SS14

SS12 THRU SS120 Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0 A 1 2 SMAF FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ∠ALL ROUND C A ∠ALL ROUND D g g pad e E MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg / 0 . 00095oz E A V M A pad HE Top View mm mil Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 UNIT min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 ∠ 7° Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols SS12 SS14 Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 Maximum RMS voltage V RMS 14 28 42 Maximum DC Blocking Voltage V DC 20 40 60 Maximum Average Forward Rectified Current I F(AV) 1.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 30 A Parameter Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range VF SS16 0.55 SS112 SS115 SS120 100 120 150 200 V 56 70 84 105 140 V 80 100 120 150 200 V SS110 SS18 0.70 0.3 10 IR 110 Cj Units 0.85 0.90 V 0.2 5 0.1 2 mA 80 pF °C/W RθJA 95 Tj -55 ~ +125 °C T stg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com SS12 THRU SS120 Surface Mount Schottky Barrier Rectifier Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 10 4 10 3 T J =100°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 Case Temperature (°C) 40 60 80 100 Fig.4 Typical Junction Capacitance 500 Junction Capacitance ( pF) 20 10 1.0 SS12F/SS14F SS16F/SS18F SS110F/SS112F SS115F/SS120F 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T J =25°C 200 100 50 SS12F/SS14F 20 SS16F-SS120F 10 1.8 1 0.1 100 10 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) 20 Percent of Rated Peak Reverse Voltage（%） 50 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles at 60Hz 1000 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） The recommended mounting pad size 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) mm Unit ： (mil) ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com