PWE080N65SFTK

PWE080N65SFTK Perfect MOS6 N-MOSFET 650V, 74mΩ, 41A 重庆平伟实业股份有限公司 Features • Uses PingWei advanced PerfectMOS6 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Excellent Low Ciss 100% DVDS Tested 100% AvalancheTested • Qualified according to JEDEC criteria Applications • PFC stages, hard switching PWM stages and resonant switching • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS Product Summary VDS 650V RDS(on)@10V typ 74mΩ ID 41A TOLL-2L Package Marking and Ordering Information Part # Marking Package Packing Reel Size Tape Width Qty PWE080N65SFTK PWE080N65SFTK TOLL-2L Tape&Reel 13 inches 24mm 1500pcs Symbol Value Unit VDS 650 V ID 120 Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current 41 TC = 25°C (Silicon limit) TC = 25°C (Package limit) A 26 TC = 100°C (Silicon limit) Ta = 25°C 3 Pulsed drain current (TC = 25°C, tp =100uS) ID pulse 166 A Avalanche energy, single pulse (Vds=100V) EAS 750 mJ Gate-Source voltage VGS ±20 V Ptot 313 W Power dissipation TC = 25°C Ta = 25°C 1.3 Operating junction and storage temperature Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) Rev Formal ©ChongQing PingWei Enterprise CO., LTD Tj , T stg -55...+150 °C Tsold 260 °C Page 1 PWE080N65SFTK Perfect MOS6 N-MOSFET 650V, 74mΩ, 41A 重庆平伟实业股份有限公司 Thermal Resistance Parameter Symbol Thermal resistance, junction – case. Thermal resistance, junction - ambient(min. footprint) Value Unit Test Condition 0.40 °C/W - 94 °C/W - min. typ. max. RthJC - 0.25 RthJA - - Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 650 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 3.0 - 5.0 V VDS=VGS,ID=250uA VDS=650V,VGS=0V Zero gate voltage drain current IDSS Gate-source leakage current - 0.7 10 - - 100 IGSS - ±10 ±100 nA VGS=±20V,VDS=0V RDS(on) - 74 80 mΩ Vgs=10V,Id=20A gfs - 29 - S VDS=5V,ID=20A Input Capacitance Ciss - 3539 - Output Capacitance Coss - 88 - pF Reverse Transfer Capacitance Crss - 5 - VGS=0V, VDS=400V, f=1MHz Gate Total Charge QG - 91 - Gate-Source charge Qgs - 28 - nC Vds=325V,Id=23.5A ,Vgs=10V Gate-Drain charge Qgd - 42 - Turn-on delay time td(on) - 40 - tr - 87 - td(off) - 109 - Fall time tf - 36 - Gate resistance RG - 11 - Drain-source on-state resistance Transconductance μA Tj=25°C Tj=150°C Dynamic Characteristic Rise time Turn-off delay time Rev Formal ©ChongQing PingWei Enterprise CO., LTD ns Ω VGS=10V, VDD=235V, RG_ext=2.5Ω,ID=47A VGS=0V, VDS=0V, f=1MHz Page 2 PWE080N65SFTK Perfect MOS6 N-MOSFET 650V, 74mΩ, 41A 重庆平伟实业股份有限公司 Body Diode Characteristic Parameter Value Unit Test Condition 1.5 V VGS=0V,ISD=20A - 41 A TC = 25°C - - 166 A TC = 25°C trr - 150 - ns Qrr - 1055 - nC Symbol min. typ. max. VSD - 0.88 IS - IS pulse Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Body Diode Forward Voltage Body Diode Continuous Forward Current Body Diode Pulsed Current Rev Formal ©ChongQing PingWei Enterprise CO., LTD VR=37V,IF=10A, dI/dt=100A/μs Page 3 PWE080N65SFTK Perfect MOS6 N-MOSFET 650V, 74mΩ, 41A 重庆平伟实业股份有限公司 Typical Performance Characteristics VGS=20V VGS=6V VGS=5.5V VGS=5V 150°C 25°C Rev Formal ©ChongQing PingWei Enterprise CO., LTD Page 4 PWE080N65SFTK Perfect MOS6 N-MOSFET 650V, 74mΩ, 41A Rev Formal ©ChongQing PingWei Enterprise CO., LTD 重庆平伟实业股份有限公司 Page 5 PWE080N65SFTK Perfect MOS6 N-MOSFET 650V, 74mΩ, 41A 重庆平伟实业股份有限公司 D=0.5 0.3 0.1 0.05 0.02 0.01 Single pulse Rev Formal ©ChongQing PingWei Enterprise CO., LTD Page 6 PWE080N65SFTK Perfect MOS6 N-MOSFET 650V, 74mΩ, 41A 重庆平伟实业股份有限公司 Test Circuit & Waveform Rev Formal ©ChongQing PingWei Enterprise CO., LTD Page 7 PWE080N65SFTK Perfect MOS6 N-MOSFET 650V, 74mΩ, 41A 重庆平伟实业股份有限公司 Package Outline: TOLL-2L SYMBOL Rev Formal MILLIMETERS INCHES MIN MAX MIN MAX A 2.20 2.40 0.087 0.094 A1 0.05 0.20 0.002 0.008 b 0.65 0.85 0.026 0.033 b1 0.30 0.50 0.012 0.020 C 0.35 0.65 0.014 0.026 D 10.35 10.70 0.407 0.421 D1 3.15 3.45 0.124 0.136 E 9.80 10.00 0.386 0.394 E1 9.65 9.95 0.380 0.392 E2 7.90 8.30 0.311 0.327 E3 6.80 7.20 0.268 0.283 E4 0.30 0.75 0.012 0.030 e 1.15 1.25 0.045 0.049 L 1.35 1.85 0.053 0.073 L1 0.95 1.35 0.037 0.053 L2 0.40 0.80 0.016 0.031 L3 0.60 0.85 0.024 0.033 θ 7° 12° 7° 12° P 2.90 3.10 0.114 0.122 Q 4.50 4.70 0.177 0.185 Q1 5.10 5.30 0.201 0.209 H 11.55 11.95 0.455 0.470 ©ChongQing PingWei Enterprise CO., LTD Page 8 PWE080N65SFTK Perfect MOS6 N-MOSFET 650V, 74mΩ, 41A 重庆平伟实业股份有限公司 Revision History Revison Date 1.0 2023/2/9 Major changes Release of Formal Version. Disclaimer Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Buyer is responsible for its products and applications using PingWei products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by PingWei. “Typical” parameters which may be provided in PingWei data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE Rev Formal ©ChongQing PingWei Enterprise CO., LTD Page 9