLD# functions are disabled. QE bit is required to be set to a 1 before issuing an “Enable QPI (38h)” to switch the device from Standard/Dual/Quad SPI to QPI, otherwise the command will be ignored. When the device is in QPI mode, QE bit will remain to be 1. A “Write Status Register” command in QPI mode cannot change QE bit from a “1” to a “0”. WARNING: If the WP# or HOLD# pins are tied directly to the power supply or ground during standard SPI or Dual SPI operation, the QE bit should never be set to a 1. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 14 10.11. Status Register Memory Protection Table 3 Status Register Memory Protection STATUS REGISTER CMP SEC TB FM25Q16 (16M-BIT) MEMORY PROTECTION BP2 BP1 BP0 PROTECTED PROTECTED PROTECTED PROTECTED BLOCK(S) ADDRESSES DENSITY PORTION 0 X X 0 0 0 NONE 0 0 0 0 0 1 31 0 0 0 0 1 0 30 and 31 0 0 0 0 1 1 28 thru 31 0 0 0 1 0 0 24 thru 31 0 0 0 1 0 1 16 thru 31 0 0 1 0 0 1 0 0 0 1 0 1 0 0 and 1 0 0 1 0 1 1 0 thru 3 0 0 1 1 0 0 0 thru 7 0 0 1 1 0 1 0 thru 15 0 X X 1 1 X 0 thru 31 0 1 0 0 0 1 31 0 1 0 0 1 0 31 0 1 0 0 1 1 31 0 1 0 1 0 X 31 0 1 1 0 0 1 0 0 1 1 0 1 0 0 0 1 1 0 1 1 0 0 1 1 1 0 X 0 1 X X 0 0 0 0 thru 31 1 0 0 0 0 1 0 thru 30 FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 NONE 1F0000h – 1FFFFFh 1E0000h – 1FFFFFh 1C0000h – 1FFFFFh 180000h – 1FFFFFh 100000h – 1FFFFFh 000000h – 00FFFFh 000000h – 01FFFFh 000000h – 03FFFFh 000000h – 07FFFFh 000000h – 0FFFFFh 000000h – 1FFFFFh 1FF000h – 1FFFFFh 1FE000h – 1FFFFFh 1FC000h – 1FFFFFh 1F8000h – 1FFFFFh 000000h – 000FFFh 000000h – 001FFFh 000000h – 003FFFh 000000h – 007FFFh 000000h – 1FFFFFh 000000h – 1EFFFFh NONE NONE 64KB Upper 1/32 128KB Upper 1/16 256KB Upper 1/8 512KB Upper 1/4 1MB Upper 1/2 64KB Lower 1/32 128KB Lower 1/16 256KB Lower 1/8 512KB Lower 1/4 1MB Lower 1/2 2MB ALL 4KB U - 1/512 8KB U - 1/256 16KB U - 1/128 32KB U - 1/64 4KB L - 1/512 8KB L - 1/256 16KB L - 1/128 32KB L - 1/64 ALL ALL 1,984KB Lower 31/32 Datasheet 15 STATUS REGISTER CMP SEC TB FM25Q16 (16M-BIT) MEMORY PROTECTION BP2 BP1 BP0 PROTECTED PROTECTED PROTECTED PROTECTED BLOCK(S) ADDRESSES DENSITY PORTION 000000h – 0 and 29 1,920KB Lower 15/16 1DFFFFh 000000h – 0 thru 27 1,792KB Lower 7/8 1BFFFFh 000000h – 0 thru 23 1,536KB Lower 3/4 17FFFFh 000000h – 0 thru 15 1MB Lower 1/2 1FFFFFh 010000h – 1 thru 31 1,984KB Upper 31/32 1FFFFFh 020000h – 2 and 31 1,920KB Upper 15/16 1FFFFFh 040000h – 4 thru 31 1,792KB Upper 7/8 1FFFFFh 080000h – 8 thru 31 1,536KB Upper 3/4 1FFFFFh 100000h – 16 thru 31 1MB Upper 1/2 1FFFFFh NONE NONE NONE NONE 1 0 0 0 1 0 1 0 0 0 1 1 1 0 0 1 0 0 1 0 0 1 0 1 1 0 1 0 0 1 1 0 1 0 1 0 1 0 1 0 1 1 1 0 1 1 0 0 1 0 1 1 0 1 1 X X 1 1 X 1 1 0 0 0 1 0 thru 31 1 1 0 0 1 0 0 thru 31 1 1 0 0 1 1 0 thru 31 1 1 0 1 0 X 0 thru 31 1 1 1 0 0 1 0 thru 31 1 1 1 0 1 0 0 thru 31 1 1 1 0 1 1 0 thru 31 1 1 1 1 0 X 0 thru 31 FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 000000h – 1FEFFFh 000000h – 1FDFFFh 000000h – 1FBFFFh 000000h – 1F7FFFh 001000h – 1FFFFFh 002000h – 1FFFFFh 004000h – 1FFFFFh 008000h – 1FFFFFh 2,044KB L - 511/512 2,040KB L - 255/256 2,032KB L - 127/128 2,016KB L - 63/64 2,044KB U - 511/512 2,040KB U - 255/256 2,032KB U - 127/128 2,016KB U - 63/64 Datasheet 16 11. Instructions The Standard/Dual/Quad SPI instruction set of the FM25Q16 consists of 38 basic instructions that are fully controlled through the SPI bus (see Table 5~Table 7 Instruction Set). Instructions are initiated with the falling edge of Chip Select (CS#). The first byte of data clocked into the DI input provides the instruction code. Data on the DI input is sampled on the rising edge of clock with most significant bit (MSB) first. The QPI instruction set of the FM25Q16 consists of 25 basic instructions that are fully controlled through the SPI bus (see Table 8 Instruction Set). Instructions are initiated with the falling edge of Chip Select (CS#). The first byte of data clocked through DQ[3:0] pins provides the instruction code. Data on all four DQ pins are sampled on the rising edge of clock with most significant bit (MSB) first. All QPI instructions, addresses, data and dummy bytes are using all four DQ pins to transfer every byte of data with every two serial clocks (CLK). Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the rising edge of edge CS#. Clock relative timing diagrams for each instruction are included in Figure 7 through Figure 70. All read instructions can be completed after any clocked bit. However, all instructions that Write, Program or Erase must complete on a byte boundary (CS# driven high after a full 8-bits have been clocked) otherwise the instruction will be ignored. This feature further protects the device from inadvertent writes. Additionally, while the memory is being programmed or erased, or when the Status Register is being written, all instructions except for Read Status Register will be ignored until the program or erase cycle has completed. 