NSI8210N0-DSPR

NSi8210 High Reliability Single-Channel Digital Isolators Datasheet (EN) 1.2 Product Overview Safety Regulatory Approvals NSi8210 is a high reliability single channel digital isolator. The NSi8210 device is safety certified by UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of NSi8210 is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 200kV/us. NSi8210 provides default output level configuration when the input power is lost. Wide supply voltage of NSi8210 supports to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. AEC-Q100 (Grade 1) option is provided for all devices.  UL recognition: up to 5000Vrms for 1 minute per UL1577 Key Features  Up to 5000Vrms Insulation voltage  Date rate: DC to 150Mbps  Power supply voltage: 2.5V to 5.5V  All devices are AEC-Q100 qualified  CQC certification per GB4943.1-2011  CSA component notice 5A approval IEC60950-1 standard  DIN VDE V 0884-11:2017-01 Applications  Industrial automation system  Isolated SPI, RS232, RS485  General-purpose multichannel isolation  Motor Control Device Information Part Number NSi8210Nx-XSPR Package SOP8 Body Size 4.90mm × 3.90mm NSi8210Wx-XSWVR SOW8 5.85mm × 7.50mm NSi8210Wx-XSWR SOW16 10.30mm × 7.50mm Functional Block Diagrams  High CMTI: 200kV/us  Chip level ESD: HBM: ±8kV  Interlock function  High system level EMC performance: Enhanced system level ESD, EFT, Surge immunity Figure 1. NSi8210Nx-XSPR Block Diagram  Default output high level or low level option  Isolation surge voltage: >10kV  Low power consumption: 1.5mA/ch (1 Mbps)  Low propagation delay: 400 >600 >600 Ⅱ Ⅰ Ⅰ For Rated Mains Voltage ≤ 150Vrms Ⅰto Ⅳ Ⅰto Ⅳ Ⅰto Ⅳ For Rated Mains Voltage ≤ 300Vrms Ⅰto Ⅲ Ⅰto Ⅳ Ⅰto Ⅳ For Rated Mains Voltage ≤ 400Vrms Ⅰto Ⅲ Ⅰto Ⅳ Ⅰto Ⅳ 10/105/21 10/105/21 10/105/21 2 2 2 VIORM 565 2121 2121 Vpeak V pd (m) 847 / / Vpeak / 3977 3977 678 / / / 3394 3394 678 2545 2545 Material Group DIN EN 60112 (VDE 0303-11) 28 IEC 60112 V Installation Classification per DIN VDE 0110 Climatic Classification Pollution Degree per DIN VDE 0110, Table 1 Maximum repetitive isolation voltage Input to Output Test Voltage, Method B1 VIORM × 1.5 = Vpd(m), 100% production test, tini = tm = 1 sec, qpd < 5 pC VIORM × 1.875 = Vpd(m), 100% production test, tini = tm = 1 sec, qpd < 5 pC Input to Output Test Voltage, Method A After Environmental Tests Subgroup 1 VIORM × 1.2=Vpd (m), tini = 60 sec, tm=10 sec, qpd < 5 pC V pd (m) VIORM × 1.6=Vpd (m), tini = 60 sec, tm=10 sec, qpd < 5 pC After Input and /or Safety Test Subgroup 2 and Subgroup 3 Copyright © 2022, NOVOSENSE V IORM × 1.2= V pd (m) , t ini = 60 sec, t m = 10 sec, partial discharge < 5 pC V pd (m) Vpeak Vpeak Page 13 NSi8210 Datasheet (EN) 1.2 Description Test Condition Symbol t = 60 sec VIOTM 5300 8000 8000 Vpeak Maximum withstanding isolation voltage VTEST= VISO, t = 60 s (qualification); VTEST= 1.2 × VISO, t = 1 s (100%production) VISO 3750 5000 5000 VRMS Maximum Surge Isolation Voltage Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM×1.3 VIOSM 5384 Maximum transient isolation voltage Value Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM×1.6 Unit Vpeak 6250 6250 Vpeak >109 >109 >109 Ω >1011 >1011 >1011 Ω CIO 0.6 0.6 0.6 pF Input capacitance CI 2 2 2 pF Total Power Dissipation at 25℃ Ps 856 1483 1324 mW Isolation resistance VIO =500V at Tamb=TS RIO VIO =500V at 100℃≤Tamb≤125℃ Isolation capacitance f = 1MHz θJA = 146.1 °C/W, V I = 5.5 V, T J = 150 °C, T A = 25 °C Safety input, output, or supply current θJA = 84.3 °C/W, V I = 5.5 V, T J = 150 °C, T A = 25 °C 156 mA 269.6 Is θJA = 94.4 °C/W, V I = 5.5 V, T J = 150 °C, T A = 25 °C Case Temperature Ts 150 240.8 mA 150 ℃ 150 6.2. Safety-Limiting Values Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSi8210N-DSPR SOP8(150mil) Description Test Condition Value Unit Safety Supply Power RθJA = 146.1 ℃/W, T J = 150 ℃, T A = 25 ℃ 856 mW Safety Supply Current RθJA = 146.1 ℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃ 156 mA 150 °C Safety Temperature2) 1) Calculate with the junction-to-air thermal resistance, RθJA, of SOP8(150mil) package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. 