BAV199W

BAV199W Plastic-Encap sulate Diodes SOT-323 SWITCHING DIODE FEATURES z This Switching Diode has The Following Features: Low Leakage Current Applications z 1 3 2 Marking:L21 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 70 V DC Blocking Voltage VR 70 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 215 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 1.0 A Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time www.slkormicro.com Symbol Test V(BR) IR= 100μA IR VF conditions t rr Unit V 70 5 IF=1mA 900 IF=10mA 1000 IF=50mA 1100 IF=150mA 1250 IF = IR=10mA 1 Max VR=70V VR=0, f=1MHz CD Min nA mV 2 pF 3 μs BAV199W Typical Characteristics Forward Reverse Characteristics (nA) (mA) 100 IF Ta=100 ℃ REVERSE CURRENT IR a T= a 2 5℃ =1 00 ℃ 0.6 T FORWARD CURRENT Characteristics 0.8 500 10 1 0.4 Ta=25 ℃ 0.4 0.2 0.8 0.6 1.0 FORWARD VOLTAGE VF 1.2 0 1.4 14 (V) 42 28 REVERSE VOLTAGE Capacitance Characteristics 56 VR 70 (V) Power Derating Curve 250 2.5 Ta=25℃ 200 PD (mW) 2.0 150 1.5 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 1.0 0.5 100 50 0 0.0 0 5 10 REVERSE VOLTAGE www.slkormicro.com 15 VR 20 0 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta (℃) 125 150 BAV199W Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.slkormicro.com Dimensions In Millimeters Max. Min. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP. 1.200 1.400 0.525 REF. 0.260 0.460 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP. 0.047 0.055 0.021 REF. 0.010 0.018 0° 8°