11.1. Manufacturer and Device Identification Table 4 OP Code Manufacturer and Device Identification MF7-MF0 ABh 90h, 92h, 94h 9Fh FM25Q16 16M-BIT SERIAL FLASH MEMORY ID15-ID0 ID7-ID0 14h 14h A1h A1h 4015h Ver 1.1 Datasheet 17 11.2. Standard SPI Instructions Set Standard SPI Instructions Set (1) Table 5 INSTRUCTION BYTE 1 NAME CLOCK NUMBER (0-7) Write Enable 06h Volatile SR Write 50h Enable Write Disable 04h Read Status 05h Register-1 Read Status 35h Register-2 Write Status Register 01h Page Program 02h Sector Erase (4KB) 20h Block Erase (32KB) 52h Block Erase (64KB) D8h Chip Erase C7h/60h Erase / Program 75h Suspend Erase / Program 7Ah Resume Power-down B9h Read Data 03h Fast Read 0Bh Release Powerdown ABh / ID(4) Manufacturer/Device 90h ID(4) JEDEC ID(4) 9Fh Read SFDP Register Read Unique ID(5) Erase Security Sectors(6) Program Security Sectors(6) Read Security Sectors(6) Enable QPI Enable Reset Reset 5Ah 4Bh BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6 (8-15) (16-23) (24-31) (32-39) (40-47) (S7-S0) A23-A16 A23-A16 A23-A16 A23-A16 (S15-S8) A15-A8 A15-A8 A15-A8 A15-A8 A7-A0 A7-A0 A7-A0 A7-A0 D7-D0 D7-D0(3) A23-A16 A23-A16 A15-A8 A15-A8 A7-A0 A7-A0 (D7-D0) dummy (S7-S0)(2) (S15-S8)(2) dummy dummy dummy dummy dummy 00h (ID15(MF7-MF0) ID8) Manufacturer Memory Type 00h 00h dummy dummy (ID7-ID0) (D7-D0) (2) (MF7-MF0) (ID7-ID0) dummy dummy (D7-D0) (UID63-UID0) (ID7-ID0) Capacity A7-A0 dummy 44h A23-A16 A15-A8 A7-A0 42h A23-A16 A15-A8 A7-A0 D7-D0 D7-D0(3) 48h A23-A16 A15-A8 A7-A0 dummy (D7-D0) 38h 66h 99h FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 18 11.3. Dual SPI Instructions Set Table 6 INSTRUCTION NAME CLOCK NUMBER Fast Read Dual Output 11.4. BYTE 1 BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6 (0-7) (8-15) (16-23) (24-31) (32-39) (40-47) 3Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0, …)(8) Fast Read Dual I/O BBh A23-A8(7) A7-A0, M7M0 (7) (D7D0, …)(8) Manufacturer/Device ID by Dual I/O(4) 92h A23-A8(7) A7-A0, M7M0(7) (MF7-MF0, ID7-ID0) Quad SPI Instructions Set Table 7 INSTRUCTION NAME CLOCK NUMBER Quad SPI Instructions Set BYTE 1 BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6 (0-7) (8-15) (16-23) (24-31) (40-47) Quad Page Program 32h A23-A16 A15-A8 A7-A0 (32-39) D7D0, …(10) Fast Read Quad Output 6Bh A23-A16 A15-A8 A7-A0 Fast Read Quad I/O EBh A23-A0, M7-M0(9) A23-A0, M7-M0(9) A23-A0, M7-M0(9) xxxxxx, W6-W4(9) (xxxx, D7D0)(11) (xx, D7D0)(12) (D7D0, …)(10) (D7D0, …)(10) (D7D0, …)(10) Word Read Quad I/O(13) Octal Word Read Quad I/O(14) 11.5. Dual SPI Instructions Set E7h E3h Set Burst with Wrap 77h Manufacture/Device ID by Quad I/O(4) 94h D7-D0, …(3) dummy (D7-D0, …)(10) xxxx, (MF7(MF7-MF0, MF0, ID7ID7-ID0, …) ID0) A23-A0, M7-M0(9) QPI Instructions Set Table 8 INSTRUCTION NAME CLOCK NUMBER Write Enable Volatile SR Write Enable Write Disable Read Status Register-1 Read Status Register-2 Write Status QPI Instructions Set (15) BYTE 1 BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6 (0,1) 06h (2,3) (4,5) (6,7) (8,9) (10,11) 50h 04h 05h (S7-S0)(2) 35h (S15-S8)(2) 01h (S7-S0) FM25Q16 16M-BIT SERIAL FLASH MEMORY (S15-S8) Ver 1.1 Datasheet 19 INSTRUCTION BYTE 1 NAME Register Page Program 02h Sector Erase (4KB) 20h Block Erase (32KB) 52h Block Erase (64KB) D8h Chip Erase C7h/60h Erase / Program 75h Suspend Erase / Program 7Ah Resume Power-down B9h Set Read C0h Parameters Fast Read 0Bh Burst Read with 0Ch Wrap(17) Fast Read Quad I/O EBh Release Powerdown ABh / ID(4) Manufacturer/Device 90h ID(4) JEDEC ID(4) 9Fh BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6 A23-A16 A23-A16 A23-A16 A23-A16 A15-A8 A15-A8 A15-A8 A15-A8 A7-A0 A7-A0 A7-A0 A7-A0 D7-D0(10) D7-D0(3) A15-A8 A7-A0 dummy(16) (D7-D0) A7-A0 (16) (D7-D0) (16) (D7-D0) P7-P0 A23-A16 A23-A16 A15-A8 dummy A23-A16 A15-A8 A7-A0 dummy dummy dummy (ID7-ID0)(2) dummy dummy 00h (MF7-MF0) (MF7-MF0) Manufacturer M7-M0 (ID7-ID0) (ID15-ID8) (ID7-ID0) Memory Capacity Type Disable QPI FFh Enable Reset 66h Reset 99h Notes: 1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data output from the device on either 1, 2 or 4 DQ pins. 2. The Status Register contents and Device ID will repeat continuously until CS# terminates the instruction. 3. At least one byte of data input is required for Page Program, Quad Page Program and Program Security Sectors, up to 256 bytes of data input. If more than 256 bytes of data are sent to the device, the addressing will wrap to the beginning of the page and overwrite previously sent data. 4. See Table 4 Manufacturer and Device Identification table for device ID information. 5. This feature is available upon special order. Please contact Shanghai Fudan Microelectronics Group Co., Ltd for details. 6. Security Sector Address: Security Sector 1: A23-A16 = 00h; A15-A8 = 10h; A7-A0 = byte address Security Sector 2: A23-A16 = 00h; A15-A8 = 20h; A7-A0 = byte address Security Sector 3: A23-A16 = 00h; A15-A8 = 30h; A7-A0 = byte address 7. Dual SPI address input format: DQ0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0 DQ1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1 8. Dual SPI data output format: DQ0 = (D6, D4, D2, D0) DQ1 = (D7, D5, D3, D1) 9. Quad SPI address input format: Set Burst with Wrap input format: DQ0 = x, x, x, x, x, x, W4, x DQ0 = A20, A16, A12, A8, A4, A0, M4, M0 DQ1 = x, x, x, x, x, x, W5, x DQ1 = A21, A17, A13, A9, A5, A1, M5, M1 FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 20 10. 11. 12. 13. 14. 