2) The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device. Copyright © 2022, NOVOSENSE Page 14 Datasheet (EN) 1.2 900 800 700 600 500 400 300 200 100 0 0 50 100 150 Saftey limiting current(mA) Safety Limiting Power (mW) NSi8210 200 180 160 140 120 100 80 60 40 20 0 0 Ambient Temperature (°C) 50 100 150 200 250 Ambient Temperature(°C) Figure 6.1 NSi8210N-DSPR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSi8210W-DSWVR SOW8(300mil) Description Test Condition Value Unit Safety Supply Power RθJA = 84.3℃/W, T J = 150 ℃, T A = 25 ℃ 1483 mW Safety Supply Current RθJA = 84.3℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃ 270 mA 150 °C Safety Temperature2) Calculate with the junction-to-air thermal resistance, RθJA, of SOW8(300mil) package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. 4) The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device. 300 1000 900 800 700 600 500 400 300 200 100 0 Saftey limiting current(mA) Safety Limiting Power (mW) 3) 250 200 150 100 0 50 100 150 Ambient Temperature (°C) 200 50 0 0 50 100 150 200 250 Ambient Temperature(°C) Figure 6.2 NSi8210W-DSWVR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 Copyright © 2022, NOVOSENSE Page 15 NSi8210 Datasheet (EN) 1.2 Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSi8210W-DSWR SOW16(300mil) Description Test Condition Value Unit Safety Supply Power RθJA = 94.4℃/W, T J = 150 ℃, T A = 25 ℃ 1324 mW Safety Supply Current RθJA = 94.4℃/W, V I = 5.5 V, T J = 150 ℃, T A = 25 ℃ 241 mA 150 °C Safety Temperature2) 6) The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device. 1000 900 800 700 600 500 400 300 200 100 0 0 50 100 150 200 Saftey limiting current(mA) Calculate with the junction-to-air thermal resistance, RθJA, of SOW16(300mil) package (Thermal Information Table) which is that of a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3. Safety Limiting Power (mW) 5) 300 250 200 150 100 50 0 Ambient Temperature (°C) 0 50 100 150 200 Ambient Temperature(°C) 250 Figure 6.3 NSi8210W-DSWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 6.3. Regulatory Information The NSi8210N are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program1 VDE Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411:2017-012 CQC Certified by CQC11471543-2012 GB4943.1-2011 Single Protection, 3750Vrms Isolation voltage Single Protection, 3750Vrms Isolation voltage Basic Insulation 565Vpeak, VIOSM=5384Vpeak File (E500602) File (E500602) File (pending) Copyright © 2022, NOVOSENSE Basic insulation at 400Vrms (565Vpeak) File (CQC20001264940) Page 16 NSi8210 Datasheet (EN) 1.2 The NSi8210W-DSWVR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program1 Single Protection, 5000Vrms Isolation voltage File (pending) VDE CQC Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-012 Certified by CQC11471543-2012 Single Protection, 5000Vrms Isolation voltage Reinforced Insulation 2121Vpeak, VIOSM=6250Vpeak Reinforced insulation at 1500Vrms (2121Vpeak) File (pending) File (5024579-48800002 / 276211) File (CQC20001264938 ) VDE CQC GB4943.1-2011 The NSi8210W-DSWR are approved by the organizations listed in table. CUL UL 1577 Component Recognition Program1 Single Protection, 5000Vrms Isolation voltage File (pending) Copyright © 2022, NOVOSENSE Approved under CSA Component Acceptance Notice 5A DIN VDE V 088411(VDE V 088411):2017-012 Certified by CQC11471543-2012 Single Protection, 5000Vrms Isolation voltage Reinforced Insulation 