HD2310

HD2310 SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET Product Summary V(BR)DSS RDS(on)MAX ID SOT- 23   105mΩ@10V  60 V 125mΩ@4.5V   D 3A Features ● High power and current handing capability ● Lead free product is acquired ● Surface mount package S G Applications    ● DC/DC Converters ● Battery Switch  Marking:   ● S10 Symbol Value Unit Drain-Source Voltage Parameter VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 3 A Pulsed Drain Current (note 1) IDM 10 A Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 2) High Diode Semiconductor 1 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Type Max Unit STATIC CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA Zero Gate Voltage Drain Current IDSS VDS =60V,VGS = 0V Gate-Body Leakage Current IGSS VGS =±20V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate Threshold Voltage 3 Drain-Source On-Resistance Forward Tranconductance 3 RDS(on) 3 gFS 60 V 1 µA ±100 nA 1.2 2 V VGS =10V, ID =3A 70 105 VGS =4.5V, ID =3A 82 125 VDS =15V, ID =2A 0.5 1.4 2.5 mΩ S 4 DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 250 VDS =30V,VGS =0V,f =1MHz 26 Crss 20 Total Gate Charge Qg 7 Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.5 Turn-On Delay Time td(on) 6.5 Turn-On Rise Time tr Turn-Off Delay Time td(off) SWITCHING CHARACTERISTICS pF 4 Turn-Off Fall Time VDS =30V,VGS =4.5V,ID =3A VGS=10V,VDD=30V,ID=1.5A,RGEN=1Ω tf Source-Drain Diode characteristics 1.2 nC 15.2 ns 15.2 10.3 4 Body Diode Voltage VSD IS=3A,VGS=0V 0.8 1.2 V Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting. High Diode Semiconductor 2 Typical Characteristics Output Characteristics Transfer Characteristics 15 Ta=25℃ 2.0 VGS=10V Pulsed Pulsed 12 1.6 VGS=3V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) VDS=3V VGS=4.5V 9 6 VGS=2.5V 3 Ta=25℃ Ta=125℃ 1.2 0.8 0.4 0 0 1 2 3 4 0.0 0.0 5 DRAIN TO SOURCE VOLTAGE VGS (V) 1.0 1.5 2.0 2.5 3.0 GATE TO SOURCE VOLTAGE VGS (V) RDS(ON)  ID 140 0.5 RDS(ON) - VGS 250 Pulsed Ta=25℃ Pulsed 200 100 ON-RESISTANCE RDS(ON) (m) ON-RESISTANCE RDS(ON) (m) 120 VGS=4.5V 80 VGS=10V 60 ID=3A 150 100 Ta=25℃ 50 40 20 0 2 4 6 8 0 10 0 DRAIN CURRENT ID (A) 2 4 6 8 GATE TO SOURCE VOLTAGE VGS (V) 10 Threshold Voltage IS - VSD 1.4 10 Pulsed THRESHOLD VOLTAGE VTH (V) SOURCE CURRENT IS (A) 1.2 1 Ta=125℃ Ta=25℃ 0.1 ID=250uA 1.0 0.8 0.6 0.01 0.0 0.4 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE VSD (V) 1.2 25 50 75 100 125 JUNCTION TEMPERATURE Tj (℃) High Diode Semiconductor 3 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 4 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 5