15. DQ2 = A22, A18, A14, A10, A6, A2, M6, M2 DQ2 = x, x, x, x, x, x, W6, x DQ3 = x, x, x, x, x, x, x, x DQ3 = A23, A19, A15, A11, A7, A3, M7, M3 Quad SPI data input/output format: DQ0 = (D4, D0, …) DQ1 = (D5, D1, …..) DQ2 = (D6, D2, …..) DQ3 = (D7, D3, …..) Fast Read Quad I/O data output format: DQ0 = (x, x, x, x, D4, D0, D4, D0) DQ1 = (x, x, x, x, D5, D1, D5, D1) DQ2 = (x, x, x, x, D6, D2, D6, D2) DQ3 = (x, x, x, x, D7, D3, D7, D3) Word Read Quad I/O data output format: DQ0 = (x, x, D4, D0, D4, D0, D4, D0) DQ1 = (x, x, D5, D1, D5, D1, D5, D1) DQ2 = (x, x, D6, D2, D6, D2, D6, D2) DQ3 = (x, x, D7, D3, D7, D3, D7, D3) For Word Read Quad I/O, the lowest address bit must be 0. (A0 = 0) For Octal Word Read Quad I/O, the lowest four address bits must be 0. (A3, A2, A1, A0 = 0) QPI Command Address, Data input/output format: CLK# 0 1 2 3 4 5 6 7 8 9 10 11 C4 C0 A20 A16 A12 A8 A4 A0 D4 D0 D4 D0 DQ0 C5 C1 A21 A17 A13 A9 A5 A1 D5 D1 D5 D1 DQ1 C6 C2 A22 A18 A14 A10 A6 A2 D6 D2 D6 D2 DQ2 C7 C3 A23 A19 A15 A11 A7 A3 D7 D3 D7 D3 DQ3 16. The number of dummy clocks for QPI Fast Read, QPI Fast Read Quad I/O & QPI Burst Read with Wrap is controlled by read parameter P7 ~ P4. 17. The wrap around length for QPI Burst Read with Wrap is controlled by read parameter P3 ~ P0. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 21 11.6. Write Enable (WREN) (06h) The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit in the Status Register to a 1. The WEL bit must be set prior to every Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register and Erase/Program Security Sectors instruction. The Write Enable (WREN) instruction is entered by driving CS# low, shifting the instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then driving CS# high. Figure 7 Write Enable Instruction for SPI Mode (left) or QPI Mode (right) 11.7. Write Enable for Volatile Status Register (50h) The non-volatile Status Register bits described in section 10.1 can also be written to as volatile bits. This gives more flexibility to change the system configuration and memory protection schemes quickly without waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. To write the volatile values into the Status Register bits, the Write Enable for Volatile Status Register (50h) instruction must be issued prior to a Write Status Register (01h) instruction. Write Enable for Volatile Status Register instruction (Figure 8) will not set the Write Enable Latch (WEL) bit, it is only valid for the Write Status Register instruction to change the volatile Status Register bit values. Figure 8 Write Enable for Volatile Status Register Instruction for SPI Mode (left) or QPI Mode (right) FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 22 11.8. Write Disable (WRDI) (04h) The Write Disable (WRDI) instruction (Figure 9) resets the Write Enable Latch (WEL) bit in the Status Register to a 0. The Write Disable (WRDI) instruction is entered by driving CS# low, shifting the instruction code “04h” into the DI pin and then driving CS# high. Note that the WEL bit is automatically reset after Power-up and upon completion of the Write Status Register, Erase/Program Security Sectors, Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase and Reset instructions. Figure 9 Write Disable Instruction for SPI Mode (left) or QPI Mode (right) 11.9. Read Status Register-1 (RDSR1) (05h) and Read Status Register-2 (RDSR2) (35h) The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction is entered by driving CS# low and shifting the instruction code “05h” for Status Register-1 or “35h” for Status Register-2 into the DI pin on the rising edge of CLK. The status register bits are then shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown in Figure 10. The Status Register bits are shown in Figure 5 and Figure 6 and include the WIP, WEL, BP2-BP0, TB, SEC, SRP0, SRP1, QE, LB3-0, CMP and SUS bits. The Read Status Register instruction may be used at any time, even while a Program, Erase or Write Status Register cycle is in progress. This allows the WIP status bit to be checked to determine when the cycle is complete and if the device can accept another instruction. The Status Register can be read continuously, as shown in Figure 11. The instruction is completed by driving CS# high. CS# Mode 3 CLK 0 1 2 3 4 5 6 8 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 1 0 Mode 0 Instruction (05h/35h) DI (DQ0) Status Register 1/2 out D0 (DQ1) Status Register 1/2 out High Impedance 7 6 5 4 3 2 1 0 7 6 5 4 3 2 7 =MSB Figure 10 Read Status Register Instruction (SPI Mode) FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 23 Figure 11 Read Status Register Instruction (QPI Mode) 11.10. Write Status Register (WRSR) (01h) The Write Status Register (WRSR) instruction allows the Status Register to be written. Only nonvolatile Status Register bits SRP0, SEC, TB, BP2, BP1, BP0 (bits 7 thru 2 of Status Register-1) and CMP, LB3, LB2, LB1, LB0 QE, SRP1 (bits 14 thru 8 of Status Register-2) can be written to. All other Status Register bit locations are read-only and will not be affected by the Write Status Register (WRSR) instruction. LB3-0 are non-volatile OTP bits, once it is set to 1, it can not be cleared to 0. The Status Register bits are shown in Figure 5 and Figure 6, and described in 10 Status Register To write non-volatile Status Register bits, a standard Write Enable (06h) instruction