IRLML6346TR(UMW)

UMW R IRLML6346 N-Channel MOSFET Features SOT–23 VDS (V) = 30V RDS(ON) 63m (VGS = 4.5V) RDS(ON) 80m (VGS = 2.5V) Application(s) Load/ System Switch 1. GATE Benefits 2. SOURCE Multi-vendor compatibility 3. DRAIN Environmentally friendly Increased Reliability *   ' 6  Absolute Maximum Ratings Symbol VDS Parameter Max. Units 30 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 3.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.7 IDM Pulsed Drain Current 17 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 A W Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 12 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter e RJA Junction-to-Ambient RJA Junction-to-Ambient (t