RCQ5409

40V P-Channel MOSFETs RCQ5409 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This BVDSS RDSON ID -40V 13m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -40V,-60A, RDS(ON) =13mΩ@VGS = -10V performance, and withstand high energy pulse in the  avalanche and commutation mode. These devices are  Fast switching well suited for high efficiency fast switching applications.  Green Device Available  Suit for -4.5V Gate Drive Applications PDFN5X6-8 Pin Configuration Applications D DD DD DD  Motor Drive DD  Power Tools  LED Lighting G S G SS S GS S S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Rating Units VDS Symbol Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V Drain Current – Continuous (TC=25℃) -60 -38 -240 A 130 mJ -51 A 97 W ID Parameter Drain Current – Continuous (TC=100℃) Drain Current – Pulsed IDM EAS IAS 1 Single Pulse Avalanche Energy 2 Single Pulse Avalanche Current 2 Power Dissipation (TC=25℃) PD Power Dissipation – Derate above 25℃ A A 0.78 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 1.29 ℃/W 1 www.realchip.net 40V P-Channel MOSFETs RCQ5409 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Off Characteristics Symbol Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V VDS=-40V , VGS=0V , TJ=25℃ --- --- uA VDS=-32V , VGS=0V , TJ=125℃ --- --- -1 -10 VGS=±20V , VDS=0V --- --- ±100 nA VGS=-10V , ID=-15A --- 11.0 13 m VGS=-4.5V , ID=-8A --- 15.0 20.0 m -1.2 -1.6 -2.5 V --- 17 --- S --- 41 65 --- 8.2 15 --- 7.5 12 --- 10 15 VDD=-20V , VGS=-10V , RG=6 --- 20 30 ID=-30A --- 15 25 Fall Time3, 4 --- 25 40 Ciss Input Capacitance --- 2750 4130 Coss Output Capacitance --- 250 375 Crss Reverse Transfer Capacitance --- 175 265 Min. Typ. Max. Unit --- --- A --- ----- -60 -120 -1 BVDSS IDSS IGSS Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Conditions uA On Characteristics RDS(ON) VGS(th) gfs Static Drain-Source On-Resistance Gate Threshold Voltage VGS=VDS , ID =-250uA Forward Transconductance VDS=-10V , ID=-8A Dynamic and switching Characteristics Qg Total Gate Charge3, 4 Qgs Gate-Source Charge3, 4 Qgd Td(on) Tr Td(off) Tf Gate-Drain Turn-On Delay Rise VDS=-20V , VGS=-10V , ID=-30A Charge3, 4 Time3, 4 Time3, 4 Turn-Off Delay Time3, 4 VDS=-20V , VGS=0V , F=1MHz nC ns pF Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter IS Continuous Source Current Conditions VG=VD=0V , Force Current ISM Pulsed Source Current VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- A trr Reverse Recovery Time VR=-30V, IS=-10A --- 45 --- ns Qrr Reverse Recovery Charge di/dt=100A/µs, TJ=25℃ --- 30 --- nC V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-51A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. 2 www.realchip.net 40V P-Channel MOSFETs RCQ5409 60 VGS=-4.3V VGS=-4.5V -ID , Continuous Drain Current (A) -ID , Continuous Drain Current (A) 50 40 30 VGS=-3.7V 20 VGS=-3.3V VGS=-3V 10 0 0 0.6 1.2 1.8 2.4 50 40 30 20 10 0 3 25 50 -VDS ,Drain to Source Voltage (V) Fig.1 Fig.2 Typical Output Characteristics Normalized Gate Threshold Voltage Normalized On Resistance 2.5 2 1.5 1 0.5 0 100 125 150 Continuous Drain Current vs. TC 1.4 1.2 1 0.8 0.6 0.4 -50 0 50 100 150 -50 Fig.3 Normalized RDSON vs. TJ Fig.4 RDS(ON) , Turn-On Resistance (mohm) 20 18 16 ID=-15A 14 ID=-8A 12 Tc=25℃ 10 0 2 4 6 8 50 100 150 10 Normalized Vth vs. TJ 25 21 VGS=-4.5V 17 VGS=-6V 13 VGS=-10V 9 Tc=25℃ 5 5 12 19 26 33 40 -ID , Drain Current (A) -VGS , Gate to Source Voltage (V) Fig.5 0 TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) RDS(ON) , Turn-On Resistance (mohm) 75 TC , Case Temperature (℃) Turn-On Resistance vs. VGS Fig.6 3 Turn-On Resistance vs. ID www.realchip.net 40V P-Channel MOSFETs RCQ5409 Ciss 1000 Capacitance (pF) Coss 100 Crss 10 1 ID=-30A VDS=-20V 8 (mohm) -VGS , Gate to Source Voltage (V) 10 6 4 2 0 0.1 1 0 10 9 -VDS , Drain to Source Voltage (V) Fig.7 Fig.8 -ID , Continuous Drain Current (A) Normalized Thermal Response 1 0.5 0.2 0.1 0.05 0.02 0.01 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 0.1 36 45 1 Gate Charge Characteristics 10us 100 100us 1ms 10 10ms 100ms DC 1 0.1 TC=25℃ 0.01 0.1 1 10 100 -VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Fig.9 27 Qg , Gate Charge (nC) Capacitance Characteristics 0.1 18 Fig.10 Normalized Transient Impedance VDS Maximum Safe Operation Area -V GS 90% Qg -10V / -4.5V Qgs Qgd 10% VGS Td(on) Tr Ton Fig.11 Td(off) Tf Gate Charge Toff Switching Time Waveform Fig.12 4 Gate Charge Waveform www.realchip.net 40V P-Channel MOSFETs RCQ5409 PDFN5x6-8 PACKAGE INFORMATION Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 K --- 1.100 --- 0.043 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° 5 www.realchip.net