must previously have been executed for the device to accept the Write Status Register (WRSR) instruction (Status Register bit WEL must equal 1). Once write enabled, the instruction is entered by driving CS# low, sending the instruction code “01h”, and then writing the status register data byte as illustrated in Figure 12 and Figure 13. To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) instruction must have been executed prior to the Write Status Register (WRSR) instruction (Status Register bit WEL remains 0). However, SRP1 and LB3, LB2, LB1, LB0, can not be changed from “1” to “0” because of the OTP protection for these bits. Upon power off or the execution of a “Reset (99h)” instruction, the volatile Status Register bit values will be lost, and the non-volatile Status Register bit values will be restored. To complete the Write Status Register (WRSR) instruction, the CS# pin must be driven high after the eighth or sixteenth bit of data that is clocked in. If this is not done the Write Status Register (WRSR) instruction will not be executed. If CS# is driven high after the eighth clock the CMP, QE and SRP1 bits will be cleared to 0. During non-volatile Status Register write operation (06h combined with 01h), after CS# is driven high, the self-timed Write Status Register cycle will commence for a time duration of tW (See “12.6 AC Electrical Characteristics”). While the Write Status Register cycle is in progress, the Read Status Register instruction may still be accessed to check the status of the WIP bit. The WIP bit is a 1 during the Write Status Register cycle and a 0 when the cycle is finished and ready to accept other instructions again. After the Write Status Register cycle has finished, the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 24 During volatile Status Register write operation (50h combined with 01h), after CS# is driven high, the Status Register bits will be refreshed to the new values within the time period of tSHSL2 (See “12.6 AC Electrical Characteristics”). WIP bit will remain 0 during the Status Register bit refresh period. The Write Status Register (WRSR) instruction can be used in both SPI mode and QPI mode. However, the QE bit cannot be written to when the device is in the QPI mode, because QE=1 is required for the device to enter and operate in the QPI mode. Figure 12 Write Status Register Instruction (SPI Mode) Figure 13 Write Status Register Instruction (QPI Mode) 11.11. Read Data (03h) The Read Data instruction allows one or more data bytes to be sequentially read from the memory. The instruction is initiated by driving the CS# pin low and then shifting the instruction code “03h” followed by a 24-bit address A23-A0 into the DI pin. The code and address bits are latched on the rising edge of the CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically incremented to the next higher address after each byte of data is shifted out allowing for a continuous stream of data. This FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 25 means that the entire memory can be accessed with a single instruction as long as the clock continues. The instruction is completed by driving CS# high. The Read Data instruction sequence is shown in Figure 14. If a Read Data instruction is issued while an Erase, Program or Write cycle is in process (WIP =1) the instruction is ignored and will not have any effect on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR (see “12.6 AC Electrical Characteristics”). The Read Data (03h) instruction is only supported in Standard SPI mode. Figure 14 Read Data Instruction (SPI Mode only) 11.12. Fast Read (0Bh) The Fast Read instruction is similar to the Read Data instruction except that it can operate at the highest possible frequency of FR (see “12.6 AC Electrical Characteristics”). This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 15. The dummy clocks allow the devices internal circuits additional time for setting up the initial address. During the dummy clocks the data value on the DI pin is a “don’t care”. CS# Mode 3 CLK 0 1 Mode 0 2 3 4 5 6 8 7 9 10 Instruction (0Bh) 28 29 30 31 3 2 1 0 45 46 47 48 49 50 0 7 6 5 24-Bit Address DI (DQ0) 23 22 21 41 42 43 High Impedance D0 (DQ1) =MSB CS# 31 32 33 34 35 36 37 38 39 40 44 51 52 53 54 55 2 1 0 CLK Dummy Clocks DI (DQ0) D0 (DQ1) 0 High Impedance Data Out 2 Data Out 1 7 6 5 4 3 2 1 4 3 7 Figure 15 Fast Read Instruction (SPI Mode) FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 26 Fast Read (0Bh) in QPI Mode The Fast Read instruction is also supported in QPI mode. When QPI mode is enabled, the number of dummy clocks is configured by the “Set Read Parameters (C0h)” instruction to accommodate wide range applications with different needs for either maximum Fast Read frequency or minimum data access latency. Depending on the Read Parameter Bits P[5:4] setting, the number of dummy clocks can be configured as either 2, 4, 6 or 8. The default number of dummy clocks upon power up or after a Reset instruction is 2. Figure 16 Fast Read Instruction (QPI Mode) 11.13. Fast Read Dual Output (3Bh) The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except that data is output on two pins; DQ0 and DQ1. This allows data to be transferred from the FM25Q16 at twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly downloading code from Flash to RAM upon power-up or for applications that cache code-segments to RAM for execution. Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest possible frequency of FR (see “12.6 AC Electrical Characteristics”). This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 17. The dummy clocks allow the device's internal circuits additional time for setting up the initial address. The input data during the dummy clocks is “don’t care”. However, the DQ0 pin should be highimpedance prior to the falling edge of the first data out clock. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 27 Figure 17 Fast Read Dual Output Instruction (SPI Mode only) 11.14. Fast Read Quad Output (6Bh) The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh) instruction except that data is output on four pins, DQ0, DQ1, DQ2, and DQ3. A Quad enable of Status Register-2 must be executed before the device will accept the Fast Read Quad Output Instruction (Status Register bit QE must equal 1). The Fast Read Quad Output Instruction allows data to be transferred from the FM25Q16 at four times the rate of standard SPI devices. The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see “12.6 AC Electrical Characteristics”). This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 18. The dummy clocks allow the device's internal circuits additional time for setting up the initial address. The input data during the dummy clocks is “don’t care”. However, the DQ pins should be high-impedance prior to the falling edge of the first data out clock. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 28 CS# 0 Mode 3 CLK 1 2 3 4 5 6 7 8 9 10 28 29 30 31 2 1 0 Mode 0 Instruction (6Bh) 24-Bit Address DQ0 23 22 21 3 High Impedance DQ1 High Impedance DQ2 High Impedance DQ3 =MSB CS# 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 CLK IO0 switches from Input to Output Dummy Clocks DQ0 DQ1 DQ2 DQ3 0 High Impedance High Impedance High Impedance 4 0 4 0 4 0 4 0 4 5 1 5 1 5 1 5 1 5 6 2 6 2 6 2 6 2 6 7 3 7 3 7 3 7 3 7 Byte1 Byte2 Byte3 Byte4 Figure 18 Fast Read Quad Output Instruction (SPI Mode only) 11.15. Fast Read Dual I/O (BBh) The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two I/O pins, DQ0 and DQ1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to input the Address bits A23-A0 two bits per clock. This reduced instruction overhead may allow for code execution (XIP) directly from the Dual SPI in some applications. Fast Read Dual I/O with “Continuous Read Mode” The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0) after the input Address bits A23-A0, as shown in Figure 19. The upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the DQ pins should be high-impedance prior to the falling edge of the first data out clock. If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O instruction (after CS# is raised and then lowered) does not require the BBh instruction code, as shown in Figure 20. This reduces the instruction sequence by eight clocks and allows the Read address FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 29 to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next instruction (after CS# is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. It is recommended to input FFFFh on DQ0 for the next instruction (16 clocks), to ensure M4 = 1 and return the device to normal operation. CS# Mode 3 CLK 0 1 2 3 4 5 6 8 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Mode 0 Instruction (BBh) A23-16 DI (DQ0) D0 (DQ1) A15-8 A7-0 M7-0 22 20 18 16 14 12 10 8 6 4 2 0 6 4 2 0 23 21 19 17 15 13 11 9 7 5 3 1 7 5 3 1 33 34 35 36 37 38 39 =MSB CS# 23 24 25 26 27 28 29 30 31 32 CLK IOs switch from Input to Output DI (DQ0) 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 D0 (DQ1) 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte 1 Byte 2 Byte 3 Byte 4 Figure 19 Fast Read Dual I/O Instruction (Initial instruction or previous M5-4 ≠ 10, SPI Mode only) FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 30 Figure 20 Fast Read Dual I/O Instruction (Previous instruction set M5-4 = 10, SPI Mode only) 11.16. Fast Read Quad I/O (EBh) The Fast Read Quad I/O (EBh) instruction is similar to the Fast Read Dual I/O (BBh) instruction except that address and data bits are input and output through four pins DQ0, DQ1, DQ2 and DQ3 and four Dummy clocks are required in SPI mode prior to the data output. The Quad I/O dramatically reduces instruction overhead allowing faster random access for code execution (XIP) directly from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to enable the Fast Read Quad I/O Instruction. Fast Read Quad I/O with “Continuous Read Mode” The Fast Read Quad I/O instruction can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0) after the input Address bits A23-A0, as shown in Figure 21. The upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the DQ pins should be high-impedance prior to the falling edge of the first data out clock. If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after CS# is raised and then lowered) does not require the EBh instruction code, as shown in Figure 22. This reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next instruction (after CS# is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. It is recommended to input FFh on DQ0 for the next instruction (8 clocks), to ensure M4 = 1 and return the device to normal operation. