B5817WS

B5817 WS-B5819WS HD SD0.75 SOD323 Plastic-Encapsulate Diodes Schottky Rectifier Features ● VR 20V-40V ● IO 1A SOD3 23 Applications ● Low Voltage    Rectification ● Low Power Consumption Applications ● High Efficiency DC/DC Conversion M   arking ● B5817WS:SJ B5818WS:SK B5819WS:SL Parameter Symbol B5818WS B5817WS B5819WS Unit Non-Repetitive Peak Reverse Voltage VRM 20 30 40 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V RMS Reverse Voltage Average Rectified Output Current IO 1 A IFSM 9 A Repetitive Peak Forward Current IFRM 1.5 A Power Dissipation Pd 500 mW RθJA 400 ℃/W TJ 125 ℃ TSTG -55~+150 ℃ Non-repetitive Peak Forward Surge Current @t=8.3ms Thermal Resistance Junction to Ambient Junction temperature Storage Temperature Electrical Characteristics (Ta=25℃ Unless otherwise specified） Symbol Parameter Test conditions IR= 1mA Reverse breakdown voltage V(BR) Reverse voltage leakage current IR VR=20V VR=30V VR=40V B5817WS Forward voltage VF B581 8WS B581 9WS Diode capacitance CD B5817WS B5818WS B5819WS B5817WS B5818WS B5819WS Min Max 20 30 40 V 1 I F=1A 0.45 IF=3A 0.75 IF=1A 0.55 IF=3A 0.875 I F=1A 0.6 IF=3A 0.9 VR=4V, f=1MHz High Diode Semiconductor Unit 120 mA V V V pF 1 Typical Characteristics Forward 10 Characteristics Reverse 10 Pulsed (mA) a T a = 25 ℃ T REVERSE CURRENT IR =1 00 ℃ (A) IF FORWARD CURRENT 1 0.1 0.0 Characteristics Pulsed Ta=100℃ 1 0.1 Ta=75℃ 0.01 Ta=25℃ 1E-3 0.4 0.8 1.2 FORWARD VOLTAGE 1.6 VF 2.0 1 (V) 10 20 30 REVERSE VOLTAGE 40 (V) VR Power Derating Curve Capacitance Characteristics 600 200 (mW) f=1MHz PD 160 120 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 80 40 0 500 400 300 200 100 0 0 4 8 12 REVERSE VOLTAGE 16 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE High Diode Semiconductor 100 Ta 125 (℃) 2 SOD323 Package Outline Dimensions 0.80 SOD323 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOD323 1.46 2.9 1.25 High Diode Semiconductor 4