BZT52C27

B Z T52C2V4 THRU B Z T52C43 SOD1 23 Plastic-Encapsulate Diodes Zener Diodes Features ●Pd ●Vz SOD1 23 500mW 2.4V- 43V Applications ● Stabilizing    Voltage Unit Pd mW Zener current IZ mA PV /VZ Maximum junction temperature Tj ℃ -65 to +150 Tstg ℃ -65 to +150 Power dissipation Storage temperature range Conditions Max Symbol Item TA=25℃ 500 Electrical Characteristics（Ta=25℃ Unless otherwise specified） Item Symbol Thermal resistance RθJA Forward voltage VF Unit Conditions Max ℃/W   Between junction and ambient 340 V IF =10mA 0.9 High Diode Semiconductor 1 Electrical Characteristics (TA=25℃ unless otherwise noted) Dynamic Impedance Zener Voltage Range 1) Type Marking Code V V znom ZT at IZT Z ZT at IZT Z ZK at IZK Reverse Leakage Current IR at VR V V mA Max. (Ω) mA Max. (Ω) mA Max. (μA) V BZT52C2V4 WX 2.4 2.2...2.6 5 100 5 600 1 50 1 BZT52C2V7 W1 2.7 2.5...2.9 5 100 5 600 1 20 1 BZT52C3V0 W2 3.0 2.8...3.2 5 95 5 600 1 10 1 BZT52C3V3 W3 3.3 3.1...3.5 5 95 5 600 1 5 1 BZT52C3V6 W4 3.6 3.4...3.8 5 90 5 600 1 5 1 BZT52C3V9 W5 3.9 3.7...4.1 5 90 5 600 1 3 1 BZT52C4V3 W6 4.3 4...4.6 5 90 5 600 1 3 1 BZT52C4V7 W7 4.7 4.4...5 5 80 5 500 1 3 2 BZT52C5V1 W8 5.1 4.8...5.4 5 60 5 480 1 2 2 BZT52C5V6 W9 5.6 5.2...6 5 40 5 400 1 1 2 BZT52C6V2 WA 6.2 5.8...6.6 5 10 5 150 1 3 4 BZT52C6V8 WB 6.8 6.4...7.2 5 15 5 80 1 2 4 BZT52C7V5 WC 7.5 7...7.9 5 15 5 80 1 1 5 BZT52C8V2 WD 8.2 7.7...8.7 5 15 5 80 1 0.7 5 BZT52C9V1 WE 9.1 8.5...9.6 5 15 5 100 1 0.5 6 BZT52C10 WF 10 9.4...10.6 5 20 5 150 1 0.2 7 BZT52C11 WG 11 10.4...11.6 5 20 5 150 1 0.1 8 BZT52C12 WH 12 11.4...12.7 5 25 5 150 1 0.1 8 BZT52C13 WI 13 12.4...14.1 5 30 5 170 1 0.1 8 BZT52C15 WJ 15 13.8...15.6 5 30 5 200 1 0.1 10.5 BZT52C16 WK 16 15.3...17.1 5 40 5 200 1 0.1 11.2 BZT52C18 WL 18 16.8...19.1 5 45 5 225 1 0.1 12.6 BZT52C20 WM 20 18.8...21.2 5 55 5 225 1 0.1 14 BZT52C22 WN 22 20.8...23.3 5 55 5 250 1 0.1 15.4 BZT52C24 WO 24 22.8...25.6 5 70 5 250 1 0.1 16.8 BZT52C27 WP 27 25.1...28.9 2 80 2 300 0.5 0.1 18.9 BZT52C30 WQ 30 28...32 2 80 2 300 0.5 0.1 21 BZT52C33 WR 33 31...35 2 80 2 325 0.5 0.1 23.1 BZT52C36 WS 36 34...38 2 90 2 350 0.5 0.1 25.2 BZT52C39 WT 39 37...41 2 130 2 350 0.5 0.1 27.3 BZT52C43 WU 43 40...46 2.5 130 2 500 1 2 33 1) VZT is tested with pulses (20 ms). High Diode Semiconductor 2 Typical Characteristics 100 Ta =25℃ PD =350mW Pulsed 1 43 39 36 33 27 30 22 24 15 20 10 18 10 15 10 9.1 8.2 7.5 6.2 6.8 5.6 4.7 2.4 5.1 10 PD =350mW 11 12 13 IZ, ZENER CURRENT (mA) Pulsed 16 Ta =25℃ IZ, ZENER CURRENT (mA) Zener Characteristics(11 V to 43 V) Zener Characteristics(VZ Up to 10 V) 100 1 0.5 1 2 3 4 5 6 7 8 9 10 11 20 VZ, ZENER VOLTAGE (V) Temperature Coefficients 30 35 40 50 Pulsed TYPICAL Ta VALUES 35 45 Typical Leakage Current 100 FOR BZT52CXXX SERIES 10 30 IR, LEAKAGE CURRENT (uA) θVZ, TEMPERATURE COEFFICIENT (mV/℃) 40 25 VZ, ZENER VOLTAGE (V) 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100℃ 1E-3 0 Ta=25℃ -5 1E-4 0 4 8 12 16 20 24 28 32 36 40 44 0 5 VZ, NOMINAL ZENER VOLTAGE (V) 10 15 20 25 35 40 45 Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 1000 Ta=25℃ Ta=25℃ f=1MHz ZZT, DYNAMIC IMPEDANCE(Ω) 100 1V BIAS BIAS AT 50% OF VZ NOM 10 IZ(AC)=0.1IZ(DC) IZ=1mA 0V BIAS C, CAPACITANCE (pF) 30 VZ, NOMINAL ZENER VOLTAGE (V) 1 f=1kHz 100 IZ=5mA 10 1 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve 800 POWER DISSIPATION PD (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) High Diode Semiconductor 3 SOD-1 23 Package Outline Dimensions SOD-1 23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 4 Reel Taping Specifications For Surface Mount Devices-SOD123 High Diode Semiconductor 5