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 31 Figure 21 Fast Read Quad I/O Instruction (Initial instruction or previous M5-4≠10, SPI Mode) Figure 22 Fast Read Quad I/O Instruction (Previous instruction set M5-4 = 10, SPI Mode) Fast Read Quad I/O with “8/16/32/64-Byte Wrap Around” in Standard SPI mode The Fast Read Quad I/O instruction can also be used to access a specific portion within a page by issuing a “Set Burst with Wrap” (77h) command prior to EBh. The “Set Burst with Wrap” (77h) command can either enable or disable the “Wrap Around” feature for the following EBh commands. When “Wrap Around” is enabled, the data being accessed can be limited to either a 8, 16, 32 or 64-byte section of a 256-byte page. The output data starts at the initial address specified in the instruction, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary automatically until CS# is pulled high to terminate the command. The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap around section within a page. See “11.19 Set Burst with Wrap (77h)” for detail descriptions. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 32 Fast Read Quad I/O (EBh) in QPI Mode The Fast Read Quad I/O instruction is also supported in QPI mode, as shown in Figure 23. When QPI mode is enabled, the number of dummy clocks is configured by the “Set Read Parameters (C0h)” instruction to accommodate a wide range application with different needs for either maximum Fast Read frequency or minimum data access latency. Depending on the Read Parameter Bits P[5:4] setting, the number of dummy clocks can be configured as either 2, 4, 6 or 8. The default number of dummy clocks upon power up or after a Reset instruction is 2. In QPI mode, the “Continuous Read Mode” bits M7-0 are also considered as dummy clocks. In the default setting, the data output will follow the Continuous Read Mode bits immediately. “Continuous Read Mode” feature is also available in QPI mode for Fast Read Quad I/O instruction. Please refer to the description on previous pages. “Wrap Around” feature is not available in QPI mode for Fast Read Quad I/O instruction. To perform a read operation with fixed data length wrap around in QPI mode, a dedicated “Burst Read with Wrap” (0Ch) instruction must be used. Please refer to “11.40 Burst Read with Wrap (0Ch)” for details. Figure 23 Fast Read Quad I/O Instruction (Initial instruction or previous M5-4≠10, QPI Mode) 11.17. Word Read Quad I/O (E7h) The Word Read Quad I/O (E7h) instruction is similar to the Fast Read Quad I/O (EBh) instruction except that the lowest Address bit (A0) must equal 0 and only two Dummy clock are required prior to the data output. The Quad I/O dramatically reduces instruction overhead allowing faster random access for code execution (XIP) directly from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to enable the Word Read Quad I/O Instruction. Word Read Quad I/O with “Continuous Read Mode” The Word Read Quad I/O instruction can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0) after the input Address bits A23-A0, as shown in Figure 24. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 33 The upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the DQ pins should be high-impedance prior to the falling edge of the first data out clock. If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after CS# is raised and then lowered) does not require the E7h instruction code, as shown in Figure 25. This reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next instruction (after CS# is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. It is recommended to input FFh on DQ0 for the next instruction (8 clocks), to ensure M4 = 1 and return the device to normal operation. CS# Mode 3 CLK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Mode 0 Instruction (E7h) IOs switch from Input to Output A23-16 A15-8 A7-0 M7-0 Dummy DQ0 20 16 12 8 4 0 4 0 4 0 4 0 4 DQ1 21 17 13 9 5 1 5 1 5 1 5 1 5 DQ2 22 18 14 10 6 2 6 2 6 2 6 2 6 DQ3 23 19 15 11 7 3 7 3 7 3 7 3 7 Byte1 Byte2 Byte3 Figure 24 Word Read Quad I/O Instruction (Initial instruction or previous M5-4 ≠ 10, SPI Mode only) Figure 25 Word Read Quad I/O Instruction (Previous instruction set M5-4 = 10, SPI Mode only) Word Read Quad I/O with “8/16/32/64-Byte Wrap Around” in Standard SPI mode The Word Read Quad I/O instruction can also be used to access a specific portion within a page by issuing a “Set Burst with Wrap” (77h) command prior to E7h. The “Set Burst with Wrap” (77h) FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 34 command can either enable or disable the “Wrap Around” feature for the following E7h commands. When “Wrap Around” is enabled, the data being accessed can be limited to either a 8, 16, 32 or 64-byte section of a 256-byte page. The output data starts at the initial address specified in the instruction, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary automatically until CS# is pulled high to terminate the command. The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap around section within a page. See “11.19 Set Burst with Wrap (77h)” for detail descriptions. 