AO4419(UMW)

UMW R AO4419 30V P-Channel MOSFET D General Description The AO4419 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. G S Product Summary VDS ID (at VGS=-10V) -30V -9.7A RDS(ON) (at VGS=-10V) < 20mΩ RDS(ON) (at VGS = -4.5V) < 35mΩ 1 2 3 4 S S S G D D D D 8 7 6 5 SOP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V -9.7 ID TA=70°C Maximum -30 A -7.8 IDM -70 Avalanche Current C IAS, IAR -27 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 36 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead www.umw-ic.com 3.1 PD TA=70°C TJ, TSTG Steady-State Steady-State °C -55 to 150 Typ 31 59 16 Symbol t ≤ 10s W 2 RθJA RθJL 1 Max 40 75 24 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AO4419 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -30 Typ Max Units V VDS=-30V, VGS=0V -1 TJ=55°C -5 VDS=0V, VGS= ±20V µA ±100 nA -2.5 V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -70 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current -4 A ISM Pulsed Body-Diode CurrentC -70 A VGS=-10V, ID=-9.7A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 16.5 20 mΩ VGS=-4.5V, ID=-7A 26 35 mΩ VDS=-5V, ID=-9.7A 27 -1 V -0.75 DYNAMIC PARAMETERS Ciss Input Capacitance Coss -2.0 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 2 S 1040 pF 180 pF 125 pF 4 6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 19 nC Qg(4.5V) Total Gate Charge 9.6 nC VGS=-10V, VDS=-15V, ID=-9.7A Qgs Gate Source Charge 3.6 nC Qgd Gate Drain Charge 4.6 nC tD(on) Turn-On DelayTime 10 ns tr Turn-On Rise Time 5.5 ns tD(off) Turn-Off DelayTime 26 ns tf Turn-Off Fall Time 9 ns 11.5 ns nC VGS=-10V, VDS=-15V, RL=1.5Ω, RGEN=3Ω IF=-9.7A, dI/dt=500A/µs trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-9.7A, dI/dt=500A/µs 25 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using