AO4840-ES
Rev-1.3
www.elecsuper.com
SuperMOS – SOP8 40V 20mΩ RDS(ON), N-channel MOSFET
1. Description
The AO4840-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product AO4840-ES is Pb-free.
2. Features
40V RDS(ON)=20mΩ(Typ.) @VGS=10V
RDS(ON)=28mΩ(Typ.) @VGS=4.5V
Material: Halogen free
Reliable and rugged
Fast Switching
Avalanche Rated
High density cell design for low RDS(on)
Low leakage current
3. Applications
PWM applications
100% UIS TESTED
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering Information
Part
Number
Package
Marking
Material
Packing
Quantity per
reel
Flammability
Rating
AO4840-ES
SOP8
ES4840/LOT
Halogen
free
Tape &
Reel
3,000 PCS
UL 94V-0
Reel
Size
13
inches
5. Pin Configuration and Functions
Pin
Function
2
Gate2
1
Source2
7/8
Drain2
4
Gate1
3
Source1
5/6
Drain1
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Outline
8
7
Circuit Diagram
6
5
LOT
ES4840
1
2
3
4
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Rev-1.3
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6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25 ℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Limited
Unit
Drain-Source Voltage
BVDSS
40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
Maximum Power Dissipation
TA=25°C
TA=75°C
TA=25°C
TA=75°C
6.8
ID
A
5.2
2
PD
W
1.2
Pulsed Drain Current
IDM
27.2
A
Avalanche Current, Single Pulsed a
IAS
11
A
Avalanche Energy, Single Pulsed a
EAS
18
mJ
Operating Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Thermal resistance ratings
Parameter
Symbol
Typical
Maximum
Junction-to-Ambient Thermal Resistance (t ≤ 10s)
RθJA
48
62.5
Junction-to-Lead Thermal Resistance
RθJL
35
50
Unit
°C/W
Note:
a: Tj=25℃,VDD=40V, VG=10V, L=0.3mH, Rg=25Ω
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N-channel Electrical Characteristics
At TA = 25℃ unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
40
V
Zero Gate Voltage Drain Current
IDSS
VDS=40V, VGS=0V
1.0
uA
Gate-to-source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
1.5
2.2
V
VGS=10V, ID=6A
20
25
VGS=4.5V, ID=5A
28
38
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Drain-to-source On-resistance
RDS(on)
Forward Trans conductance
gFS
VGS=VDS, ID=250uA
1.0
VDS=5.0V, ID=6A
40
mΩ
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
410
VGS=0V, f=1MHz,
VDS=20V
100
pF
35
8.5
VGS=10V, VDS=20V,
ID=6A
1.2
nC
2.4
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
4.4
3.3
VGS=10V, VDS=20V,
RL=3.3Ω, RGEN=3Ω
ns
15.8
tf
3.2
BODY DIODE CHARACTERISTICS
Forward Voltage
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VSD
VGS=0V, IS=1.0A
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0.45
1.5
V
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Rev-1.3
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7. N-channel Typical Characteristic
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AO4840-ES
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Rev-1.3
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8. Dimension (SOP8)
BL
BW
FT
TL
LW
θ
FL
A1
LP
A
A2
A3
Z
LL
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
Symbol
Dimensions
Min.
A
Max.
Symbol
1.75
Min.
Max.
FL
0.50
0.80
1.25
1.30
A1
0.05
0.15
LP
A2
1.40
1.50
LL
A3
0.623 BSC
0.38
0.43
5.90
6.10
4.80
5.00
TL
BW
3.70
4.10
Z
FT
0.20
0.21
θ
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1.1 BSC
LW
BL
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Dimensions
0.54
0°
8°
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Rev-1.3
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DISCLAIMER
ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES
(INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, SAFETY INFORMATION, AND
OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED,
INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
these resources are prohibited. No license is granted to any other ElecSuper intellectual property right or to any third party
intellectual property right. ElecSuper disclaims responsibility for, and you will fully indemnify ElecSuper and its representatives
against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. ElecSuper’s products are
provided subject to ElecSuper’s Terms of Sale or other applicable terms available either on www.elecsuper.com or provided in
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