11.18. Octal Word Read Quad I/O (E3h) The Octal Word Read Quad I/O (E3h) instruction is similar to the Fast Read Quad I/O (EBh) instruction except that the lower four Address bits (A0, A1, A2, A3) must equal 0. As a result, the dummy clocks are not required, which further reduces the instruction overhead allowing even faster random access for code execution (XIP). The Quad Enable bit (QE) of Status Register-2 must be set to enable the Octal Word Read Quad I/O Instruction. Octal Word Read Quad I/O with “Continuous Read Mode” The Octal Word Read Quad I/O instruction can further reduce instruction overhead through setting the “Continuous Read Mode” bits M7-M0 after the input Address bits A23-A0, as shown in Figure 26. The upper nibble of the (M7-4) controls the length of the next Octal Word Read Quad I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the DQ pins should be high-impedance prior to the falling edge of the first data out clock. If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after CS# is raised and then lowered) does not require the E3h instruction code, as shown in Figure 27. This reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1, 0), the next instruction (after CS# is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. It is recommended to input FFh on DQ0 for the next instruction (8 clocks), to ensure M4 = 1 and return the device to normal operation. Figure 26 Octal Word Read Quad I/O Instruction (Initial instruction or previous M5-4 ≠ 10, SPI Mode only) FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 35 CS# Mode 3 CLK 0 1 2 3 4 5 6 8 7 9 10 11 12 13 Mode 0 IOs switch from Input to Output A23-16 A15-8 A7-0 M7-0 DQ0 20 16 12 8 4 0 4 0 4 0 4 0 4 0 4 DQ1 21 17 13 9 5 1 5 1 5 1 5 1 5 1 5 DQ2 22 18 14 10 6 2 6 2 6 2 6 2 6 2 6 DQ3 23 19 15 11 7 3 7 3 7 3 7 3 7 3 7 Byte1 Byte2 Byte3 Byte4 Figure 27 Octal Word Read Quad I/O Instruction (Previous instruction set M5-4 = 10, SPI Mode only) 11.19. Set Burst with Wrap (77h) In Standard SPI mode, the Set Burst with Wrap (77h) instruction is used in conjunction with “Fast Read Quad I/O” and “Word Read Quad I/O” instructions to access a fixed length of 8/16/32/64byte section within a 256-byte page. Certain applications can benefit from this feature and improve the overall system code execution performance. Similar to a Quad I/O instruction, the Set Burst with Wrap instruction is initiated by driving the CS# pin low and then shifting the instruction code “77h” followed by 24 dummy bits and 8 “Wrap Bits”, W7-0. The instruction sequence is shown in Figure 28. Wrap bit W7 and the lower nibble W3-0 are not used. W6, W5 00 01 10 11 W4 = 0 Wrap Around Wrap Length Yes Yes Yes Yes 8-byte 16-byte 32-byte 64-byte W4 =1 (default) Wrap Around Wrap Length No No No No N/A N/A N/A N/A Once W6-4 is set by a Set Burst with Wrap instruction, all the following “Fast Read Quad I/O” and “Word Read Quad I/O” instructions will use the W6-4 setting to access the 8/16/32/64-byte section within any page. To exit the “Wrap Around” function and return to normal read operation, another Set Burst with Wrap instruction should be issued to set W4 = 1. The default value of W4 upon power on is 1. In the case of a system Reset while W4 = 0, it is recommended that the controller issues a Set Burst with Wrap instruction to reset W4 = 1 prior to any normal Read instructions since FM25Q16 does not have a hardware Reset Pin. In QPI mode, the “Burst Read with Wrap (0Ch)” instruction should be used to perform the Read operation with “Wrap Around” feature. The Wrap Length set by W5-4 in Standard SPI mode is still FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 36 valid in QPI mode and can also be re-configured by “Set Read Parameters (C0h)” instruction. Refer to “11.39 Set Read Parameters (C0h)” and “11.40 Burst Read with Wrap (0Ch)” for details. Figure 28 Set Burst with Wrap Instruction (SPI Mode only) 11.20. Page Program (02h) The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed at previously erased (FFh) memory locations. A Write Enable instruction must be executed before the device will accept the Page Program Instruction (Status Register bit WEL= 1). The instruction is initiated by driving the CS# pin low then shifting the instruction code “02h” followed by a 24-bit address A23-A0 and at least one data byte, into the DI pin. The CS# pin must be held low for the entire length of the instruction while data is being sent to the device. The Page Program instruction sequence is shown in Figure 29 and Figure 30. If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits) should be set to 0. If the last address byte is not zero, and the number of clocks exceeds the remaining page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a partial page) can be programmed without having any effect on other bytes within the same page. One condition to perform a partial page program is that the number of clocks can not exceed the remaining page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the page and overwrite previously sent data. As with the write and erase instructions, the CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Page Program