2121Vpeak, VIOSM=6250Vpeak Reinforced insulation at 1500Vrms (2121Vpeak) File (pending) File (5024579-48800002 / 276211) File (CQC20001264939) GB4943.1-2011 Page 17 NSi8210 Datasheet (EN) 1.2 7. Function Description 7.1. Overview The NSi8210 is a single-channel digital isolator based on a capacitive isolation barrier technique. The digital signal is modulated with RF carrier generated by the internal oscillator at the Transmitter side. Then it is transferred through the capacitive isolation barrier and demodulated at the Receiver side. NSi8210 is a high reliability single channel digital isolator with AEC-Q100(Grade 1) qualified, it’s certified by UL1577 and support 3.75kVrms insulation withstand voltage, while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of NSi8210 is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 200kV/us. NSi8210 provides default output level configuration when the input power is lost. Wide supply voltage of NSi8210 supports to connect with most digital interface directly, easy to do the level shift. NSi8210 has a default output status when VDDIN is unready and VDDOUT is ready as shown in Table 7.1, which helps for diagnosis when power is missing at the transmitter side. The other outputs follow the same status with the input A within 1us after powering up respectively. Table 7.1 Output status vs. power status with interlock function Input VDD1 status VDD2 status Output Comment H1 Ready Ready H Normal operation. L2 Ready Ready L X3 Unready Ready L(NSi8210x0) H(NSi8210x1) X Ready Unready X The output follows the same status with the input within 20us after input side VDD1 is powered on. The output follows the same status with the input within 20us after output side VDD2 is powered on. Note: 1H=Logic high; 2L=Logic low; 3X=Logic low or logic high Copyright © 2022, NOVOSENSE Page 18 NSi8210 Datasheet (EN) 1.2 7.2. OOK Modulation NSi8210 is based on a capacitive isolation barrier technique and the digital signal is modulated with RF carrier generated by the internal oscillator at the transmitter side, as shown in Figure 7.1 & Figure 7.2, then it is transferred through the capacitive isolation barrier and demodulated at the receiver side. The modulation uses OOK modulation technique with key benefits of high noise immunity and low radiation EMI. Figure 7.1 Single Channel Function Block Diagram Figure 7.2 OOK Modulation Copyright © 2022, NOVOSENSE Page 19 NSi8210 Datasheet (EN) 1.2 8. Application Note 8.1. Typical Application Circuit Figure 8.1 Typical PWM isolation circuit 8.2. PCB Layout NSi8210 requires a 0.1 µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as possible to the package. Figure 8.2 to Figure 8.3 show the recommended PCB layout, make sure the space under the chip should keep free from planes, traces, pads and via. To enhance the robustness of a design, the user may also include resistors (50–300 Ω) in series with the inputs and outputs if the system is excessively noisy. The series resistors also improve the system reliability such as latch-up immunity. The typical output impedance of an isolator driver channel is approximately 50Ω, ±40%. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. Figure8.2 Recommended PCB Layout — Top Layer Copyright © 2022, NOVOSENSE Figure8.3 Recommended PCB Layout — Bottom Layer Page 20 NSi8210 Datasheet (EN) 1.2 8.3. High Speed Performance Figure 8.4 NSi8210N Eye diagram of output signal at 200Mbps 8.4. Typical Supply Current Equations The typical supply current of NSi8210 can be calculated using below equations. IDD1 and IDD2 are typical supply currents measured in mA, f is data rate measured in Mbps, CL is the capacitive load measured in pF NSi8210: IDD1 = 0.6 *a1+1.25*b1+1.1*c1. IDD2 = 0.9 *a1+1.85*b1+VDD1*f* CL *c1*10-9 Where a1 is the channel number of low inputs at side 1, b1 is the channel number of high inputs at side 1, c1 is the channel number of switch signal inputs at side 1. Copyright © 2022, NOVOSENSE Page 21 NSi8210 Datasheet (EN) 1.2 9. Package Information Figure 9.1 SOP8 Package Shape and Dimension in millimeters and (inches) Copyright © 2022, NOVOSENSE Page 22 NSi8210 Datasheet (EN) 1.2 Figure 9.2 SOP8 Package Board Layout Example Figure 9.3 SOW8 Package Shape and Dimension in millimeters and (inches) Copyright © 2022, NOVOSENSE Page 23 NSi8210 Datasheet (EN) 1.2 Figure 9.4 SOW8 Package Board Layout Example Figure 9.5 SOW16 Package Shape and Dimension in millimeters and (inches) Copyright © 2022, NOVOSENSE Page 24 NSi8210 Datasheet (EN) 1.2 Figure 9.6 SOP16(300mil) Package Board Layout Example 10. Ordering Information Part Number NSi8210N0DSPR NSi8210N1DSPR NSi8210N0Q1SPR NSi8210N1Q1SPR NSi8210W0 -DSWVR NSi8210W1 -DSWVR NSi8210W0 -Q1SWVR NSi8210W1 -Q1SWVR NSi8210W0 -DSWR Isolation Rating (kV) Numbe r of side 1 inputs Numbe r of side 2 inputs Max Data Rate (Mbps) Default Output State Temperature MSL 3.75 1 0 150 Low -40 to 125℃ 1 3.75 1 0 150 High -40 to 125℃ 1 3.75 1 0 150 Low -40 to 125℃ 1 3.75 1 0 150 High -40 to 125℃ 1 5 1 0 150 Low -40 to 125℃ 3 5 1 0 150 High -40 to 125℃ 3 5 1 0 150 Low -40 to 125℃ 3 5 1 0 150 High -40 to 125℃ 3 5 1 0 150 Low -40 to 125℃ 2 Copyright © 2022, NOVOSENSE Package Type SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (150mil) SOP8 (300mil) SOP8 (300mil) SOP8 (300mil) SOP8 (300mil) SOW16 (300mil) Package Drawing SPQ SOP8 2500 SOP8 2500 SOP8 2500 SOP8 2500 SOW8 1000 SOW8 1000 SOW8 1000 SOW8 1000 SOW16 1000 Page 25 NSi8210 Datasheet (EN) 1.2 NSi8210W1 5 1 0 150 High 2 -40 to 125℃ -DSWR NSi8210W0 5 1 0 150 Low 2 -40 to 125℃ -Q1SWR NSi8210W1 5 1 0 150 High 2 -40 to 125℃ -Q1SWR NOTE: All packages are RoHS-compliant with peak reflow temperatures of 260 °C according classifications and peak solder temperatures. Automotive devices are AEC-Q100 qualified. SOW16 SOW16 1000 (300mil) SOW16 SOW16 1000 (300mil) SOW16 SOW16 1000 (300mil) to the JEDEC industry standard Part Number Rule: 11. Documentation Support Part Number Product Folder Datasheet Technical Documents Isolator selection guide NSiI8210 tbd tbd tbd tbd Copyright © 2022, NOVOSENSE Page 26 NSi8210 Datasheet (EN) 1.2 12. Tape and Reel Information Figure 12.1 Reel Information (for all packages) Copyright © 2022, NOVOSENSE Page 27 NSi8210 Datasheet (EN) 1.2 Figure 12.2 Tape Information of SOP8 Copyright © 2022, NOVOSENSE Page 28 NSi8210 Datasheet (EN) 1.2 Figure 12.3 Tape Information of SOW8 Copyright © 2022, NOVOSENSE Page 29 NSi8210 Datasheet (EN) 1.2 Figure 12.4 Tape Information of SOW16 Copyright © 2022, NOVOSENSE Page 30 NSi8210 Datasheet (EN) 1.2 13. Revision History Revision 1.0 1.1 1.2 Description Initial Version. Update Pin Configuration and Functions Update Insulation and Safety Related Specifications, add Thermal Derating Curve, add Junction Temperature，Change Tstg to -65, Update SOW16 Package information Copyright © 2022, NOVOSENSE Date 2020/12/7 2022/3/1 2022/9/14 Page 31 NSi8210 Datasheet (EN) 1.2 IMPORTANT NOTICE The information given in this document shall in no event be regarded as any warranty or authorization of, express or implied, including but not limited to accuracy, completeness, merchantability, fitness for a particular purpose or infringement of any third party’s intellectual property rights. You are solely responsible for your use of Novosense’ products and applications, and for the safety thereof. You shall comply with all laws, regulations and requirements related to Novosense’s products and applications, although information or support related to any application may still be provided by Novosense. 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