instruction will not be executed. After CS# is driven high, the self-timed Page Program instruction will commence for a time duration of tPP (See “12.6 AC Electrical Characteristics”). While the Page Program cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of the WIP bit. The WIP bit is a 1 during the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 37 Figure 29 Page Program Instruction (SPI Mode) Figure 30 Page Program Instruction (QPI Mode) 11.21. Quad Input Page Program (32h) The Quad Page Program instruction allows up to 256 bytes of data to be programmed at previously erased (FFh) memory locations using four pins: DQ0, DQ1, DQ2, and DQ3. The Quad Page Program can improve performance for PROM Programmer and applications that have slow clock speeds = 1 / FR or 1/fR ; 2. This parameter is characterized and is not 100% tested. SPEC TYP MAX 1.5 4 5 5 5 5 3 ns ns ns ns ns ns ns ns ns ns ns µs 3 µs 1.8 µs 20 20 15 5 0.3 1.8 2 64 µs µs ms ms s s s s 12 7 6 20 100 10 1.5 0.09 0.3 0.5 16 UNIT CS# tCH CLK I/O tCLQX tCLQV tCLQX tCLQV tCL tSHQZ LSB OUT tQLQH tQHQL Figure 68 Serial Output Timing FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 68 Figure 69 Serial Input Timing Figure 70 Hold Timing FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 69 13. Ordering Information FM 25Q 16 -XXX -C -H Company Prefix FM = Fudan Microelectronics Group Co.,ltd Product Family 25Q = 2.7~3.6V Serial Flash with 4KB Uniform-Sector, Dual/Quad SPI & QPI Product Density 16= 16M-bit Package Type (1) SO = 8-pin SOP（150mil） SOB = 8-pin SOP（208mil） DN = 8-pin TDFN (2mm x 3mm)(2) DNA = 8-pin TDFN (5mm x 6mm) Product Carrier U = Tube T = Tape and Reel HSF ID Code G = RoHS Compliant, Halogen-free, Antimony-free Note: 1. For SO package, MSL1 package are available, for detail please contact local sales office. 2. For Thinner package please contact local sales office. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 70 14. Part Marking Scheme 14.1. SOP8 (150mil) 14.2. SOP8 (208mil) 14.3. TDFN8 (2x3mm) FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 71 14.4. TDFN8 (5x6mm) FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 72 15. Packaging Information SOP 8 (150mil) Symbol MIN A 1.350 A1 0.050 b 0.330 c 0.150 D 4.700 E1 3.700 E 5.800 e 1.270(BSC) L 0.400 θ 0° NOTE: 1. Dimensions are in Millimeters. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 MAX 1.750 0.250 0.510 0.260 5.150 4.100 6.200 1.270 8° Datasheet 73 SOP 8 (208mil) Symbol MIN A –– A1 0.050 b 0.350 c 0.100 D 5.130 E1 5.180 E 7.700 e L 0.500 θ 0° NOTE: 1. Dimensions are in Millimeters. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 MAX 2.100 0.250 0.500 0.250 5.330 5.380 8.100 1.270(BSC) 0.850 8° Datasheet 74 TDFN8(2x3mm) Symbol MIN A 0.700 A1 0.000 D 1.900 E 2.900 D2 1.400 E2 1.400 k 0.150(MIN) b 0.200 e 0.500(TYP) L 0.200 NOTE: 1. Dimensions are in Millimeters. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 MAX 0.800 0.050 2.100 3.100 1.600 1.700 0.300 0.600 Datasheet 75 TDFN 8 (5x6mm) Symbol A A1 D D1 E E1 b e L MIN 0.700 0.000 4.900 3.900 5.900 3.300 0.350 MAX 0.800 0.050 5.100 4.300 6.100 3.500 0.450 1.270TYP 0.500 0.700 NOTE: 1 Dimensions are in Millimeters. FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 76 16. Revision History Publication Pages Revise Description date preliminary Nov. 2013 76 Initial Document Release. 0.1 Sep.2014 78 Added VSOP8 (150mil) offering and parts 1 Updated the chapters of packaging type, Ordering information, Part marking scheme and packaging 1.0 Dec.2014 76 information. 2 Added Erase suspend operation limitation. 3 Corrected the typo. 1 Added TDFN8 2*3 offering and parts 2 Updated Packaging Information 1.1 Sep. 2015 77 3 Updated Features 4 Corrected the typo. Version FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 77 Sales and Service Shanghai Fudan Microelectronics Group Co., Ltd. Address: Bldg No. 4, 127 Guotai Rd, Shanghai City China. Postcode: 200433 Tel: (86-021) 6565 5050 Fax: (86-021) 6565 9115 Shanghai Fudan Microelectronics (HK) Co., Ltd. Address: Unit 506, 5/F., East Ocean Centre, 98 Granville Road, Tsimshatsui East, Kowloon, Hong Kong Tel: (852) 2116 3288 2116 3338 Fax: (852) 2116 0882 Beijing Office Address: Room 423, Bldg B, Gehua Building, 1 QingLong Hutong, Dongzhimen Alley north Street, Dongcheng District, Beijing City, China. Postcode: 100007 Tel: (86-010) 8418 6608 Fax: (86-010) 8418 6211 Shenzhen Office Address: Room.1301, Century Bldg, No. 4002, Shengtingyuan Hotel, Huaqiang Rd (North), Shenzhen City, China. Postcode: 518028 Tel: (86-0755) 8335 0911 8335 1011 8335 2011 8335 0611 Fax: (86-0755) 8335 9011 Shanghai Fudan Microelectronics (HK) Ltd Taiwan Representative Office Address: Unit 1225, 12F., No 252, Sec.1 Neihu Rd., Neihu Dist., Taipei City 114, Taiwan Tel : (886-2) 7721 1890 (886-2) 7721 1889 Fax: (886-2) 7722 3888 Shanghai Fudan Microelectronics (HK) Ltd Singapore Representative Office Address : 237, Alexandra Road, #07-01 The Alexcier, Singapore 159929 Tel : (65) 6472 3688 Fax: (65) 6472 3669 Shanghai Fudan Microelectronics Group Co., Ltd NA Office Address: 2490 W. Ray Road Suite#2 Chandler, AZ 85224 USA Tel : (480) 857-6500 ext 18 Web Site: http://www.fmsh.com/ FM25Q16 16M-BIT SERIAL FLASH MEMORY Ver 1.1 Datasheet 78